• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.85-90
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• 2017

The $TiCl_4$ as a blocking material is adsorbed in the mesoporous $TiO_2$ electron transfer layer(ETL) of the Perovskite solar cell to prevent the direct contact between the FTO electrode and the photoactive layer(AL), and facilitate the movement of the electrons between $TiO_2:TiCl_4$ ETL and Perovskite AL to improve the photoelectric conversion efficiency(PCE). The structure of the perovskite solar cell is FTO/$TiO_2:TiCl_4$/Perovskite($CH_3NH_3PbI_3$)/spiro-OMeTAD/Ag. It was investigated that the dipping time of the $TiO_2$ into $TiCl_4$ aqueous solution affects on the photoelectric characteristics of the device. By the dipping for 30 minutes, the PCE of the perovskite solar cell with the $TiO_2:TiCl_4$ ETL was the highest 10.46%, which is 27% higher than the cell with $TiO_2$ ETL. From SEM, EDS, and XRD characterization on the $TiO_2:TiCl_4$ ETL and the perovskite AL, it was measured that the decrease of the porosity of the $TiO_2$ layer, the detection of the Cl component by the $TiCl_4$ adsorption, the cube-type morphology of perovskite AL, and shift of the $PbI_2$ peak of the perovskite AL. From these results, it was confirmed that the $TiO_2:TiCl_4$ ETL and the perovskite AL were formed.

• Journal of the Korean Society for Heat Treatment
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• v.2 no.4
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• pp.11-18
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• 1989

To investigate the influence of $TiCl_4$, $N_2$ inlet fraction on the TiN layer, TiN film was deposited onto the STC3 and STD11 steel from gas mixtures of $TiCl_4/N_2/H_2$ by the radio frequency plasma assisted chemical vapor deposition. The films were deposited at various $TiCl_4$, $N_2$ inlet fractions. The results showed that the film thickness was increased with $TiCl_4$ inlet fraction. However, while the thickness was increased with $N_4$ inlet fraction under 0.4 the thickness was decreased with increasing $N_2$ inlet fraction over 0.4. The density of deposited films was varied as $TiCl_4$, $N_2$ inlet fraction and its maximum value was about $5.6g/cm^3$. The contents of chlorine were increased with increasing $TiCl_4$ inlet fraction and nearly constant with increasing $N_2$ inlet fraction.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Journal of Korean Society of Environmental Engineers
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• v.38 no.3
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• pp.150-153
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• 2016

This study evaluates the efficacy of titanium tetrachloride ($TiCl_4$) on phosphorus (P) removal in synthetic wastewater. Jar test experiments were performed at various $TiCl_4$ concentration (0.25-0.59 mM), and intensities of slow (30-60 rpm) and rapid (100-250 rpm) mixings to determine the conditions at which P removal was most efficient. The P-removal efficiency was highest (about 99%) at $TiCl_4$ concentration $([TiCl_4])=0.39mM$ with rapid-mixing intensity=100 rpm and slow-mixing intensity=30 rpm. The slow-mixing intensity was more sensitive than the rapid-mixing intensity to the P removal efficiency when [$TiCl_4$] was low ($0.25{\leq}[TiCl_4]{\leq}0.27mM$).

• Journal of Korean Society on Water Environment
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• v.31 no.6
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• pp.619-624
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• 2015

This study experimentally determined the effect of titanium tetrachloride (TiCl₄) concentration ([TiCl₄]) (0.25-0.55 mM) and initial pH (3-11) on phosphorus (P) removal in synthetic wastewater (2 mg P/L). The P removal efficiency increased when [TiCl₄] increased. The P removal efficiency showed a parabolic trend with an inflection point at pH 7. At the molar ratio of TiCl₄ and P>6.2, the P removal efficiency was over 90% and the residual P concentration was less than 0.2 mg/L. Within the design boundaries, the complete P removal could be achieved at 7.0≤initial pH≤8.5 and 0.43≤[TiCl₄]≤0.55 mM. The final pH was over 5.8 at initial pH≥7.7 and [TiCl₄]≥0.35 mM. The results showed that TiCl4 was effective in P removal in water so that it could be an alternative chemical for P removal.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.745-751
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• 2012

The Kroll process for magnesium reduction of titanium tetrachloride is used for mass production of titanium sponge. The present study was conducted in a lab scale reactor to develop a better understanding of the mechanism of titanium sponge formation in the Kroll reactor with respect to reaction degrees and the feeding rate of $TiCl_4$. The $MgCl_2$ produced during the initial stage of the reaction was not sunk into the molten magnesium, but covered the surface of the molten magnesium. As a result, subsequently fed $TiCl_4$ reacted with Mg exposed on the edge of molten $MgCl_2$ in the crucible. Therefore, titanium sponge grew toward the center of the crucible from the edge. The temperature of the molten magnesium increased remarkably with the increasing feeding rate of $TiCl_4$. Consequently, fed $TiCl_4$ reacted at the upper side of the crucible with evaporated Mg, and produced titanium on the upper surface of the crucible wall, which increased considerably with the feeding rate of $TiCl_4$.

• Advances in materials Research
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• v.6 no.3
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• pp.303-316
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• 2017

In this article, novel olefin polymerization catalyst with lower cost and simple synthetic process were developed, $ArOTiCl_3$ complexes [$(2-OMeC_6H_4O)TiCl_3(C1)$, $(2,4-Me_2C_6H_3O)TiCl_3(C2)$, $TiCl_3(1,4-OC_6H_4O)TiCl_3(C3)$, $TiCl_3(1,4-OC_6H_2O-Me_2-2,5)$ $TiCl_3(C4)$] and corresponding $(ArO)_2TiCl_2$ complexes [$TiCl_2(OC_6H_4-OMe-2)_2(C5)$ and $TiCl_2(OC_6H_3-Me_2-2,6)_2(C6)$] have been synthesized by the reaction of $TiCl_4$ with phenol, all these complexes were well characterized with $^1H$ NMR, $^{13}C$ NMR, MASS and EA. When combined with methylaluminoxane (MAO), the $ArOTiCl_3/MAO$ system shows high activity for ethylene copolymerization with 1-octene and copolymer was obtained with broaden molecular weight distribution (MWD). The $^{13}C$ NMR result of polymer indicates that the 1-octene incorporation in polymer reached up to 8.29 mol%. The effects of polymerization temperature, concentration of polymerization monomer and polymerization time on the catalytic activity have been investigated.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ thin films have attracted great interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2/Ar$ plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage=600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2 the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is $480{\AA}/min$ at 10 % $BCl_3$ to $Cl_2/Ar$. The change of Cl, B radical density measured by optical emission spectroscopy(OES) as a function of $BCl_3$ percentage in $Cl_2/Ar$. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2/Ar$. To study on the surface reaction of (Ba, Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion bombardment etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and $TiCl_4$ is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about 65~70$^{\circ}$.

• Resources Recycling
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• v.26 no.5
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• pp.54-60
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• 2017

In this study, we investigated the effect of $TiCl_4$ injection time on the Kroll reaction at a given weight ratio of $TiCl_4$ and Mg. The reduction reaction was investigated by measuring the temperature change according to $TiCl_4$ injection time and observing the cross section and appearance of the Ti sponge after the reaction. The temperature increment due to Kroll reaction heat generation was found to be linearly proportional to the $TiCl_4$ feed rate. In the graph of $TiCl_4$ injection time and reduction tank temperature, initial temperature peaks were observed irrespective of the injection conditions. This is interpreted to mean a temporary interruption of reaction due to $MgCl_2$ formation after the initial Kroll reaction. In addition, when the cross section of the sponge was observed, a large amount of spherical Mg particles was observed in $MgCl_2$. We can infer that this is the process of continuously feeding the unreacted Mg surface, so that a continuous Kroll reaction takes place. The sponge appearance showed that the coalescence or growth of the Kroll reacted Ti particles can be controlled by the cooling rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.161-161
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• 2012

질화티타늄(Titanium Nitride, TiN)은 화학적 안정성이 우수하고, N/Ti 원소 비율에 따라 열전도성 및 전기전도성이 변화하는 특성을 가지고 있어서 Metal Insulator Silicon (MIS) 나 Metal Insulator Metal (MIM) capacitor의 metal electrode 물질로 적용되고 있다. $TiCl_4$와 $NH_3$ gas를 이용하여 $500^{\circ}C$ 이상의 고온 조건에서 Chemical Vapor Deposition (CVD) 법으로 TiN 박막을 증착하는 방식이 가장 널리 사용되고 있으나, TiN 박막 내의 Chlorine (Cl) 원소가 SiO2 두께와 누설전류 밀도를 증가시키는 요인으로 작용하므로 Cl의 거동 및 함량 제어를 통한 전기적인 특성의 향상 평가가 요구되고 있다[1-3]. 본 실험에서는 $SiO_2$ 위에 TiN을 적층 한 구조에서 magnetic sector type의 Secondary Ion Mass Spectrometry (SIMS)를 이용하여 Cl 원소의 검출도 개선 방법을 연구하였다. 일반적인 $Cs^+$ 이온을 이용하여 $Cl^-$ 이온을 검출할 경우에는 TiN 하부에 $SiO_2$가 존재함에 따른 charging effect와 mass interference가 발생되는 문제점이 관찰되었다. 이를 개선하기 위해 Cl과 Cs 원소가 결합된 $ClCs^+$ cluster ion을 검출하는 방법을 시도하였으나, Cl- 이온 검출 방식에 비해 오히려 낮은 검출도를 나타내었으나 Cl 원소가 속하는 halogen 족 원소의 높은 전자 친화도 특성을 이용한 $ClCs_2^+$ cluster ion을 검출하는 방법[4]을 적용한 경우에는 $ClCs^+$ 방식에 비해 검출도가 3order 개선되는 결과를 확보하였으며, 이 결과를 토대로 Cl dose ($atoms/cm^2$) 와 Rs (ohm/sq) 간의 상관 관계에 대해 고찰하고자 한다.