• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.242-245
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• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.140-148
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• 1995

Optical properties of $TiO_{2}$. Ag filrns and $TiO_{2}/Ag/TiO_{2}$ multilayer filrns with different thickness were predicted using the transfer matrix, and these results were compared with real transmittance curves of the sputterdeposited films. With the complex refractive indices, it was possible to predict transmittance characteristics which were close to real data for $TiO_{2}$ and Ag films. Due to the diffusion and agglomeration of Ag during $TiO_{2}$ deposition, optical properties of the sputterdeposited $TiO_{2}/Ag/TiO_{2}$ films were found to be very different from the transmittance curves predicted using the transfer matrix. Using deposition of 4nm-thick or 6nm-thick TI layers as a diffusion barrier, however, the transmittance curves of $TiO_{2}/Ti/Ag/Ti/TiO_{2}$ five-layer films became similar to ones predicted for $TiO_{2}/Ag/TiO_{2}$ threeiayer films.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.6
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• pp.291-295
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• 2015

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.609-612
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• 2002

In this study, the electrical properties were investigated for the deposited Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films grown on $Pt/TiO_2/SiO_2/Si$ substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the $Ar/O_2$ rates were investigated. In the case of the BSNT thin films deposited with condition of 60/40$(Ar/O_2)$ ratio, the $BaTiO_3$, $SrTiO_3$ and $BaNbO_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20$(Ar/O_2)$ ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.7-10
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• 2002

$TiO_2$ thin films were prepared by coating and subsequent pyrolysis processes using Titanium-naphthenate as a raw material. $TiO_2$ thin films were made by spin-coating technique on the glass substrates, and heat treated at 45$0^{\circ}C$, The transmittance, refractive index, crystallinity and surface morphology of the $TiO_2$ thin films were measured by UV/Vis spec trophotometer, x-ray diffractometer and scanning electron microscope. $TiO_2$thin films on the slide glass showed the trans mittance of 70-90% and refractive index of 2.6 at 420 nm. The results of XRD and SEM showed that the $TiO_2$ thin films exhibited the anatase phase and the thread-like surface morphology.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.620-626
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• 2018

Highly self-cleaning thin films of $TiO_2-SiO_2$ co-doped with Ag and F are prepared by the sol-gel method. The asprepared thin films consist of bottom $SiO_2$ and top $TiO_2$ layers which are modified by doping with F, Ag and F-Ag elements. XRD analysis confirms that the prepared thin film is a crystalline anatase phase. UV-vis spectra show that the light absorption of $Ag-F-TiO_2/SiO_2$ thin films is tuned in the visible region. The self-cleaning properties of the prepared films are evaluated by a water contact angle measurement under UV light irradiation. The photocatalytic performances of the thin films are studied using methylene blue dye under both UV and visible light irradiation. The $Ag-F-TiO_2/SiO_2$ thin films exhibit higher photocatalytic activity under both UV and visible light compared with other samples of pure $TiO_2$, Ag-doped $TiO_2$, and F-doped $TiO_2$ films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.317-321
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• 2003

In this study, the structural properties were Investigated for the deposited (Ba,Sr)(Nb,Ti)O$_3$[BSNT] thin films grown on Pt/TiO$_2$/SiO$_2$/Si substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the Ar/02 ratios were Investigated. In the case of the BSNT thin films deposited with condition of 60/40(Ar/O$_2$) ratio, the BaTiO$_3$, SrTiO$_3$ and BaNbO$_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20(Ar/O$_2$) ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.