• Title/Summary/Keyword: $TiO_2-SnO_2$

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Effect of Size of Sintered Body on Resonant and Filter Characteristics in Pb(Sn1/2Sb1/2)O3-PbTiO3 Piezoelectric Ceramics (Pb(Sn1/2Sb1/2)O3-PbTiO3계 소결체의 직경변화가 공진 및 필터특성에 미치는 영향)

  • 임진호;조상희
    • Journal of the Korean Ceramic Society
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    • v.25 no.4
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    • pp.309-314
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    • 1988
  • In this study, the effect of the size of sintered body on resonant and filter characteristics in Pb(Sn1/2Sb1/2)O3-PbTiO3 piezo-electric system were investigated. The attenuation characteristics of ring-dot type and ladder type filter were also investigated. As the size of sintered body was decreased, the resonant characteristic(Fr, Fa) and the center frequency(Fo) were increased. As the poling field was increased, the Kp and bandwidth were increased. The big difference between rign-dot type and ladder type was the sharpness of bandwidth, selectivity and the movement of center frequency.

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Transition temperature shiftin barium titanate with $SnO_{2}$ (Stonnic Dioxide첨가에 따른 Barium Titanate의 전이온도의 이동)

  • 박창엽;박상만
    • 전기의세계
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    • v.26 no.1
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    • pp.82-86
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    • 1977
  • Semiconducting Barium Titanate shows resistivity anomaly near the transition temperature 120.deg. C. Its transition temperature decreases about 6-7.deg. C per 1 mole % SnO$_{2}$, which is likely to compose (BaSb) (TiSn) $O_{3}$ structure by making Sn$^{+4}$ ions occupy Ti$^{+4}$ ion sites. Grain boundories, whose existance is the cause of having high resistivity in Semiconducting BaTiO$_{3}$ disappear due to the spontaneous polarization below the transition temperature, and it is believed that the phase transition makes semiconducting BaTiO$_{3}$ have resistivity anomaly at certain temperature. Temperature and frequency dependencies of resistivity are also investigated for practical application.ion.

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Dielectric Properties of $Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$ ($Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$계의 유전성)

  • 윤기현;김재현;조경화;송효일
    • Journal of the Korean Ceramic Society
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    • v.23 no.1
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    • pp.7-12
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    • 1986
  • Dielectric properties of $Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$ were investigated from x=0 to 0.20, and temperature range -4$0^{\circ}C$~13$0^{\circ}C$ Density and grain size decreased with increasing Sn content due to grain growth inhibitor. Dielectric constant below the Curie temperature increased with increasing Sn content and dissipation factor dec reased. These results are due to grain size effect and internal stress. Curie temperature was shifted to lower temperature with increasing ratio of total polarizability to volume resulting from substitution of $Ba^{2+}$ ion with $Ca^{2+}$ ion $Ti^{4+}$ ion with $Sn^{4+}$ ion.

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Fabrication and Characterization of Portable Electronic Nose System using Gas Sensor Array and Artificial Neural Network (가스센서 어레이와 인공 신경망을 이용한 소형 전자코 시스템의 제작 및 특성)

  • 홍형기;권철한;윤동현;김승렬;이규정
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.99-102
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    • 1997
  • An electronic nose system is an instrument designed far mimicking human olfactory system. It consists generally of gas (odor) sensor array corresponding to olfactory receptors of human nose and artificial neural network pattern recognition technique based on human biological odor sensing mechanism. Considerable attempts to develop the electronic nose system have been made far applications in the fields of floods, drinks, cosmetics, environment monitoring, etc. A portable electronic nose system has been fabricated by using oxide semiconductor gas sensor array and pattern recognition technique such as principal component analysis (PCA) and back propagation artificial neural network The sensor array consists of six thick film gas sensors whose sensing layers are Pd-doped WO$_3$ Pt-doped SnO$_2$ TiO$_2$-Sb$_2$O$_3$-Pd-doped SnO$_2$ TiO$_2$-Sb$_2$O$_{5}$-Pd-doped SnO$_2$+Pd filter layer, A1$_2$O$_3$-doped ZnO and PdCl$_2$-doped SnO$_2$. As an application the system has been used to identify CO/HC car exhausting gases and the identification has been successfully demonstrated.d.

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A Study on the Dielectric and Pyroelectric Properties of the $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$ Ceramics ($Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$ 세라믹의 유전 및 초전 특성에 관한 연구)

  • Youn, Jong-Weon;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.91-93
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    • 1989
  • x $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$, (0.05$\leq$x$\leq$0.30) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1200{\sim}1300[^{\circ}C]$, 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.30PSS-0.20PT-0.50PZ specimens were 372, 190[$^{\circ}C$]. The pyroelectric coefficient, figure of merits for pyroelectric current and detectivity of the 0.25PSS-0.25PT-0.50PZ specimens had the good values, $5.41{\times}10^{-8}[C/cm^{2}K]$, $27.72{\times}10^{-12}[Ccm/J]$, $7.65{\times}10^{-10}{Ccm/J]$, respectively.

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Fabrication and NOx Sensing Characteristics of $WO_{3}$ Based Thick Film Devices Doped with $TiO_{2}$ and Noble Metals ($TiO_{2}$와 귀금속을 첨가한 $WO_{3}$ 후막 센서의 제조 및 NOx 감응 특성)

  • Lee, Dae-Sik;Han, Sang-Do;Son, Young-Mok;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.6 no.4
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    • pp.274-279
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    • 1997
  • NOx sensors using tungsten oxide films as a base material were prepared and their electrical and sensing characteristics have been investigated. The $WO_{3}$ thick films doped with $SnO_{2}$ or $TiO_{2}$ showed higher sensitivity and better sorption characteristics to NOx gas than the pure $WO_{3}$ films material in air at operating temperature of $400^{\circ}C$. By addition of noble catalysts, such as Ru or Au, to the $TiO_{2}-WO_{3}$ thick films, their sensitivity, recovery and selectivity to NOx gas were found to be more enhanced.

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lTiO-based DSCs fabrication (lTiO-based DSCs 제작)

  • Paeng, Sung-Hwan;Kwak, Dong-Joo;Sung, YouI-Moon;Lee, Don-Kyu
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2009.10a
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    • pp.399-401
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    • 2009
  • Transparent conductive metal oxide films of $In_{2-x}Ti_xO_3$ (ITiO) and $In_{2-x}Sn_xO_3$ (ITO) were deposited by RF magnetron sputtering at substrate temperature of $300^{\circ}C$ and at high rate (${\sim}10$nm/min). Electrical and optical properties of the films were investigated as well as film structure and morphology, as it is compared with the commercial F:$SnO_2$ (FTO) glass. Near infrared ray transmittance of ITiO is the highest for wavelengths over 1000nm, which can increase dye sensitized compared to ITiO and FTO. Dye-sensitized solar cells (DSCs) were fabricated using the ITiO, ITO and FTO. Photoconversion efficiency (${\eta}$) of DSC using ITiO is 5.5%, whereas 5.0% is obtained from DSC with ITO. both at 100 mW/$cm^2$ light intensity.

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The Effect of Adding Process of $Zn(NO_3)_2$ on the Properties of $(Zr_{0.8}Sn_{0.2})TiO_4$ Dielectrics Prepared by Coprecipitation of $(Zr^{4+}, Ti^{4+})$-Hydroxides in the Presence of $SnO_2$ Particles ($Zn(NO_3)_2$의 첨가공정이 부분 공침법으로 제조된 $(Zr_{0.8}Sn_{0.2})TiO_4$ 유전체의 특성에 미치는 영향)

  • 임경란;장진욱;홍국선;박순자
    • Journal of the Korean Ceramic Society
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    • v.32 no.6
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    • pp.719-725
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    • 1995
  • ZST powders were synthesized by coprecipitation of (Zr4+, Ti4+)-hydroxide in the presence of SnO2 particles. Zn(NO3)2 was used as a sintering additive, and according to the adding sequence, sintering and dielectric properties were investigated. Sintered densities of ZST prepared by adding Zn(NO3)2 before calcination were a little higher than those added after calcination, and dielectric properties of the specimen added by Zn(NO3)2 after calcination were better (sintered at 125$0^{\circ}C$/2 h ; Q$\times$f(GHz)=49, 000, $\varepsilon$r=41) than before calcination (Q$\times$f(GHz)=42, 000, $\varepsilon$r=39.5). Through the observation of TEM, it was identified that the cause was due to the difference of the degree of Zn2+ diffusion into grains. With increasing sintering time from 2 to 8 hrs, grain size was doubled and dielectric properties were somewhat deteriorated.

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Microwave Dielectric Properties of $(Zr_{1-x}Sn_x)TiO_4$ Ceramics in the Response Surface Methodology (반응표면분석법에 의한 $(Zr_{1-x}Sn_x)TiO_4$계 교주파 유전 특성)

  • Kim, Wang-Sup;Choi, Hwan;Moon, Myoung-Lib;Kim, Kyung-Yong
    • Journal of the Korean Ceramic Society
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    • v.32 no.5
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    • pp.535-542
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    • 1995
  • The effect of sintering temperature, sintering time and forming pressure on microwave dielectric properties of (Zr1-xSnx)TiO4 ceramics containing 1.0wt% B2O3, 0.3 wt% La2O3 and 1.0wt% NiTa2O6 was investigated using the response surface methodology. The optimum values of processing variables were determined based on the reproducibility. The optimum values of the dielectric constant of >35. Q.f0 of >55000 and $\tau$f=$\pm$5 ppm/$^{\circ}C$ could be obtained when the sample was pressed at 500~600kg/$\textrm{cm}^2$ and sintered at 1500~155$0^{\circ}C$ for 2~3 hrs.

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