• Corrosion Science and Technology
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• v.22 no.5
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• pp.359-367
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• 2023

The localized corrosion resistance of the Ni-based Inconel 718 alloy after solution heat treatment was evaluated using electrochemical techniques in a solution of 25 wt% NaCl and 0.5 wt% acetic acid. Solution heat treatment at 1050 ℃ for 2.5 hours resulted in an increased average grain diameter. Both Ti carbides (10 ㎛ diameter) and Nb-Mo carbides (1 - 9 ㎛ diameter) were distributed throughout the material. Despite heat treatment, the shape and composition of these carbides remained consistent. An increase in solution temperature led to a decrease in pitting potential value. However, the pitting potential value of solution heat-treated Inconel 718 was consistently higher than that of as-received Inconel 718 at all tested temperatures. Localized corrosion initiation occurred at 0.4 V_SSE in a temperature environment of 80 ℃ for both as-received and solution heat-treated Inconel 718 alloys. X-ray photoelectron spectroscopic analysis indicated that the composition of the passive film formed on specimen surfaces remained largely unchanged after solution heat treatment, with O1s, Cr2p_3/2, Fe2p_3/2, and Ni2p_3/2 present. The difference in localized corrosion resistance between as-received and solution heat-treated Inconel 718 alloys was attributable to microstructural changes induced by the heat treatment process.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1861-1866
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• 2012

The new semiconducting copolymers with 4,4-dialkyl-$4H$-cyclopenta[2,1-$b$:3,4-$b^{\prime}$]dithiophene and 2,2-dimethyl-$2H$-benzimidazole units were synthesized. The fused aromatic rings, such as cyclopentadithiophene (CPDT) unit, can make the polymer backbone more rigid and coplanar, which induces long conjugation length, narrow band gap, and strong intermolecular ${\pi}-{\pi}$ interaction. The stacking ability was controlled through attaching of linear or branched alkyl side chains. The spectra of PEHCPDTMBI and PHCPDTMBI in the solid films show absorption bands with maximum peaks at 401, 759 and 407, 768 nm, and the absorption onsets at 925 and 954 nm, corresponding to band gaps of 1.34 and 1.30 eV, respectively. The devices comprising PHCPDTMBI with $TiO_X$ showed a $V_{OC}$ of 0.39 V, a $J_{SC}$ of 1.14 $mA/cm^2$, and a $FF$ of 0.34, giving a power conversion efficiency of 0.15%. The PHCPDTMBI with linear alkyl chain on CPDT shows good solubility in organic solvent with higher PCE value than that of PEHCPDTMBI.

• Economic and Environmental Geology
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• v.25 no.3
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• pp.259-273
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• 1992

The Seongsan mine is one of the largest dickite deposits in the southwestern part of the Korean Peninsula. The main constithent minerals of the ore are dickite and quartz with accessory alunite, kaolinite and sericite. The geology around the Seongsan mine consists mainly of the late Cretaceous felsic volcanic rocks. In the studied area, these rocks make a synclinal structure with an axis of E-W direction plunging to the east. Most of the felsic volcanic rocks have undergone extensive hydrothermal alteration. The hydrothermally altered rocks can be classified into the following zones: Dickite, Dickite-Quartz, Quartz, Sericite, Albite and Chlorite zones, from the center to the margin of the alteration mass. Such zonal arrangement of altered rocks suggests that the country rocks, most of which are upper part of the rhyolite and welded tuff, were altered by strongly acid hydrothermal solutions. It is reasonable to consider that initial gas and solution containing $H_2S$ and other compounds were oxidized near the surface, and formed hydrothermal sulfuric acid solutions. The mineralogical and chemical changes of the altered rocks were investigated using various methods, and chemical composition of fifty-six samples of the altered rocks were obtained by wet chemical analysis and X.R.F. methods. On the basis of these analyses, it was found that some components such as $SiO_2$, $Al_2O_3$, $Fe_2O_3$, CaO, MgO, $K_2O$, $Na_2O$ and $TiO_2$ were mobilized considerably from the original rocks. The formation temperature of the deposits was estimated as higher than $200^{\circ}C$ from fluid inclusion study of samples taken from the Quartz zone. On the basis of the chemical composition data on rocks and minerals and estimated temperatures, the hydrothermal solutions responsible for the formation of the Seongsan dickite deposits were estimated to have the composition: $m_{K^+}=0.003$, $m_{Na^+}=0.097$, $m_{SiO_2(aq.)}=0.008$ and pH=5.0, here "m" represents the molality (mole/kg $H_2O$).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.449-453
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• 2016

$HA(hydroxyapatite)/{\beta}-TCP$ (tricalcium phosphate) biomaterial (BCP; biphasic calcium phosphate) is widely used as bone cement or scaffolds material due to its superior biocompatibility. Furthermore, $NH_4HCO_3$ as a space holder (SH) has been used to evaluate feasibility assessment of porous structured BCP as bone scaffolds. In this study, using a spark plasma sintering (SPS) process at 393K and 1373K under 20MPa load, porous $HA/{\beta}-TCP$ biomaterials were successfully fabricated using $HA/{\beta}-TCP$ powders with 10~30 wt% SH, TiH2 as a foaming agent, and MgO powder as a binder. The effect of SH content on the pore size and distribution of the BCP biomaterial was observed by scanning electron microscopy (SEM) and a microfocus X-ray computer tomography system (SMX-225CT). The microstructure observations revealed that the volume fraction of the pores increased with increasing SH content and that rough pores were successfully fabricated by adding SH. Accordingly, the cell viabilities of BCP biomaterials were improved with increasing SH content. And, good biological properties were shown after assessment using Hanks balanced salt solution (HBSS).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1213-1217
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• 2008

Poling is an important process in fabricating PZT ceramic devices such as filters and resonators and activates piezoelectricity to sintered PZT ceramics. Tolerance of the operating frequency of these devices is tightly required in applications. And a factor to attribute the tolerance is the temperature dependence of the resonance frequency of PZT ceramics. In this paper the relationship of poling strength and temperature dependence of resonance frequency of PZT specimens was studied. The $Pb(Zr_{0.53}Ti_{0.47})O_3$ ceramics were fabricated and the poling strengths were chosen to be 0.5, 1.5, 2.5 and 3.5 [kV/mm]. The dielectric constant of the specimen poled in poling strength 0.5 [kV/mm] was less than that of unpoled specimen and the specimen poled in higher electric field had the higher dielectric constant. (002) peak in X-ray diffraction patterns of the specimens increased as poling strength increased. And the change of resonance frequency of the specimens according to the variation of temperature was measured. Resonance frequency of all specimens increased as the temperature increased. The specimen poled in higher electric field had the smaller positive temperature coefficient of resonance frequency. The effect that temperature coefficient of resonance frequency becomes smaller is obtained when Zr mole in PZT composition equation increase. Controlling the poling strength is believed to be a method to adjust the temperature stability of resonance frequency of the PZT ceramic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.165-170
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• 2015

Ceramics biomaterials are useful as implant materials in orthopedic surgery. In this study, porous HA(hydroxyapatite)/${\beta}$-TCP(tricalcium phosphate) composite biomaterials were successfully fabricated using HA/${\beta}$-TCP powders with 10-30 wt% $NH_4HCO_3$ as a space holder(SH) and $TiH_2$ as a foaming agent, and MgO powder as a binder. The HA/${\beta}$-TCP powders were consolidated by spark plasma sintering(SPS) process at $1000^{\circ}C$ under 20 MPa conditions. The effect of SH content on the pore size and distribution of the HA/${\beta}$-TCP composite was observed by scanning electron microscopy(SEM) and a microfocus X-ray computer tomography system(SMX-225CT). These microstructure observations revealed that the volume fraction of the pores increased with increasing SH content. The pore size of the HA/${\beta}$-TCP composites is about $400-500{\mu}m$. The relative density of the porous HA/${\beta}$-TCP composite increased with decreasing SH content. The porous HA/${\beta}$-TCP composite fabricated with 30%SH exhibited an elastic modulus similar to that of cortical bone; however, the compression strength of this composite is higher than that of cortical bone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.346-346
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• 2007

압전세라믹 재료는 현재 압전 변압기, actuator, transducer, sensor, speaker 등에 광범위하게 이용이 되고 있다. 이 중에서 압전세라믹 소결체를 이용한 스피커의 제조는 가공이 까다롭고, 대형의 크기로 제작 시 소자가 깨지는 등의 많은 제약을 받고 있으며, 저음 특성이 떨어져 응용 범위가 한정되어 있다. 따라서 최근에는 이러한 단점을 극복하기 위하여 세라믹/고분자 복합체를 이용한 필름 스피커를 제작하고자 시도하고 있다. 이러한 세라믹/고분자 0-3형 압전 복합체를 이용할 경우, 제품의 경량화를 실현할 수 있고, 크기나 환경의 영향을 거의 받지 않으므로, 고기능성 스피커로의 응용에 적합할 것으로 보인다. 따라서 본 연구에서는 PZT계의 세라믹와 PVDF, PVDF-TrFE, Polyester, acrylic resin 등의 여러 고분자 물질과의 복합체를 제조하여 압전특성을 평가하였다. 본 실험은 먼저 $(Pb_{1-a-b}Ba_aCd_b)(Zr_xTi_{1-x})_{1-c-d}(Ni_{1/3}Nb_{2/3})_c(Zn_{1/3}Nb_{2/3})_dO_3$ (이하 PZT라 표기)의 최적화 조성을 선택하여, $1050^{\circ}C$에서 소결된 분말을 48시간 ball milling방법 로 약 $1{\mu}m$ 크기로 분쇄하였다. 고분자 물질들은 알맞은 용제들을 선택하여 녹였다. 그 다음 소결된 PZT분말과 고분자를 50:50, 60:40, 65:35, 70:30등의 무게 분율로 혼합하고, 분산제, 소포제 등을 첨가하여 3단 roll mill을 이용하여 충분히 분산시켜 페이스트 (Paste)를 제조하였다. 제조된 페이스트를 ITO가 코팅된 PET필름 위에 스크린 프린팅 법을 사용하여 인쇄하여 $120^{\circ}C$에서 5분간 건조하였다. 코팅된 복합체의 두께는 약 $80{\mu}m$ 정도로 측정되었다. Ag 페이스트를 이용한 상부 전극 형성에도 스크린 프린팅 법을 적용하였다. 이를 $120^{\circ}C$에서 4 kV/mm의 DC 전계로 분극 공정을 수행한 후 전기적 특성을 평가하였다. 유전특성을 조사하기 위해서 LCR meter (EDC-1620)를 사용하였고, 시편의 결정구조는 XRD (Rigaku; D/MAX-2500H)을 통해 분석하였으며, 전자현미경(SEM)을 이용하여 미세구조를 분석하였다. 압전 전하상수$(d_{33})$ 값은 APC 8000 모델을 이용하여 측정하였다. PZT의 혼합비가 증가할수록 비유전율 및 압전 전하 상수 등의 전기적 특성이 증가되었다. 또 여러 고분자 물질 중에서 PVDF-TrFE 수지가 가장 우수한 특성을 보였다. 이는 PVDF-TrFE 수지가 압전성을 나타내기 때문인 것으로 판단되었다.