• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.21-27
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• 1998

Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.

• Journal of the Mineralogical Society of Korea
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• v.23 no.4
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• pp.403-411
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• 2010

Essentials of understanding the geochemical evolution and geophysical processes in Earth's system are macroscopic properties and atomistic (and electronic) structures of Earth materials. Recent advances in quantum calculations based on the density functional theory allow us to unveil the previously unknown details of local atomic structures in diverse silicates in Earth's interior. Here, we report the O K-edge ELNES (energy-loss near-edge structure; ELNES) spectra and PLDOS (partial local density of states) for oxygen atoms in ${\alpha}$-quartz and stishovite using the quantum calculations based on FP-LAPW (full potential linearized augmented plane wave). The calculated O K-edge ELNES spectrum of ${\alpha}$-quartz shows a strong peak at ~538 eV due to comer-sharing oxygen linking two $SiO_4$ tetrahedra and that for stishovite shows two distinct peaks at ~537 and ~543 eV corresponding to edge-sharing oxygen linking $SiO_6$ octahedra. The significant differences in spectral features of O K-edge ELNES spectra suggest that the O K-edge features can be useful indicator to distinguish various oxygen sites in diverse crystal and amorphous silicates in the Earth's interior.

• Progress in Medical Physics
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• v.16 no.4
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• pp.202-206
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• 2005

Three-dimensional thermoluminescence (TL) spectra from $MgAl_2O_4$ irradiated with UV light were measured over 300${\~}$600 K and 300${\~}$800 nm. The peak positions of TL glow curves were shifted to lower temperature with increasing the exposure time of UV light. The 476 K TL glow curve is due to the second kinetics and its activation energy and escape frequency factor are calculated to be 0.85 eV and $1.92{\times}10^6 sec^{-1}$, respectively The TL spectra were split into 530 nm and 700 nm emission bands which were associated with $V^{2+}$ and $Cr^{2+}$, respectively. The linearity range of 700 nm omission band is smaller than that of 530 nm emission band, but the saturation time of 700 nm emission band is longer than that of 530 nm omission band.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.141-146
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• 1999

We measured and analyzed thermoluminescence spectra of $LaAlO_3$, single crystal by 3 dimensional data for temperature, wavelength and luminescence intensity. $LaAlO_3$, has used as the substrates of YBCO(superconductor) or semiconductors. We could determined the energy of recombination center, that is impossible through analysis of glow curve data. We could obtained the energy through analysis of the spectrum data at peak temperature by Franck-Condon model. The total glow curve was deconvoluted to three glow curves by curve fitting method. The activation energies were 0.54eV, 0.91eV and 1.02eV respectively. The energies of recombination centers were determined with 2.04eV and 2.75eV from the analysis of luminescence intensity data for wavelength.

• Journal of the Korean Chemical Society
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• v.51 no.3
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• pp.265-269
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• 2007

A comparative study on crystal structures and UV-visible diffuse reflectance spectra for Nb-containing oxyfluorides was performed to probe the relationship between energy band gap and local structure. The oxyfluorides, RbSrNb2O6F, RbCaNb2O6F and RbNb2O5F are commonly composed of the corner-sharing NbO5F octahedra as structural building units. The average Nb-O(F)-Nb bond angles, which can be a measure of the structural distortion, are 158.6° for RbSrNb2O6F, 149.6° for RbCaNb2O6F and 139.5° for RbNb2O5F. As the bond angle decreases, the band gap increases: 3.48eV for RbSrNb2O6F, 3.75eV for RbCaNb2O6F and 4.03 eV for RbNb2O5F. This experimental result implies that the band gap can be controlled with a range of 0.6 eV through a variation of local structure for the Nb-containing oxyfluorides.

• Progress in Medical Physics
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• v.12 no.1
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• pp.1-8
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• 2001

Diamond thin films were synthesized by a chemical vapor deposition (CVD). Raman spectrum showed the diamond line at 1332 $cm^{-1}$ / and x-ray diffraction pattern exhibited a strong (111) peak of diamond. The scanning electron microscopy analysis showed that the CVD diamond thin film was grown to be unepitaxial crystallites with pyramidal hillocks. A wavelength-resolved thermoluminescence (TL) of the CVD diamond thin film irradiated with X-rays showed one peak at 430 nm around 560 K. The glow curve of the CVD diamond thin film produced one dominant 560-K peak that was caused by first-order kinetics. Its activation energy and the escape frequency were calculated to be 0.92 ～ 1.05 eV and 1.34 $\times$ 10$^{7}$ sec$^{-1}$ , respectively. The emission spectrum at 560 K was split into 1.63-eV, 2.60-eV, and 3.07-eV emission bands which is known to be attribute to silicon-vacancy center, A center, and H3 center, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.97-103
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• 1999

Zinc sulfide is a ll-VI compound with a large direct band gap in the near-UV region and a promising material for blur-light emitting diode and laser diode. It was identified that the structure had zinc blonde structure through the analysis of X-ray diffraction patterns. It's lattice constant was measured to be $a_o=5.411{\AA}$. The optical absorption, photocurrent, and photoluminescence spectra were measured to investigate the optical properties of zinc sulfide single crystal. The optical energy band gap measured at room temperature was 3.61eV The energy band gap of zinc sulfide annealed in zinc vapor at $800^{\circ}C$ was lower 0.1eV than that of as-grown zinc sulfide through the analysis of the photocurrent spectra. The photoluminescence spectra were measured ranging from 30K to 293K for the two cases of as-grown and annealed zinc sulfide. As-grown ZnS single crystal had peaks at 350nm, 392nm, 465nm, and annealed zinc sulfide had peaks at 349nm.

• Electrical & Electronic Materials
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• v.5 no.3
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• pp.284-294
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• 1992

합성용질확산법으로 GaP단결정을 성장시키고 몇가지 성질을 조사하였다. 정지상태에서 결정의 성장속도는 1.75[mm/day]이었고 결정성장용 석영관을 전기로내에서 하강시키므로써 양질의 GaP 단결정을 성장하였다. 에치피트밀도는 결정의 성장축 방향으로 3.8*$10^{4}$[$cm^{-2}$]부터 2.3*$10^{5}$[$cm^{-2}$] 까지 증가하였다. 성장된 GaP결정의 이동도와 캐리어농도는 실온에서 197.49[$cm^{2}$/V.sec]와 6.75*$10^{15}$[$cm^{-3}$]이었고 77K의 온도에서는 266.91[$cm^{2}$ /V.sec]와 3.13*$10^{14}$[$cm^{-3}$]이었다. 에너지갭의 온도의존성은 실험적으로 $E_{g}$(T)=2.3383-(6.082*$10^{-4}$) $T^{2}$/(373.096+T)[eV]로 구하여졌다. 저온에서 측정된 광루미네센스 스펙트럼은 구속된 여기자의 복사재결합과 재결합 과정에 포논의 참여로 인하여 에너지갭 부근의 복잡한 선 스펙트럼이 나타났고 얕은 준위의 Si도너와 Zn억셉터준위 사이에서의 복사재결합 및 이에 대한 1LO, 2LO의 포논복제가 나타났으며 S $i_{Ga}$ -S $i_{p}$의 쌍방출에 의하여 1.8932[eV]에서 넓은 반치전폭의 피크가 나타났다. GaP의 적외선 흡수는 TO, LO, LA, T $A_{1}$, T $A_{2}$ 포논들의 이중결합모드와 G $a_{2}$O의 진동모드 및 Si도너와 Zn억셉터들에 의하여 일어났다. Zn를 확산시키어 제작한 p-n GaP발광다이오드는 실온에서의 발광중심피크가 6250[.angs.]이었고 최대광출력은 0.0916[mW], 양자효율은 0.51%이었다.이었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.