• Korean Journal of Materials Research
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• v.16 no.3
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• pp.178-182
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• 2006

A single electro-discharge-sintering (EDS) pulse (1.0 kJ/0.7 g), from a $300{\mu}F$ capacitor, was applied to atomized spherical Ti-6Al-4V powder in a low vacuum to produce porous-surfaced implant compacts. A solid core surrounded by a porous layer was formed by a discharge in the middle of the compact. XPS (X-ray photoelectron spectroscopy) was used to study the surface characteristics of the implant material. C, O, and Ti were the main constituents, with smaller amounts of Al, V, and N. The implant surface was lightly oxidized and was primarily in the form of $TiO_2$ with a small amount of metallic Ti. A lightly etched EDS implant sample showed the surface form of metallic Ti, indicating that EDS breaks down the oxide film of the as-received Ti-6Al-4V powder during the discharge process. The EDS Ti-6Al-4V implant surface also contained small amounts of aluminum oxide in addition to $TiO_2$. However, V detected in the EDS Ti-6Al-4V implant surface, did not contribute to the formation of the oxide film..

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.364-371
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• 1998

A novel antifuse has been developed for field programmable gate arrays (FPGA's) as a voltage programmable link with Al/$BaTiO_3/SiO_2$/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of $BaTiO_3$ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$, the program voltage was about l4.4V and on-resistances were ranged between 40 and $50{\Omega}$. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/$BaTiO_3$ and TiW-silicide/$SiO_2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.10
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• pp.4672-4678
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• 2013

Aluminum dross is formation at the surface of the molten metal as the latter reacts with the furnace atmosphere and it was an unavoidable by-product of the aluminum production process. However aluminum dross was usually landfilled or disposed without treatment, causing much environmental damage. The purpose of this study is to investigate the possibility of ceramic catalyst support using recycled Al dross. The recycled Al dross was made into SCR catalyst by mixing with $WO_3$, $V_2O_5$ and $TiO_2$. The $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR catalyst was observed with XRF, XRD and BET. $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR strength was measured by Universal Testing Machine(UTM). As the added $Al_2O_3$, streagth is increased. And the NOx removal activity was observed by MR(Micro-Reactor). The temperatures ranging from $350^{\circ}C$ and $400^{\circ}C$, $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR catalyst De-NOx performance result of showed excellent activity over 90% at application condition.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1031-1033
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• 1995

The microwave dielectric properties of (1-x)$LaAlO_3-xCaTiO_3$ system were investigated. As the amount of $LaAlO_3$ increased, the value of the unloaded Q increased, but the dielectric constant(${\varepsilon}_r$) decreased. The temperature coefficient of resonant frequency(${\tau}_f$) of $5ppm/^{\circ}C$ was obtained from the composition of $0.35LaAlO_3-0.65CaTiO_3$ in which the values of ${\varepsilon}_r$ and $Q{\cdot}f_o$ were 42 and 32,500, respectively.

• Journal of Technologic Dentistry
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• v.30 no.1
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• pp.25-31
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• 2008

Cp-Ti and Ti-6Al-4V alloys commonly used dental implant materials, particularly for orthopaedic and osteosynthesis because of its suitable mechanical properties and excellent biocompatibility. This alloys have excellent corrosion behavior in the clinical environment. The first factor to decide the success of dental implantation is sufficient osseointegration and high corrosion resistance between on implant fixture and its surrounding bone tissue. In this study, in order to increase corrosion resistance and biocompatibility of Cp-Ti and Ti-6Al-4V alloy that surface of manufactured alloy was coated with TiN by RF-magnetron sputtering method. The electrochemical behavior of TiN coated Cp-Ti and Ti-6Al-4V alloy were investigated using potentiodynamic (EG&G Co, PARSTAT 2273. USA) and potentiostatic test (250mV) in 0.9% NaCl solution at 36.5 $\pm$ 1$^{\circ}C$. These results are as follows : 1. From the microstructure analysis, Cp-Ti showed the acicular structure of $\alpha$-phase and Ti-6Al-4V showed the micro-acicular structure of ${\alpha}+{\beta}$ phase. 2. From the potentiodynamic test, Ecorr value of Cp-Ti and Ti-6Al-4V alloys showed -702.48mV and -319.87mV, respectively. Ti-6Al-4V alloy value was higher than Cp-Ti alloy. 3. From the analysis of TiN and coated layer, TIN coated surface showed columnar structure with 800 nm thickness. 4. The corrosion resistance of TiN coated Cp-Ti and Ti-6Al-4V alloys were higher than those of the non-coated Ti alloys in 0.9% NaCl solution from potentiodynamic test, indicating better protective effect. 5. The passivation current density of TiN coated Cp-Ti and Ti-6Al-4V alloys were smaller than that of the noncoated implant fixture in 0.9% NaCl solution, indicating the good protective effect resulting from more compact and homogeneous layer formation.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.457-461
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• 2004

The thermomechanically treated $Ti-45.4\%Al-4.8\%Nb(at\%)$ alloy was oxidized between 800 and $1000^{\circ}C$ in air, and the oxidation characteristics were studied. The dissolution of Nb in the oxide scale was observed from the TEM study. The Pt marker test revealed that the oxidation process was controlled by the outward diffusion of Ti ions and the inward diffusion of oxygen ions. During oxidation, the evaporation of Nb-oxides was found to occur to a small amount. Niobium tended to pile-up at the lower part of the oxide scale, which consisted primarily of an outer $TiO_2$ layer, and an intermediate $Al_{2}O_{3}-rich$ layer, and an inner mixed layer of ($TiO_{2}+Al_{2}O_{3}$).

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.32-36
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• 2000

Pyrolytic preparations of Ti-Al-N ceramics from three blended precursors were investigated. The precursors were prepared stirring ($HA1N^{i}Pr_m$ and an aminolysis product of $Ti(NMe_2)_4$ with $MeHNCH_2CH_2$NHMe in $C_6/H_6$ . IR and $^1H\;NMR $analyses suggested that essentially no Ti-N-Al bonds were present in the precursors. Pyrolysis of the precursors under $NH_3-N_2$led to the formation of brown solids with ceramic yields of about 30%, and the Ti-Al ratios in the pyrolyzed products were close to those of the precursors. XRD analysis of the pyrolyzed product from the precursor with Ti:Al=5:1 indicated the formation of a NaCl-type compound as the only crystalline phase. Pyrolysis of the precursor with Ti:Al=2:1 led to the formation of AlN besides the major NaCl-type compound. A ceramic composite containing AlN and the NaCl-type compound was formed by pyrolysis of the precursor with Ti:Al=1:2.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.245-251
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• 2004

This paper is studied on the effect of TiAlN coated Ball End Mill and MQL(Minimum Quantity Lubrication) cutting condition on cutting characteristic of high hardness steels. KP4 steels[HRC32] and STD11[HRC60] heat treated steels were used as the workpiece and WC-Co ball end mill and single and multi layer TiAlN coated ball end mill were utilized in the cutting tests. MQL device was used to spray botanical oil coolant. Result showed that TiAlN coated ball end mill were increased the cutting length than WC-Co ball end mill in the cutting speed[$245{\sim}320m/min$] about $2.3{\sim}5.7$ times for KP4 steels and about $2.5{\sim}4.3$ times far STD11 heat treated steels. The multi layer TiAlN coated ball end mill is good for KP4 steels than single layer coated.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.635-640
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• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.