• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.274-280
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• 1998

Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.11-14
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various $Ar/O_2$ ratio. We investigated the effect of deposition condition(specially $Ar/O_2$ ratio) on the structural properties of SBN thin film. As $Ar/O_2$ ratio was increased, the peaks in the XRD pattern became more sharp. Also, the peaks(008)(115)(220) in 80/20 of $Ar/O_2$ ratio were suddenly appeared. The optimum of the rougness showed about 4.33 nm in 70/30 of $Ar/O_2$ ratio. The crystallinity of SBN thin films were increased with the increase of $Ar/O_2$ ratio. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70/30 of $Ar/O_2$ ratio. The capacitance of SBN thin films were increased with the increase of $Ar/O_2$ ratio.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.19-25
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• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.867-872
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• 2012

In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric actuators application, $Li_{0.04}(Na_{0.50}K_{0.50})_{0.96}[(Nb_{0.86}Ta_{0.10}Sb_{0.04})_{0.994}Co_{0.015}]O_3+0.0025SrO+0.15\;wt%K_2CO_3+x\;wt%Nb_2O_5$ (x = 0 - 0.5 wt%) (abbreviated as LNKNTSCS-xN) ceramics were fabricated by a conventional sintering technique. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the $Nb_2O_5$ content. High electrical properties of $d_{33}$=234 pC/N, kp=0.392, ${\varepsilon}_r$=1,395, ${\rho}=4.70g/cm^3$ were obtained from the specimen with x=0.4 wt%, which suggests that the composition ceramics is a promising lead-free piezoelectric material.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Journal of the Korean earth science society
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• v.27 no.1
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• pp.49-60
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• 2006

The purpose of this study is to investigate geochemical characteristics for stream sediments in the Naju area. We collected 139 stream sediments samples from primary channels. Samples were dried slowly in the laboratory and chemical analysis was carried out using XRF. ICP-AES and NAA. In order to investigate geochemical characteristics, the geological groups categorized into granitic gneiss area, schist area, granite area, arenaceous rock area, tuff area, andesite area, and rhyolite area. Average contents of major elements for geological groups are $SiO_2\;58.37{\sim}66.06wt.%,\;Al_2O_3\;13.98{\sim}18.41wt.%,\;Fe_2O_3\;4.09{\sim}6.10wt.%,\;CaO\;0.54{\sim}1.33wt.%,\;MgO\;0.86{\sim}1.34wt.%,\;K_2O\;2.38{\sim}4.01wt.%,\;Na_2O\;0.90{\sim}1.32wt.%,\;TiO_2\;0.82{\sim}1.03wt.%,\;MnO\;0.09{\sim}0.15wt.%,\;P_2O_5\;0.11{\sim}0.18wt.%$. According to the comparison of average contents of major elements, $Al_2O_3\;and\;K_2O$ are higher in granitic gneiss area, $Fe_2O_3,\;CaO,\;P_2O_5$ are higher in tuff area, MgO and $TiO_2$ are higher in andesite area, $Na_2O_$ is higher in rhyolite area, $SiO_2$, and MnO are higher in arenaceous rock area. Average contents of minor and rare earth elements for geological groups are $Ba\;1278{\sim}1469ppm,\;Be\;1.1{\sim}1.5ppm,\;Cu\;18{\sim}25ppm,\;Nb\;25{\sim}37ppm,\;Ni\;16{\sim}25ppm,\;Pb\;21{\sim}28ppm,\;Sr\;83{\sim}155ppm,\;V\;64{\sim}98ppm,\;Zr\;83{\sim}146ppm,\;Li\;32{\sim}45ppm,\;Co\;7.2{\sim}12.7ppm,\;Cr\;37{\sim}76ppm,\;Cs\;4.8{\sim}9.1ppm,\;Hf\;7.5{\sim}25ppm,\;Rb\;88{\sim}178ppm,\;Sc\;7.7{\sim}12.6ppm,\;Zn\;83{\sim}143ppm,\;Pa\;11.3{\sim}37ppm,\;Ce\;69{\sim}206ppm,\;Eu\;1.1{\sim}1.5ppm,\;Yb\;1.8{\sim}4.4ppm$. According to the comparison of average contents of minor and rare earth elements for geological groups, Pb, Li, Cs, Hf, Rb, Sb, Pa, Ce, Eu, and Yb are higher in granitic gneiss area; Ba, Co, and Cr in schist area; Nb, Ni, and Zr in arenaceous rock area; Sr in tuff area: and Be, Cu, V, Sc, and Zn are such in andesite area.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.4
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• pp.307-324
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• 2020

Major and trace elements, and Sr, Nd, isotopic composition analysis have been carried out on the Miocene basalt (Huangsongpu basalt, 20 Ma) 25 km to northeast from the Mt. Baekdu. The basalt has Na2O+K2O=3.5~4.7 wt.%, and MgO=9.9~11.1 wt.%, containing Mg-rich olivine (Mg#=75~86), clinopyroxene (Mg#=72~85) and Ca-rich plagioclase micro-phenocrysts. These data suggest that the basalt belongs to the alkaline magma series with a primitive nature, crystallized at a near-liquidus. The basalt is also characterized by high Cr (394~479 ppm) and Ni (389~519 ppm) contents, Nb-Ta enrichment anomalies and OIB-like trace elements patterns, displaying identical signatures to those of typical intraplate magmas. The rare earth element (REE) patterns of the basalt and high (Gd/Yb)sample/(Gd/Yb)PM ratio (=2.8~3.5) suggest the parental magma was derived from relatively low-degree (3~5%) partial melting of garnet peridotite. The 143Nd/144Nd and 87Sr/86Sr composition of the basalt are higher than those of BSE. The high 87Sr/86Sr (= ~0.7058) ratio of the basalt indicates a contribution of recycled ancient oceanic crust or continental crust on the Pacific slab suggesting that the Huangsongpu basalt was generated from metasomatized mantle.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.