• Korean Journal of Optics and Photonics
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• v.6 no.1
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• pp.39-44
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• 1995

3차원 .delta.-potential을 가진 원자 모델을 이용하여 Nd:YAG(1064nm), Ti:sapphire(806nm), 색소(616nm), XeCl(308nm) 레이저를 기본파로 하고, 1차 이온화된 K/sup +/, Na/sup +/, Li/sup +/ 등의 알칼리 금속 이온을 비선형 매질로 할 때 고차고조파 분포를 수치적으로 해석하였다. 계산 결과 고차고조파 발생에서 특징적으로 나타나는 plateau는 비선형 매질의 이온화 에너지가 클수록, 기본파의 파장이 길수록 높은 차수에서 폭넓게 나타나고, 그 강도는 감소한다.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.10a
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• pp.217-222
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• 1995

1994년 11월에 나타난 고리 1호기 증기발생기의 전열관 누설에 대한 원인 조사결과, 손상원인은 2차측 응력부식균열(ODSCC)로 밝혀졌으므로, 이에 따른 단기적인 손상완화대책으로 (1) TiO$_2$와 보론산을 첨가한 틈새 세정, (2) TiO$_2$를 첨가한 하이드라진 담금, (3) $Na^{+}$/Cl$^{-}$ 몰비 조절, (4) 용존산소 제거, (5) T$_{HOT}$ 감소 등을 선정하였다. 이와 같은 완화 대책을 적용한 경우의 ODSCC 손상진전율을 확률론적으로 분석한 결과, 증기발생기교체(1998년 예정) 이전까지 전열관 누설에 의한 운전정지 가능성은 매우 낮게 나타났다.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.205-208
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• 2001

Schottky barrier diodes are fabricated on a intrinsic GaN(4${\mu}{\textrm}{m}$) epitaxial structure grown by rf plasma molecular beam epitaxy (MBE) on sapphire substrates. First, We make Ohmic electrodes (Ti/Al/Ti/Au) by evaporator. Next, we contact RuO$_2$ by dipping in the solution (RuCl$_3$.HClO$_4$), and then we deposit Ni/Au on the surface of RuO$_2$ by evaporator. We study the electrical characteristics of GaN Schottky barrier diodes made by these methods. Measurements are C-V, I-V, SEM, EDX, and XRD for the characteristics of devices. Thickness of RuO$_2$ layer depends on supplied voltage and dipping time. Device of thinner RuO$_2$ layer have a good Schottky characteristics compare with device of thicker RuO$_2$ layer

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.326-329
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• 1996

In order to synthesize Ba-ferrite fine particles by molten salt method and inhibit the abnormal grain growth of sintered specimen, KCI anti NaCl were added to basic composition to 50% by weight, and added 1 male% of $SiO_2$ to control the shape of Ba-ferrite particles. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substituted with $Co_{2+}$ and $Ti_{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$ $Ti_{x}$ $Co_{x}$ $O_{19}$ , and 1 mole% $SiO_2$ increased the size but shortened c-axis of hexagonal ferrite. Seeds added in Ba-ferrite particle effected inhibition of abnormal grain growth during sintering.ing.g.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.84-89
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• 2009

The turbid/translucent, near colorless(milky) metamorphic sapphire samples from Sri Lanka have been characterized after the heat treatment in $N_2$ at $1650^{\circ}C$. As-received sapphire specimens became bluish-colored and exhibited more clarity after the heat treatment. It was found that the color change at inclusions zoning region is attributed by the dissolution. As received samples contain the micro/nano inclusions such as rutile($TiO_2$), ilmenite($FeTiO_3$), spinel($MgAl_{2}O_{4}$)/ulvospinel($Fe_{2}TiO_{4}$) and apatite($Ca_5(PO_4)_3$), which were dissolved by the heat treatment and form the blue color through $Fe^{2+}/Ti^{4+}$ charge transferring. The microstructures become different because as the dissolution of apatite($Ca_5(PO_4)_3(OH,F,Cl)$) in alumino silicates($Al_{2}SiO_{5}$) occurred, resulting in morphological change with the appearance of(Ca, Mg, Al) silicate on the surface. Both as-received and heat treated samples showed the rhombohedral crystal structure of $Al_{2}O_{3}$.

• Economic and Environmental Geology
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• v.11 no.3
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• pp.89-98
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• 1978

Mineralogy, beneficiation, and processes of titanium ores are reviewed from petrographic viewpoints. The most important titanium minerals are ilmenite ($FeTiO_3$) and rutile ($TiO_2$). Ilmenite will play major role :for raw material, because rutile are rapidly diminishing. Thus, there is a need to develope a successful process for producing high grade Ti02 from ilmenite. Commercial, as well as R and D processes to treat more abundant ilmenite ores fall in three general classess: 1. Iron in ilmenite is partially or completely reduced and separated either physically or chemically. 2. Iron is reduced to ferrous state and chemically leached away from the titanium. 3. Ore is treated to make chlorides either selectively or with subsequent separation and purification of $TiC_4$. Routes and efficiencies of these process technologies are primarily influenced by the particular ore deposit to be mined and secondly by environmental considerations. One deposit parameters which influence ilmenite process technologies are: 1. Complexity of microtextures of ilmenite intergrown with Fe-oxide minerals. 2. Composition of concentrates; ilmenites contain minor amounts of substituted Mg, Mn, and V. These elements plus iron and gangue minerals can cause difficulties to complete reactions, substantial acid consumption, difficulties of removing waste solids, and waste disposal problems. Major contributions to be made by petrologists for process optimization are: characterization and interpretation of compositional and physical changes of raw materials and solids derived from process streams. These informations can play significant role in selecting and improving process steps for titania production.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of Korean Dental Science
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• v.10 no.1
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• pp.10-21
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• 2017

Purpose: The purpose of this study was to investigate the electrochemical characteristics of nanotubular Ti-25Nb-xZr ternary alloys for dental implant materials. Materials and Methods: Ti-25Nb-xZr alloys with different Zr contents (0, 3, 7, and 15 wt.%) were manufactured using commercially pure titanium (CP-Ti), niobium (Nb), and zirconium (Zr) (99.95 wt.% purity). The alloys were prepared by arc melting in argon (Ar) atmosphere. The Ti-25Nb-xZr alloys were homogenized in Ar atmosphere at $1,000^{\circ}C$ for 12 hours followed by quenching into ice water. The microstructure of the Ti-25Nb-xZr alloys was examined by a field emission scanning electron microscope. The phases in the alloys were identified by an X-ray diffractometer. The chemical composition of the nanotube-formed surfaces was determined by energy-dispersive X-ray spectroscopy. Self-organized $TiO_2$ was prepared by electrochemical oxidation of the samples in a $1.0M\;H_3PO_4+0.8wt.%$ NaF electrolyte. The anodization potential was 30 V and time was 1 hour by DC supplier. Surface wettability was evaluated for both the metallographically polished and nanotube-formed surfaces using a contact-angle goniometer. The corrosion properties of the specimens were investigated using a 0.9 wt.% aqueous solution of NaCl at $36^{\circ}C{\pm}5^{\circ}C$ using a potentiodynamic polarization test. Result: Needle-like structure of Ti-25Nb-xZr alloys was transform to equiaxed structure as Zr content increased. Nanotube formed on Ti-25Nb-xZr alloys show two sizes of nanotube structure. The diameters of the large tubes decreased and small tubes increased as Zr content increased. The lower contact angles for nanotube formed Ti-25NbxZr alloys surfaces showed compare to non-nanotube formed surface. The corrosion resistance of alloy increased as Zr content increased, and nanotube formed surface showed longer the passive regions compared to non-treatment surface. Conclusion: It is confirmed that corrosion resistance of alloy increased as Zr content increased, and nanotube formed surface has longer passive region compared to without treatment surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.734-737
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• 2004

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.514-522
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• 2010

Graphite epoxy composite material (GECM) shows high specific strength and its application in the aerospace industry is gradually increasing. However, its application would induce galvanic corrosion between GECM and metallic materials. This work focused on the effects of anodizing and thermal oxidation on galvanic corrosion in a 3.5% NaCl solution between GECM and aluminium and titanium. In the case of anodized aluminium, galvanic corrosion resistance to the GECM was greatly improved by the anodizing treatment regardless of area ratio. In the case of anodized titanium, the anodizing by a formation voltage of 50V increased corrosion resistance of titanium in galvanic tests. Thermal oxidation of titanium also improved corrosion resistance of Ti to GECM.