• 한국안광학회지
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• 제3권1호
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• pp.223-228
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• 1998

$SiO_2-TiO_2-M_xO_y$ (M = Co, Cr or Cu)계의 비정질 박막을 현미경용 슬라이드 유리판 위에 전구체 용액을 스핀코팅방법으로 제조하였다. 전구체 용액은 tetraethyl orthosilicate, titanium trichloride, 그리고 코발트질산염, 크롬질산염, 구리질산염을 사용하여 합성하였다. X-선 회절분석 (${\theta}-2{\theta}$ scan)을 통하여 박막내에 $Co_3O_4$, $Cr_2O_3$, CuO 결정의 석출이 없는 비정질 박막임을 확인하였다. 코발트는 4면체배위의 $ Co^{2+}$로, 크롬은 4면체정배위의 $Cr^{6+}$로, 구리는 8면체배위의 $Cu^{2+}$로 존재하였다. 이 비정질박막의 표면에서 crack과 texture는 발견할 수 없었으며 파단면에서 박막악과 유리판 간의 계면은 균일한 조직을 보였다.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.545-550
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• 2000

In order to synthesize Ba-ferrite particles by molten salt method KCl and NaCl were added to basic composition to 50% by weight. X was varied from 0.0 to 1.0 to control the magnetic properties in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ and 1 mol% of $SiO_2$was added to control the aspect ratio of hexagonal platelets. And the effects of reaction temperatures were examined by varying the temperature from 85$0^{\circ}C$ to 120$0^{\circ}C$ with 5$0^{\circ}C$ intervals. Eutectic composition of NaCl and KCl lowered the crystallizing temperature of Ba-ferrite in molten salts than using KCl and NaCl separatly. The morphology of resulting Ba-ferrite particles was clearly hexagonal-shaped plates. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substitued with $Co^{2+}$ and $Ti^{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ . Adding 1mol% $SiO_2$in molten salt method increased the size but shortened c-axis of the hexagonal ferrites and this result is an opposite phenomenon compared with the result in solid-statge reaction.n.ion.n.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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• pp.31-34
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• 1999

In the present study, we fabricated stoichiometric $(Ba_{1-x}Sr_x)TiO_3$ thin films at various substrate temperature and contents using of magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/$SiO_2$/Si). The substate temperature deposited at 200[ $^{\circ}C$], 400[$^{\circ}C$] and 600[$^{\circ}C$] and crystalline BST thin films show above 400[$^{\circ}C$]. Also, the composition of $(Ba_{1-x}Sr_x)TiO_3$ thin films deposited on Si wafer substrate at 400[$^{\circ}C$] were closed to stoichiometry($1.015{\sim}1.093$ in A/B ratio), but compositional deviation from a stoichiometry is larger as $SrCO_3$ is added. The drastic decrease of dielectric constant and increase of dielectric loss in $(Ba_{1-x}Sr_x)TiO_3$thin films is observed above 100[kHz]. V-I characteristics of $(Ba_{1-x}Sr_x)TiO_3$ thin films show the decrease of leakage current with the increase of $SrCO_3$ contents.

• 한국세라믹학회지
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• 제20권1호
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• pp.43-48
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• 1983

The formation of strontium titanate from several molar $SrCO_3$ and $TiO_2$ mixtures was studied in air and $CO_2$ gas Mixtures of $SrCO_3$ and $TiO_2$ were heated in air at 400-$600^{\circ}C$ DTA-TG was used to obtain thermal histories of simples heated in air and $CO_2$ gas. X-ray diffraction analysis was used to determine both the phase composition and the amounts of each phase present. The phase relationship of various compounds $SrTiO_3$, $Sr_2TiO_4$, $Sr_2Ti_3O_7$ and $Sr_4Ti_3O_{10}$ formed by the sintering in each composition was shown by the calibration curves. High temperature X-ray analysis was used to determine both the formation process and deformation process of each products. Small amount of SrTiO3 is formed first at the surface af contact SrTiO3 reacts with $SrCO_3$ to form Sr2TiO4 this is affected on the $CO_2$ pressure.

• 한국세라믹학회지
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• 제35권8호
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• pp.864-870
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• 1998

The effect of {{{{ {{Nb }_{2 }O }_{5 } }} and CoO addition on the temperature dependence of the {{{{ {BaTiO }_{3 } }}-based ceramic capa-citor has been studied. X7R with moderate temperature dependence has been developed by means of pre-cisely controlled {{{{ {{Nb }_{2 }O }_{5 } }}/CoO ratio. Dielectric constant(K) and dissipation factor(DF) were 3500 and 1.5% respectively. As the content of {{{{ {{Nb }_{2 }O }_{5 } }} was increased the curie temperature(Tc) was shifted to lower tem-perature and the dielectric constant at Tc was decreased. The proper addition of CoO with {{{{ {{Nb }_{2 }O }_{5 } }} improved the temperature dependence of dielectric properties of the {{{{ {BaTiO }_{3 } }}-based ceramic capacitor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.326-329
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• 1996

In order to synthesize Ba-ferrite fine particles by molten salt method and inhibit the abnormal grain growth of sintered specimen, KCI anti NaCl were added to basic composition to 50% by weight, and added 1 male% of $SiO_2$ to control the shape of Ba-ferrite particles. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substituted with $Co_{2+}$ and $Ti_{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$ $Ti_{x}$ $Co_{x}$ $O_{19}$ , and 1 mole% $SiO_2$ increased the size but shortened c-axis of hexagonal ferrite. Seeds added in Ba-ferrite particle effected inhibition of abnormal grain growth during sintering.ing.g.

• 한국세라믹학회지
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• 제30권12호
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• pp.1023-1028
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• 1993

To obtain a single phase of Ba2Ti9O20 at lower temperature than previious other researches. We investigated the effect of Zr substitution for predetermined portions of Ti in Ba2Ti9O20. In this study, the four compounds(x=0, 0.028, 0.048, 0.068) of Ba2(Ti1-xZrx)9O20 were prepared by coprecipitation reaction of BaCl2, TiCl4 and ZrOCl2 with (NH4)2CO3 and NH4OH as the coprecipitating agents and pH regulators, in queous solution. Owing to 4.8 mol% addition, the single phase of Ba2Ti9O20 showing high Q was obtained at 115$0^{\circ}C$ which is lower by 25$0^{\circ}C$ than the temperature in case of mechanical mixtures of BaCO3 and TiO2.

• 한국세라믹학회지
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• 제40권1호
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• pp.62-68
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• 2003

졸-겔법으로 보자력 제어에 뛰어난 첨가제인 Co와 Ti을 첨가한 Ba-ferrite 미립자를 합성하였다. 졸-겔 반응시, 반응 시간이 90분에서 120분 이내에서 온도, pH 및 점도의 변화가 없고, aging 시간에 따라 점도가 안정한 상태치 졸을 얻을 수 있었다. 이 졸을 건조 및 열처리 후, Differential Thermal Analysis(DTA)와 X-Ray Diffractometer(XRD)를 통해 Ba-ferrite 상이 약 $700^{\circ}C$부터 생성됨을 확인하였으며, 열처리 온도 증가에 의해 결정성이 좋아짐을 볼 수 있었다. Scanning Election Microscopy(SEM)로 표면형상을 관찰한 결과 열처리 온도가 증가함에 따라 입자크기가 증가하였으며, 비교적 균질한 입도 분포의 미립자를 얻을 수 있었다. 또한, Vibrating Sample Magnetometer(VSM)로 Co와 Ti의 첨가량에 따른 자기적 특성을 관찰하였으며, 포화자화(M$_{s}$ )값은 첨가량에 관계없이 변화가 없었으나, 보자력(H$_{c}$)값은 첨가량에 따라 크게 변화하였다.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.949-955
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• 2010

Nd and Ti co-doped bismuth ferrite $(Bi_{1-x}Nd_x)(Fe_{1-y}Ti_y)O_3$ (x, y = 0, 0.05, 0.1, 0.2) ceramics and thin films were synthesized through the conventional mixed-oxide process and pulsed laser deposition (PLD), respectively. Nd and Ti co-doping effect was examined with emphasis on how these impurities affect phase formation behavior as there could be the improvement in leakage current problems often associated with multiferroic $BiFeO_3$ (BFO) thin films. The lattice constants of BFO ceramics decreased with Nd doping concentration up to 10mol%, while they further decreased with Nd and Ti co-doping to about 20%. BFO thin films obtained by the PLD process revealed random polycrystalline structure. Similar to bulk BFO ceramic, Nd and Ti co-doping effectively suppressed the formation of unwanted secondary phase and thus stabilized the perovskite phase in BFO thin films.

• Journal of Magnetics
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• 제4권2호
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• pp.65-68
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• 1999

The M-type barium ferrite ($BaFe_{12}O_{19}$) is well known magnetic material to be used as a permanent magnet due to its strong uniaxial anisotropy. The substitution of nonmagnetic $Ti^{+4}$ and magnetically weak $Co+^2ion for Fe^{+3}$ to its strong uniaxial anisotropy. The substitution of nonmagnetic $Ti^{+4}$ and magnetically weak $Co+^2ion for Fe^{+3}$ sublattices reduces the uniaxial anisotropy and those compounds open a new application field of noise suppressor at high frequencies. In this study, the magnetic and microwave absorbing properties are investigated in Ti-and Co-substituted barium ferrites ($BaFe_{12-2X} Ti_XCo_XO_{19}$). The saturated magnetization decreases linearly with the substitution of Ti and Co. The rapid drop in coercive force is observed with Ti and Co substitution upto x=1.2. The magnetic permeability spectrum shows the natural magnetic resonance in the specimens with small coercive force and large attenuation of microwave is predicted in those specimens at high frequencies (above 4 GHz).