• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.928-930
• /
• 1992

The design beam energy of PLS(Pohang Accelerator Laboratory) Linac is 2Gev. The linac employs total 11 units of modulators and klystrons. The maximum peak output powers of the modulators are 200MW (400kV, 500A, 4.4$\mu$S flat-top, 800$\Omega$ load) to drive the klystrons which have the peak microwave power of 80MW. Prior to the development of the 200MW modulators, a prototype 150MW modulator has been constructed and tested. We have achieved output pulses of 350kV, 420A and 3.5$\mu$S flat-top with 840$\Omega$ water load. In this article, the test results and computer simulations of charging, De-Q'ing, and discharging are presented.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.11 no.3
• /
• pp.172-178
• /
• 1986

The recent interest in the design of filters is motivatied by the fact that such filter can be fully integrated using standard metal-oxide-semiconductor processing technology. This is due to replacing all the resistors in the active RC filter network by the switched capacitors. The voltage gain of a SC filter depends only on the rations of capacitance and these ratios can be obtained and maintained to high accuracy. Therefore, it is known that a switched capacitor is much better than a resistor in temperature and linearity characteristics. This paper proposed a programmable SC filter and proved the fact that ${omega}_0$ Q and G of this circuit can be controlled by digital signal. Experiments show that SC filter remains the low sensitivities but it can't avoid little influence of parasitic capacitance. As the transfer characteristic of the SC filter is varied with sampling frequency and resistor array, SC filtering technigue can be applied for digital processing, speech analysis and synthesis and so on.

• Journal of Sensor Science and Technology
• /
• v.4 no.2
• /
• pp.51-57
• /
• 1995

Indium Tin Oxide (ITO) thin films have been fabricated by the rf magnetron sputtering technique with a target of a mixture $In_{2}O_{3}$ (90mol%) and $SnO_{2}$ (10mol%). We prepared ITO thin films with substrate temperature 100, 200, 300, 400, $500^{\circ}C$ and post-annealing temperature 300, 400, $500^{\circ}C$. And we analyzed X -ray diffraction patterns, electrical properties, transmission spectra and SEM photographs. As a result, the crystallinity, electrical conductivity and transmittance of ITO thin films were improved with increasing substrate temperature. But, as increasing post-annealing temperature in air, conductivity of the film was decreased. When the ITO thin film was fabricated with substrate temperature of $500^{\circ}C$ and thickness of $3000{\AA}$, its resistivity and transmittance were about $2{\times}10^{-4}{\Omega}cm$ and 85% or more, respectively.

• Journal of the Korean Mathematical Society
• /
• v.54 no.5
• /
• pp.1483-1504
• /
• 2017

We consider weak solutions of the instationary Navier-Stokes system in a smooth bounded domain ${\Omega}{\subset}{\mathbb{R}}^3$ with initial value $u_0{\in}L^2_{\sigma}({\Omega})$. It is known that a weak solution is a local strong solution in the sense of Serrin if $u_0$ satisfies the optimal initial value condition $u_0{\in}B^{-1+3/q}_{q,s_q}$ with Serrin exponents $s_q$ > 2, q > 3 such that ${\frac{2}{s_q}}+{\frac{3}{q}}=1$. This result has recently been generalized by the authors to weighted Serrin conditions such that u is contained in the weighted Serrin class ${{\int}_0^T}({\tau}^{\alpha}{\parallel}u({\tau}){\parallel}_q)^s$ $d{\tau}$ < ${\infty}$ with ${\frac{2}{s}}+{\frac{3}{q}}=1-2{\alpha}$, 0 < ${\alpha}$ < ${\frac{1}{2}}$. This regularity is guaranteed if and only if $u_0$ is contained in the Besov space $B^{-1+3/q}_{q,s}$. In this article we consider the limit case of initial values in the Besov space $B^{-1+3/q}_{q,{\infty}}$ and in its subspace ${{\circ}\atop{B}}^{-1+3/q}_{q,{\infty}}$ based on the continuous interpolation functor. Special emphasis is put on questions of uniqueness within the class of weak solutions.

• Journal of Sensor Science and Technology
• /
• v.24 no.1
• /
• pp.15-21
• /
• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Journal of the Korean Magnetics Society
• /
• v.11 no.5
• /
• pp.222-225
• /
• 2001

The planar type inductors have a good potential for the application of miniaturized low power DC-DC converters. For those high quality application, the reduction of coil loss and also magnetic films which have good high frequency properties are required. Fabricated inductor was consisted of FeTaN/Ti magnetic film and electroplated Cu coil thickness of 100$\mu\textrm{m}$ and $SiO_2$ as a insulating layer. The inductor was designed double rectangular spiral shape for magnetic field highly confining within the device. The measured value of inductance and resistance were 980 nH and 1.7 $\Omega$ at 1 MHz as operating frequency of device. The Q factor is 3.55 at 1 MHz.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.1
• /
• pp.63-69
• /
• 2000

The high-$T_c$ Superconducting (HTS) antenna which consists of "H" type resonator has the benefits for the miniaturization of antenna in comparison with the microstrip antenna of the similar dimension. To fabricate the "H" type antenna, HTS $YBa_2Cu_3O_{7-x}$ (YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. Standard etching processes were performed for the patterning of the "H" type antenna. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between $50{\Omega}$ feed line and HTS radiating patch. The diverse experimental results were reported in terms of the resonant frequency, the return loss and the characteristics impedance. The "H" type superconducting antenna showed the performance of 1.36 in SWR, 24% in efficiency, and 14.6 dB in the return loss superior of the normal conducting counterpart.

• Advances in materials Research
• /
• v.5 no.2
• /
• pp.93-105
• /
• 2016

KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.35 no.6
• /
• pp.686-695
• /
• 2002

Samples of Corbicula ( Corbicula) japonica Prime of Namdae Stream in Gangnung were collected from November 2000 to October 2001. Age of C. (C.) japonica was determined from the rings on the shell, The shell length of the samples ranged from 8 mm to 38 mm. The ring on the shell was formed once a year in March. Von Bertalanffy's growth parameters were estimated using a nonlinear regression method, asyinptotie shell length ($L_{\omega}$) was 48,98 mm, K was 0.20421year, theoretical age at 0 shell length $(t_0)$ was 0.3169 year, and asymptotic total weight ($W_{\omega}$) was 41.37 g. The formula of allomeky between shell length (L, mm) and total weight (W, g) of the brackish water clam was W=3.42$\times$10^{-4}L^{3}. The annual survival rate was estimated at 0.3799, instantaneous coefficient of natural mortality was 0.5007/year, and instantaneous coefficient of fishing mortality was 0.46721year. The age at first capture was estimated at 2.1593 year using shell length compositions of the brackish water clam, The current yield-per-recruit at 0.4672/year of fishing mortality was 0.6595 g. F_0.1 was estimated at 0.1865/year, Acceptable biological catch was estimated at 14.4 metric ton.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.322-322
• /
• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.