• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.128-131
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• 2002

연성 AI 전극을 이용하여 플라스틱 기판 위에 대칭성 박막 다이오드를 제작하였다. 다이오드의 구조는 $Al/Ta_{2}O_{5}/Al$의 3층 구조로 되어 있다 상부 AI 전극 제작시 하부 AI 전극의 손상을 방지하기 위해 무(無)식각 공정을 개발, 적용하였다. AI 전극을 사용한 결과 단단한 Ta 전각에서 나타난 변형 빛 균열 문제가 해결되었다. 또한 상부 빛 하부의 대칭성 전극 구조로 제작함으로써 I-V 곡선이 완벽한 대칭형의 우수한 전기적 특성을 얻을 수 있었다.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• Korean Journal of Materials Research
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• v.6 no.1
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• pp.106-115
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• 1996

본 연구에서는 PET(PentaEthoxy Tanatalum:Ta(OC2H5)5) 유기금속 화합물 전구체를 사용하여 차세대 초고집적회로 제조시 고유전체 물질로 유망한 Ta2O5 박막을 열화학증착 방법에 의하여 증착하였다. 본 증착실험을 통하여 여러 가지 운속기체, 기판온도, 반응압력 등의 공정변수가 층덮힘에 미치는 영향을 고찰하였으며 Monte Carlo 전산모사 결과와 기판온도 변화에 따른 층덮힘 패턴의 변화에 대한 실험결과를 비교하여 부착계수를 산출하였다. 운송기체로는 N2, Ar, He을 바꿔가며 실험하였으며 He>N2>Artns으로 층덮힘이 양호한 것으로 나타났다. 이는 운송기체의 종류에 따라 운동량 확산도, 열 확산도, 물질 확산도 등의 이동현상 특성값들이 다르기 때문이라 생각된다. 기판온도의 증가는 운송기체의 종류에 관계없이 층덮힘을 악화시켰으며 도랑내부에서의 Knudsen 확산과 표면반응물의 탈착에 비해 표면반응이 보다 지배적인 역할을 담당함을 알 수 있었다. 또한 질소를 운송기체로 사용한 경우에 부착계수의 겉보기 활성화 에너지는 15.9Kcal/mol로 나타났다. 그리고 3Torr 이하에서 반응압력이 증가하는 반응압력이 증가하는 경우에는 물질 확산도의 감소 효과 때문에 층덮힘이 악화되었다. 본 연구결과 3Torr, 35$0^{\circ}C$에서 He 운송기체를 이용한 경우가 가장 우수한 층덮힘을 얻을 수 있는 최적 공정 조건임을 알 수 있었다.

• Korean Journal of Optics and Photonics
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• v.33 no.1
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• pp.22-27
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• 2022

We fabricate a polarization-independent dielectric multilayer thin-film diffraction grating for a spectral-beam-combining (SBC) system with a simple grating structure and low aspect ratio. Due to the refractive index and thickness error of the manufactured thin films, the diffraction efficiency of the fabricated diffraction grating was lower than that of the design. The causes of the errors were analyzed, and it was confirmed through simulation that diffraction efficiency could be compensated through an additional coating on the manufactured diffraction grating. As a result of sputtering an additional Ta₂O₅ layer on a fabricated diffraction grating, the diffraction efficiency was corrected and a maximum 91.7% of polarization-independent diffraction efficiency was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.73-74
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• 2006

Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.452-460
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• 2007

Ultra-low loss ZERODUR and fused silica mirrors were manufactured and their light scattering characteristics were investigated. For this purpose, ZERODUR and fused silica substrates were super-polished by the bowl feed method. The surface roughness were 0.292 ${\AA}$ and 0.326 ${\AA}$ in rms for ZERODUR and fused silica, respectively. To obtain the high reflectivity, 22 thin film layers of $SiO_2$ and $Ta_2O_5$ were deposited by Ion Beam Sputtering. The measured light scattering of ZERODUR and fused silica mirror were 30.9 ppm and 4.6 ppm, respectively. This shows that the substrate surface roughness is not the only parameter which determines the light scattering of the mirror. In order to investigate the mechanism for additional light scattering of the ZERODUR mirror, the surface roughness of the mirror was measured by AFM and was found to be 2.3 times higher than that of the fused silica mirror. It is believed that there is some mismatch at the interface between the substrate and the first thin film layer which leads to the increased mirror surface roughness. To clarify this, the contact angle measurements were performed by SEO 300A, based on the Giriflaco-Good-Fowkes-Young method. The fused silica substrates with 0.46 ${\AA}$ in its physical surface roughness shows lower contact angle than that of the ZERODUR substrate with 0.31 ${\AA}$. This indicates that the thin film surface roughness is determined by not only its surface roughness but also the surface energy of the substrate, which depends on the chemical composition or crystalline orientation of the materials. The surface energy of each substrate was calculated from a contact angle measurement, and it shows that the higher the surface energy of the substrate, the better the surface roughness of the thin film.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.331-337
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• 2003

This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.