Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Phase Evolution Behavior of (Bi,Nd)(Fe,Ti)O3 Ceramics and Thin Films

(Bi,Nd)(Fe,Ti)O3 세라믹스와 박막의 상형성 거동

  • Kim, Kyung-Man (School of Materials Science and Engineering, Yeungnam University) ;
  • Lee, Hee-Young (School of Materials Science and Engineering, Yeungnam University)
  • 김경만 (영남대학교 공과대학 신소재공학부) ;
  • 이희영 (영남대학교 공과대학 신소재공학부)
  • Received : 2010.10.18
  • Accepted : 2010.11.04
  • Published : 2010.12.01
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Abstract

Nd and Ti co-doped bismuth ferrite $(Bi_{1-x}Nd_x)(Fe_{1-y}Ti_y)O_3$ (x, y = 0, 0.05, 0.1, 0.2) ceramics and thin films were synthesized through the conventional mixed-oxide process and pulsed laser deposition (PLD), respectively. Nd and Ti co-doping effect was examined with emphasis on how these impurities affect phase formation behavior as there could be the improvement in leakage current problems often associated with multiferroic $BiFeO_3$ (BFO) thin films. The lattice constants of BFO ceramics decreased with Nd doping concentration up to 10mol%, while they further decreased with Nd and Ti co-doping to about 20%. BFO thin films obtained by the PLD process revealed random polycrystalline structure. Similar to bulk BFO ceramic, Nd and Ti co-doping effectively suppressed the formation of unwanted secondary phase and thus stabilized the perovskite phase in BFO thin films.

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References

  1. M. Fiebig, J. Phys. D, Appl. Phys., 38, R123–R152 (2005).
  2. K. Y. Yun, M. Noda, and M. Okuvama, Appl. Phys. Lett., 83, 19 (2003).
  3. G. L. Yuan, S. W. Or, W. P. Wang, Z. G. Liu, and J. M. Liu, Solid State Comm., 139, 76-81, (2006). https://doi.org/10.1016/j.ssc.2006.04.009
  4. F. Huang, X. Lu, W. Lin, X. Wu, Y. Kan, and J. Zhu, Appl. Phys. Lett., 89, 242914 (2006). https://doi.org/10.1063/1.2404942
  5. G. L Yuan, S. W. Or, and H. L. W. Chan, J. Appl. Phys., 101, 064101 (2007). https://doi.org/10.1063/1.2433709
  6. G. L Yuan, S. W. Or, and H. L. W. Chan, J. Appl. Phys., 101, 024106 (2007). https://doi.org/10.1063/1.2423228
  7. H. Uchida, R. Ueno, H. Funakubo, and S. Koda, J. Appl. Phys., 100, 014106 (2006). https://doi.org/10.1063/1.2210167
  8. S. Singh, and H. Ishiwara, Jpn. J. Appl., Phys. 45, 3194-3197 (2006). https://doi.org/10.1143/JJAP.45.3194
  9. Y. Wang, and C. W. Nan, Appl. Phys. Lett., 89, 052903 (2006). https://doi.org/10.1063/1.2222242
  10. H. Y. Go, N. Wakiya, H. Funakubo, K. Satoh, M. Kondo, J. Cross, K. Maruyama, N. Mizutani, and K. Shinozaki, Jpn. J. Appl. Phys., 46, 3491-3494 (2007). https://doi.org/10.1143/JJAP.46.3491
  11. . Y. Yun, D. Ricinschi, M. Noda, and M. Okuyama, J. Kor. Phys. Soc., 46, 281-284 (2005).