• Title/Summary/Keyword: $TiO_3$

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Self-cleaning Properties of TiO2-SiO2-In2O3 Nanocomposite Thin Film

  • Eshaghi, Akbar;Eshaghi, Ameneh
    • Bulletin of the Korean Chemical Society
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    • v.32 no.11
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    • pp.3991-3995
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    • 2011
  • $TiO_2-SiO_2-In_2O_3$ nanocomposite thin film was deposited on the glass substrates using a dip coating technique. The morphology, surface composition, surface hydroxyl groups, photocatalytic activity and hydrophilic properties of the thin film were investigated by AFM, XPS, methyl orange decoloring rate and water contact angle measurements. The hydroxyl content for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ nanocomposite films was calculated to be 11.6, 17.1 and 20.7%, respectively. $TiO_2-SiO_2-In_2O_3$ film turned superhydrophilic after 180-min irradiation with respect to pure $TiO_2$ and $TiO_2-SiO_2$ thin films. The photocatalytic decomposition of methyl orange for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ thin films was measured as 38.19, 58.71 and 68.02%, respectively. The results indicated that $SiO_2$ and $In_2O_3$ had a significant effect on the hydrophilic, photocatalytic and self-cleaning properties of $TiO_2$ thin film.

Effect of $({Zn}_{1/3}{Nb}_{2/3}){O}_{2}$ Addition on the phase changes and dielectric properties of ${BaTiO}_{3}-{3TiO}_{2}$ceramics ($({Zn}_{1/3}{Nb}_{2/3}){O}_{2}$의 첨가가 세라믹스의 상변화 및 유전특성에 미치는 영향)

  • 김상근;박찬식;변재동;김경용
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.44 no.8
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    • pp.1068-1074
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    • 1995
  • Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.

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Study on the Powder Synthesis of $BaTiO_3$ and its Dielectric Properties (초소형 캐패시터용 $BaTiO_3$분말합성 및 소결특성에 관한 연구)

  • 문흥수;박병규;이태근;김철긴;이석근
    • Korean Journal of Crystallography
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    • v.10 no.1
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    • pp.56-65
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    • 1999
  • 수열법을 이용하여 미세한 BaTiO3 분말을 합성하였다. Ti원으로 두 종류의 TiO2 gel을 사용하였으며 그 크기와 모양을 BaTiO3 합성에 주는 영향을 고찰하였다. 구형의 단분산 TiO2 gel을 사용하여 Ba(NO3)2 수용액에서 수열 합성한 BaTiO3 분말은 입자크기도 균일하였으며 응집이 일어나지 않아않았다. 비교적 낮은 pH에서 구형 TiO2 gel을 사용하여 합성한 BaTiO3 분말은 구형을 그대로 유지하였지만 높은 pH에서 합성한 BaTiO3 분말은 그 구형이 분해되었다. KOH양이 많아지고, 합성시간이 길어짐에 따라 합성된 BaTiO3 분말의 크기는 커졌으며 그 c/a 값도 증가하였다.

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Photocatalytic Decomposition of Gaseous Acetaldehyde by Metal Loaded $TiO_2$ with Ozonation

  • Cho, Ki-Chul;Yeo, Hyun-Gu
    • Journal of Korean Society for Atmospheric Environment
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    • v.22 no.E1
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    • pp.19-26
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    • 2006
  • The decomposition of gaseous $CH_3CHO$ was investigated by metal loaded $TiO_2$ (pure $TiO_2,\;Pt/TiO_2,\;Pd/TiO_2,\;Mn/TiO_2\;and\;Ag/TiO_2$) with $UV/TiO_2$ process and $UV/TiO_2/O_3$ process at room temperature and atmospheric pressure. Metal loaded $TiO_2$ was prepared by photodeposition. Decomposition of $CH_3CHO$ was carried out in a flow-type photochemical reaction system using three 10W black light lamps ($300{\sim}400nm$) as a light source. The experimental results showed that the degradation rate of $CH_3CHO$ was increased with Pt and Ag on $TiO_2$ compared to pure $TiO_2$, but decreased with depositing Pd and Mn on pure $TiO_2$. The considerable increase in the degradation efficiency of the $CH_3CHO$ was found by a combination of photocatalysis and ozonation as compared to only by ozonation or photocatalysis. Loading of Pt on $TiO_2$ promoted conversion of gaseous ozone. The degradation rate of gaseous $CH_3CHO$ decreased with an increase of water vapor in the feed stream for the both $UV/TiO_2\;and\;UV/TiO_2/O_3$ processes. The pure $TiO_2$ was more affected by the water vapor than Pt loaded $TiO_2$.

Microwave dielectric properties of $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$ ($B_2O_3$ 첨가에 따른 $0.96MgTiO_3-0.04SrTiO_3$의 마이크로파 유전특성)

  • Kim, Jung-Hun;Choi, Eui-Sun;Lee, Mun-Ki;Jung, Jang-Ho;Lee, Young-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.682-685
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    • 2002
  • The $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. According to the X-ray diffraction pattern of the $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase of the $MgTi_2O_5$ were appeared. In the case of $0.96MgTiO_3-0.04SrTiO_3+B_2O_3$(10wt%) ceramics sintered $1225^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 19.82, 62,735GHz, $-2.983ppm/^{\circ}C$, respectively.

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Microwave Dielectric Properties of $MgTiO_{3}$ Ceramics ($MgTiO_{3}$ 계 세라믹스의 고주파 유전특성)

  • Kim, Wang-Seop;Kim, Gyeong-Yong
    • Korean Journal of Materials Research
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    • v.5 no.2
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    • pp.246-250
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    • 1995
  • Microwave properties of $CaTiO_{3}$, MgO and CaO added $MgTiO_{3}$ ceramics are investigated. In the composition of $(Mg_{0.915}Ca_{0.085})TiO_3$, dielectric constant($varepsilon _T$) was 22, Qxf value was 50000, and temperature coefficient of resonant frequency($gamma_T$) approached to near zero $ppm/^{\circ}C$.$MgTiO_{3}$ ceramics with 0.1 mol of MgO showed the highest Qxf calue of 131000, dielectric constant of 17, and r, of -$50ppm/^{\circ}C$. Dielectric constant of 8 mol% CaO added to $MgTiO_{3}$-MgO was 20. Qxf valus was 52000, and sf was zero $ppm/^{\circ}C$. $MgTiO_{3}$-Mg0-Ca0 system showed higher Qxf value than ($Mg_{1-x}, Ca_x$) Ti03 system.

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Behaviors of Abnormal Expansion in $Ba_2Ti_9O_{20}$ Ceramics during Calcination Process ($Ba_2Ti_9O_{20}$ 요업체의 하소공정중 이상팽창 거동)

  • 성제홍;김정주;김남경;조상희
    • Journal of the Korean Ceramic Society
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    • v.36 no.12
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    • pp.1327-1334
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    • 1999
  • Behaviors of abnormal expansion during calcination process of Ba2Ti9O20 ceramics and its related effects on the sintering characteristics were investigated as a function of precursors. When BaCO3 and TiO2 powders were used as starting materials. BaTi4O9 phase which has relatively large molar volume was formed drastically with abnormal ex-pansion during the calcination at 95$0^{\circ}C$ to 115$0^{\circ}C$ ON the contrary using BaTiO3 and TiO2 powders as starting materials led to retardation of the formation of BaTi4O9 phase and concurrently suppressed the abnormal expansion during cal-cination process. Especially the calcined powder of BaTiO3 and TiO2 had advantages in the densification and formation of Ba2Ti9O20 single phase in the sintering process.

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Low Temperature Sintering Properties of Ti-Te System Ceramics for LTCC Application (LTCC응용을 위한 Ti-Te계 세라믹스의 저온소결 특성)

  • Kim, Jae-Sik;Ryu, Ki-Won;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1299-1300
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    • 2007
  • In this study, low temperature sintering property of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_{3}O_{8}$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_{3}O_{8}$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. The bulk densities and dielectric constants were decreased with increasing of $MgTiO_3$. However, the quality factors were increased with $MgTiO_3$ addition. Also, TCRF was shifted to negative(-) direction. Microwave dielectric properties of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics had similar tendency with calculated value by the mixing rule. The dielectric constant, quality factor and TCRF of $05TiTe_{3}O_{8}-0.5MgTiO_{3}$ ceramics sintered at $830^{\circ}C$ for 3h. were 26.19, 43,290GHz and $-3.9ppm/^{\circ}C$, respectively.

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Effects of $Y_2O_3$ Addition on the Microstructure and Electrical Property of $TiO_2$-excess $BaTiO_3$

  • Kim, Jong-Han;Han, Young-Ho
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1095-1096
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    • 2006
  • When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

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The Preparation and Dielectric Properties of (Ba Sr Mg)$TiO_3$Ceramic Capacitors (자기 캐패시터용 (Ba Sr Mg)$TiO_3$ 세라믹스의 제조 및 유전특성)

  • 김범진;박태곤
    • Electrical & Electronic Materials
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    • v.10 no.7
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    • pp.674-681
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    • 1997
  • Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

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