• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1589-1591
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• 2003

The microwave dielectric properties of $TiTe_3O_8-CaF_2$ ceramics were investigated. All sample of $TiTe_3O_8-CaF_2$ ceramics were prepared by the conventional mixed oxide method, and sintered in the temperature of $730^{\circ}C{\sim}750^{\circ}C$. The structural properties of $TiTe_3O_8-CaF_2$ ceramics were investigated by the X-ray diffractor meter. According to the X-ray diffraction patterns of $TiTe_3O_8-CaF_2$ ceramics, the major phase of the cubic $TiTe_3O_8$ were presented. In the case of $1molTiTe_3O_8-0.1molCaF_2$ ceramics sintered at $740^{\circ}C$ for 5hr., the bulk density, dielectric constant, quality factor were $2.8g/cm^3$, 39.1, 36.100GHz, respectively.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

• Journal of Powder Materials
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• v.7 no.1
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• pp.6-11
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• 2000

Two kinds of Bi2Te3 powders, pure Bi2Te3/2vol.%ZrO2, have been prepared by a mechanical grinding process process. Effect of mixing of the powders on thermoelectric of the sintered body has been investigated by measuring Seebeck Coeffcient, specific electric resistivity and thermal conductivity. With an increase in the weight fraction of the Bi2Te3/2vol.%ZrO2 powder from 0 to 40wt.%. Especially, the figure of merit of the mixedBi2Te3 sintered body increases and thereafter dedreases above 40wt.%. Especially. the figure of merit of the mixed Bi2Te3 sintered bodies with mixing of Bi2Te3/2vol.%ZrO2 powder increased about 1.3time in comparison with the value of the specimen before mixing. Mixing of two kinds of Bi2Te3 powders which have different theramal and electric propertries with each other seemed to be useful methob to increase the figure of merit of Bi2Te3 sintered body.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.24-29
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• 2004

Nanocomposite of Te doped $SiO_2$ films was prepared for the new functional materials like non-linear optic materials, selective absorption and transmission films. The effects of particle size and morphology with different hydrolysis conditions on the properties were examined with TGA/DTA. XRD. UV-spectrometer, SPM, SEM and EDS. It was found that Te/$SiO_2$ films showed high absorption peak at 550nm visible region by plasma resonance of Te fine particles. The Rm surface roughness of the films was about 2.5 nm and the size of Te particles was 5~10nm.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.215-222
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• 2002

Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1078-1084
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• 2003

In order to develop a new type of nonlinear optical materials or photocatlaysts, Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glasses were prepared using conventional melt quenching method, and the crystallization behaviors and optical properties of these glasses was investigated. The optical and physical properties for Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glasses are: refractive index, n=2.04$\pm$0.04; density, p (g/㎤)=4.87$\pm$0.58; optical energy band of the transmission cut-off wavelength, E$_{0}$ (eV)=3.14$\pm$0.04. The transparent glass ceramics consisting of the nanocrysatls were obtained when the Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glass was first heat-treated at 3$50^{\circ}C$ for 1 h and than at 40$0^{\circ}C$ for 1 h. A cubic crystalline phase consisting of the nano-crysatls transforms into a stable phase at temperature above 47$0^{\circ}C$ for 1 h.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1218-1224
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• 2023

We investigated the radiation shielding competence for TeO₂-V₂O₅-MoO₃ glasses. The Phy-X software was used to report the radiation shielding parameters for the present glasses. With an increase in TeO₂ and MoO₃ content, the samples' linear attenuation coefficient improves. However, at low energies, this change is more apparent. At low energy, the present samples have an effective atomic number (Z_eff) that is relatively high (in order of 16.17-24.48 at 0.347 MeV). In addition, the findings demonstrated that the density of the samples is a very critical factor in determining the half value layer (HVL). The minimal HVL for each sample can be found at 0.347 MeV and corresponds to 1.776, 1.519, 1.391, 1.210 and 1.167 cm for Te1 to Te5 respectively. However, the highest HVL of these glasses is recorded at 1.33 MeV, which corresponds to 3.773, 3.365, 3.218, 2.925 and 2.908 cm respectively. The tenth value layer results indicate that the thickness of the specimens needs to be increased in order to shield the photons that have a greater energy. Also, the TVL results demonstrated that the sample with the greatest TeO₂ and MoO₃ concentration has a higher capacity to attenuate photons.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.294-300
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• 2017

$TeO_x$ thin films were deposited at various $O_2$/Ar gas-flow ratios by a reactive RFmagneton sputtering technique from $TeO_2$ and Te targets. X-ray diffraction (XRD) results revealed that the $TeO_x$ thin films were amorphous. The structure and chemical composition of the $TeO_x$ thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the $TeO_x$ thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the $O_2$/Ar gas-flow ratios, the atomic composition ratio of $TeO_x$ thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing $O_2$/Ar gas-flow ratio, the refractive index of the $TeO_x$ thin films decreased and the optical bandgap of the films increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.22-28
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• 2009

We investigated the sintering and electric properties of ZnO-1.0 at% $TeO_2$ (ZT1) and 1.0 at% Mn-doped ZT1(ZT1M1) system. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ or $Zn_2Te_3O_8$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. In ZT1M1 system, also, the densification of ZnO was retarded up to $1000^{\circ}C$ and then reached > 90% of theoretical density above $1100^{\circ}C$. It was found that a good varistor characteristics(nonlinear coefficient $a{\sim}60$) were developed in ZT1M1 system sintered at $1100^{\circ}C$ due to Mn which known as improving the nonlinearity of ZnO varistors. The results of C-V characteristics such as barrier height (${\Phi}_b$), donor density ($N_D$), depletion layer (W), and interface state density ($N_t$) in ZT1M1 ceramics were $1.8{\times}10^{17}cm^{-3}$, 1.6 V, 93 nm, and $1.7{\times}10^{12}cm^{-2}$, respectively. Also we measured the resistance and capacitance of grain boundaries with temperature using impedance and electric modulus spectroscopy. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots.