• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of Hydrogen and New Energy
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• v.34 no.5
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• pp.413-420
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• 2023

Holmium-doped TiO₂ nanotubes (Ho-TNTs) were manufactured through anodization treatment and electrochemical deposition, and optimization experiments were conducted using various Holmium doping concentrations and time as variables. Surface as well as electrochemical characteristics were analyzed to study the prepared photocatalysts. Ho-TNTs were found to exist only in anatase phase through X-ray diffraction analysis. Ho-TNTs with 0.01 wt% 100 seconds shows a photocurrent density of 3.788 mA/cm² and an effective photo-conversion efficiency (PCE) of 4.30%, which is more efficient than pure TiO₂ nanotubes (pure-TNTs) (at bias potential 1.5 V vs. Hg/HgO). The photocatalytic activity of the aforementioned Ho-TNTs for hydrogen production was evaluated with the result of -29.20 µmol/h·cm².

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1535-1540
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• 2018

In this study, we prepared and characterized Nb-doped $Li_7La_3Zr_{2-x}O_{12}$ (LLZNO) powder and pellets with a cubic garnet structure by using a modified sol-gel synthesis and hot pressing. LLZNO powder with a very small grain size and cubic structure without secondary phases could be obtained by using a synthesis method in which Li and La sources in a propanol solvent were mixed together with Zr and Nb sources in 2-methoxy ethanol. A pure cubic phase LLZNO pellet could be fabricated from the prepared LLZNO and an additional 6-wt% of $Li_2CO_3$ powder by hot pressing at $1050^{\circ}C$ and 15.8 MPa. The hot-pressed LLZNO pellet with a relative density of 99% exhibited a very dense surface morphology. The total Li ionic conductivity of the hot-pressed LLZNO was $7.4{\times}10^{-4}S/cm$ at room temperature, which is very high level compared to other reported values. The activation energy for ionic conduction was estimated to be 0.40 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.110-115
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• 2019

$Pb(Sb_{0.5}Nb_{0.5})_x(Zr_{0.51}Ti_{0.49})_{1-x}O_3$ (abbreviation: PSN-PZT) ceramics were synthesized, using conventional bulk ceramic processing technology, with various PSN doping contents. The maximum density of PSN-PZT was 97% of the theoretical density in the samples sintered at $1,250^{\circ}C$. The maximum values of the piezoelectric properties achieved using the conventional processes were: $k_p$ of 0.625, $d_{33}$ of 531 pC/N, and $g_{33}$ of $33mV{\cdot}m/N$. Finally, we fabricated a piezo-speaker with the optimized PSN-PZT ceramics. The SPL of the speaker was measured at a distance of 1 m, with a driving voltage of $40V_{rms}$ in the frequency range of ~300 Hz to 9 kHz. The measured $SPL_{max}$ was at a very high level (95 dB), which was superior in quality in comparison with those of other commercial products.

• Journal of Korean Society of Environmental Engineers
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• v.33 no.12
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• pp.907-912
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• 2011

Development of visible light responsive photocatalysts is a promising research area to facilitate utilization of solar energy for hydrogen production via photocatalytic water splitting. In this study two groups of samples, nitrogen (N)-doped niobium pentoxide ($Nb_2O_5$) and titanium dioxide ($TiO_2$) ($Nb_2O_5-N$, $HNb_3O_8-N$, $TiO_2-N$) and N-undoped ones ($Nb_2O_5$ and $TiO_2$) were tested. In order to utilize visible light, nitrogen atoms were doped in selected photocatalysts by using urea. A shift of the absorption edges of the Ndoped samples in the visible light region was observed. Under visible light irradiation, N-doped samples were more prominent photocatalytic activities than the N-undoped samples. Specifically, 99.7% of rhodamine B (RhB) was degraded after 60 minutes of visible light irradiation with $TiO_2-N$. Since $TiO_2-N$ shows the highest activity of RhB degradation, it was supposed to generate the highest current response. However, $HNb_3O_8-N$ showed the highest current response ($63.7mA/cm^2$) than $TiO_2-N$. More interestingly, when we compare the hydrogen production, $Nb_2O_5-N$ produced $19.4{\mu}mol/h$ of hydrogen.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.611-615
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• 2013

Vanadium oxide ($VO_2$) and tungsten-doped vanadium oxide (W-$VO_2$) powder, well known as thermochromic materials, were prepared from vanadium pentoxide ($V_2O_5$) and oxalic acid dihydrate by hydrothermal and calcination process. The crystal structure and thermochromic property of samples were analyzed using FE-SEM, XRD, XPS, DSC, and UV-Vis-NIR spectroscopy. With increasing the doping amount of W, the phase transition temperature of W-$VO_2$ sample decreased from $70^{\circ}C$ to $42^{\circ}C$. When heating W-$VO_2$ sample above the phase transition temperature, the UV-Vis-NIR spectrum was not changed in the visible range and shifted towards a low transparency in the full name (NIR) region.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.278-282
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• 2010

The doping effect of thulium on electrical properties and degradation behavior in barium titanate ceramics ($BaTiO_3$) was investigated in terms of generations of core-shell structure and micro-chemical changes through highly accelerated degradation test. The dielectric specimens of pellet type and multi-layered sheets were prepared by using $BaTiO_3$ with undoped and doped with 1 mol% $Tm_2O_3$. The $BaTiO_3$ ceramics doped with 1 mol% $Tm_2O_3$ had 40% higher dielectric constant (${\varepsilon}$ = 2700) than that of the undoped $BaTiO_3$ specimen at curie temperature and met X7R specification. According to the result of highly accelerated degradation test conducted at $150^{\circ}C$, 70 V, and 24 hr, the oxygen diffusion was declined in dielectrics doped with 1 mol% $Tm_2O_3$. The $Tm^{3+}$ ion substituted selectively Ba site and Ti site and contributed to the generation of the core-shell structure. Oxygen vacancies occurred by substitution for Ti site could reduce excess oxygen that reacted to the Ni electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.387-387
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• 2012

결정 Si 및 비정질 Si 태양전지는 환경친화적이며 안정적인 물질로 전력변환 및 에너지 저장 장치에 중요하기 때문에 연구가 활발하게 진행되고 있다. 고효율 Si 태양전지를 제작하여 상용화하기에는 여러 가지 문제점이 있다. 공기와 비교하여 높은 굴절률을 갖고 있기 때문에 발생하는 반사를 줄이기 위해서 필요한 무반사 코팅층(Anti-reflective coating; ARC)은 주로 SiO2 와 SiNx 와 같은 유전체를 이용하여 사용하지만 이들 ARC 증착은 PECVD와 같은 진공장비를 사용하므로 제작 비용이 높아지는 단점이 있다. 나노선 또는 나노 팁과 같은 sub-wavelength 구조를 표면에 만들어 반사율을 줄이는 작업을 통해 ARC 공정비용을 감소하고 효율을 증진하는 연구가 활발히 진행되고 있다. CdS 양자점을 태양전지 표면에 형성함으로 ARC로 해결할 수 없는 단파장영역에 해당하는 부분을 줄이는 연구가 진행되었으며, 비정질의 경우 원기둥 형태의 태양전지 형태와 더불어 지름 방향으로의 PN 접합 나노로드 배열을 만들어 흡수면을 증가하여 효율을 증가한 연구도 진행되었다. 태양전지 표면의 형태를 V-groove 형태로 형성하여 입사하는 태양전지의 광밀도를 증가하는 이론적 결과도 발표되었다. 본 연구에서는 Si 태양전지의 표면변형에 따른 태양전지의 전력변환효율의 변화를 관찰하기 위하여 태양전지 표면의 texture 지름을 $3{\sim}15{\mu}m$, 간격을 $5{\sim}20{\mu}m$로 변화하고, 태양전지 표면의 나노 패턴을 2~10 nm 로 변화하여 반사율과 전력변환효율을 비교하였다. 나노와 마이크로 패턴은 각각 polystyrene nanosphere 와 photo mask를 이용하여 제작하였으며 PN junction Si 태양전지는 spin on dopant 방식으로 제작하여 성능을 조사하였다.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.150-154
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• 2016

Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to $400^{\circ}C$) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of $350^{\circ}C$ showed the best electrical characteristics in terms of the carrier concentration ($4.24{\times}10^{20}cm^{-3}$), charge carrier mobility ($5.01cm^2V^{-1}S^{-1}$), and a minimum resistivity ($1.24{\times}10^{-4}{\Omega}{\cdot}cm$). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to $350^{\circ}C$. However, Band gap energy of MIZO thin film was narrow at substrate temperature of $400^{\circ}C$.