• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3407-3412
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• 2012

The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

• KIEE International Transactions on Electrophysics and Applications
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• 제12C권4호
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• 분석과학
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• 제5권4호
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• pp.409-415
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• 1992

$BaTiO_3$의 선구물질을 하소시키는 과정에서 얻은 X-선 회절 패턴에 인자분석법을 적용하였다. 선구물질은 수용액계에서 바륨과 티타늄의 질산염용액을 시발물질로 하여 합성하였으며 이를 여러 온도에서 하소시킨 후 X-선 회절 패턴을 얻었다. X-선 회절각에 대한 피이크세기로 구성된 데이타 매트릭스에 인자분석법을 적용시켜 3개의 인자가 존재함을 확인하였다. 3개의 인자는 $BaCO_3$, $BaTiO_3$ 및 $Ba_2TiO_4$였으며 하소온도에 따른 3가지 성분의 상대적인 농도 변화를 규명하였다.

• 대한화학회지
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• 제29권6호
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• pp.582-591
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• 1985

티타늄 금속판을 수증기 산화하여 만든 Ti$O_{2-x}$ 박막과 Ti$O_2$ 단결정을 알곤기체속에서 환원한 시료를 사용하여 이들의 광전기화학적 성질을 연구하였다. 1M NaOH전해질 용액에서 Ti$O_{2-x}$ 전극에 200~800nm 사이의 광을 조사하였을 때 자외부 영역에서는 320nm에서, 가시부 영역에서는 520nm, 620nm 그리고 740nm에서 전류의 peak가 나타났다. 이미 보고된 것과는 대조적으로 가시부 영역의 이들 peak는 grating monochromator의 2차선의 영향에 의하여 나타난 것임이 밝혀졌다.

• 한국재료학회지
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• 제32권5호
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• pp.264-269
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• 2022

Ti₃C₂T_x MXene, which is a representative of the two-dimensional MXene family, is attracting considerable attention due to its remarkable physicochemical and mechanical properties. Despite its strengths, however, it is known to be vulnerable to oxidation. Many researchers have investigated the oxidation behaviors of the material, but most researches were conducted at high temperatures above 500 ℃ in an oxidation-retarding environment. In this research, we studied changes in the structural and electrical properties of Ti₃C₂T_x MXene induced by low-temperature heat treatments in ambient conditions. It was found that a number of TiO₂ particles were formed on the MXene surface when it was mildly heated to 200 ℃. Heating the material to higher temperatures, up to 400 ℃, the phase transformation of Ti₃C₂T_x MXene to TiO₂ was accelerated, resulting in a TiO₂/Ti₃C₂T_x hybrid. Consequently, the metallic nature of pure Ti₃C₂T_x MXene was transformed to semiconductive behavior upon heat-treating at ≥ 200 ℃. The results of this research clearly demonstrate that Ti₃C₂T_x MXene may be easily oxidized even at low temperatures once it is exposed to air.

• 한국세라믹학회지
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• 제29권4호
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• pp.259-264
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• 1992

The crystal structures and the bonding characteristics in $(Ba_xPb_{1-x})TiO_3$ have been investigated by X-ray diffraction analysis and infrared spectrophotometry. As $Ba^{2+}$ ion in $BaTiO_3$ were substituted by $Pb^{2+}$ ion, the structures were changed to orthorhombic from tetragonal, and also the covalent character in Ti-O bond increased, and then the dielectric constants decreased gradually. In the mixed oxide containing $Pb^{2+}$ ion more than 50%, the change-transfer energy of titanium ion increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.256-259
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• 1996

$(Sr_{1-x}{\cdot}Ca_x)TiO_3+yNb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.004$1350[^{\circ}C]$ in a reducing atmosphere($N_2$ gas). Dielectric propertries were investigated with contents of $Nb_2O_5$. The grain size and dielectric constant increase with increase $Nb_2O_5$, but decrease in $Nb_2O_5$ exceed($Nb_2O_5=0.6[mol%]$). Also, the temperature characteristics of the dielectric loss factor exhibited a stable value within 0.5[%]. The capacitance characteristics appeals a stab]e value in ${\pm}10[%]$.

• 공업화학
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• 제31권2호
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• pp.200-207
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• 2020

본 연구에서는, NH₃-SCO (selective catalytic oxidation) 반응에서 RuTi 촉매 제조 시 소성온도에 따른 영향을 확인하였다. RuTi 촉매는 습윤 함침법을 이용하여 제조되었고, 공기 분위기에서 400~600 ℃로 4 h 동안 소성되었다. 촉매는 RuTi x00로 표기되었으며, x00는 소성온도를 의미한다. XRD, TEM, H₂-TPR 분석에 따르면, RuTi x00 촉매는 소성온도가 증가할수록 활성금속의 분산도가 감소하는 것을 나타내었다. XPS, NH₃-TPD 분석을 통하여, 낮은 분산도를 갖는 촉매는 표면 흡착 산소 종(O_β) 및 NH₃ 흡착량이 감소하는 특성을 나타내었다. 따라서 RuTi 400 촉매는 TiO₂ 표면에 활성금속이 가장 잘 분산되었으며, NH₃ 제거 효율이 가장 우수하였다.

• 한국결정학회지
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• 제13권3_4호
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• pp.172-176
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• 2002

Pb(Mg /sub 1/3/Nb/sub 2/3/)O₃-PbTiO₃ 계 완화형 강유전체에서 PbTiO₃ 첨가량 변화 및 온도 변화에 따른 상전이 거동을 초전특성 및 유전완화현상 고찰을 통해 고찰하였다. -40∼200℃의 상전이 온도범위에 걸쳐 초전 및 유전특성을 살펴보았으며 특히 Vogel-Fulcher 관계식에 의한 freezing temperature를 도출하였다. 이러한 모든 실험적 결과들로부터 기존에 제안되었던 Pb(Mg /sub 1/3/Nb/sub 2/3/)O₃-PbTiO₃ 고용체 시스템에 대한 상평형도를 다소 수정하여 제안하였다.

• Journal of Electrical Engineering and Technology
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• 제2권1호
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• pp.98-101
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• 2007

Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.