Transition temperature shiftin barium titanate with $SnO_{2}$

Stonnic Dioxide첨가에 따른 Barium Titanate의 전이온도의 이동

Semiconducting Barium Titanate shows resistivity anomaly near the transition temperature 120.deg. C. Its transition temperature decreases about 6-7.deg. C per 1 mole % SnO$_{2}$, which is likely to compose (BaSb) (TiSn) $O_{3}$ structure by making Sn$^{+4}$ ions occupy Ti$^{+4}$ ion sites. Grain boundories, whose existance is the cause of having high resistivity in Semiconducting BaTiO$_{3}$ disappear due to the spontaneous polarization below the transition temperature, and it is believed that the phase transition makes semiconducting BaTiO$_{3}$ have resistivity anomaly at certain temperature. Temperature and frequency dependencies of resistivity are also investigated for practical application.ion.