• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Korean Chemical Engineering Research
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• v.44 no.6
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• pp.609-613
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• 2006

Ba2-xSrxSiO4:Eu2+ phosphor particles with the high photoluminescence (PL) intensity under long wavelength ultraviolet (UV) were prepared by spray pyrolysis. The photoluminescence, morphological and crystalline characteristics of $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles prepared by spray pyrolysis were investigated. $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles prepared by spray pyrolysis had various colors from bluish green to yellow by changing the ratio of barium and strontium of the host material. In case of x=0, the main emission peak of $Ba_2SiO_4:Eu^{2+}$ phosphor was 500 nm. In case of x=2, the main emission peak of $Sr_2SiO_4:Eu^{2+}$ phosphor was 554nm. $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles obtained by spray pyrolysis had spherical shape and hollow structure. On the other hand, the post-treated $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles had large size and irregular shape. The $Ba_{1.488}Sr_{0.5}SiO_4:Eu_{0.012}{^{2+}}$ phosphor particles had the maximum PL intensity after post-treatment at temperature of $1300^{\circ}C$ for 3h under reduction atmosphere.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.727-731
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• 2013

In this study, green barium strontium silicate phosphor ($BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$) was synthesized using a solid-state reaction method in air and reducing atmosphere. Investigation of the firing temperature indicates that a single phase of $BaSrSiO_4$ is formed when the firing temperature is higher than $1400^{\circ}C$. The effect of firing temperature and doping concentration on luminescent properties are investigated. The light-emitting property was the best when the molar content of $Eu_2O_3$ was 0.025 mol. Also, the luminescent brightness of the $BaSrSiO_4$ fluorescent substance was the best when the particle size of the barium was $0.5{\mu}m$. $BaSrSiO_4$ phosphors exhibit the typical green luminescent properties of $Eu^{3+}$ and $Eu^{2+}$. The characteristics of the synthesized $BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$ phosphor were investigated using X-ray diffraction (XRD) and scanning electron microscopy. The maximum emission band of the $BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$ was 520 nm.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.105-110
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• 2012

In this paper, a yellow phosphor $Sr_3SiO_5:Eu^{2+}$ that emits efficiently at the 450 nm excitation for warm white LED is studied. In addition, the effects of various flux $BaF_2$, $NH_4Cl$ on the emission spectra were investigated. The samples were synthesized through conventional solid state reaction under reducing atmosphere of 95% $N_2$-5% $H_2$ mixture at the high temperature. All phosphors showed a excitation band from 450 nm and broad band emission peaking at region of 580 nm. The optimal concentration of $BaF_2$ flux is 3 wt% for $Sr_3SiO_5$ with doping 0.05mol Eu phosphors fired in a reductive atmosphere. The phosphor showed highest emission peaking at 582 nm.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• Korean Chemical Engineering Research
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• v.44 no.3
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• pp.284-288
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• 2006

$(Ca,Sr)_{2-y}MgSi_2O_7:Eu^{2+}{_y}$ (CMS) phosphor particles were prepared by using a spray pyrolysis process. The luminescent property was optimized by changing the content of Eu and the post-treatment temperature. The luminescence characteristics were also monitored with changing the ratio of Ca to Sr. The pure tetragonal $Ca_2MgSi_2O_7$ or $Sr_2MgSi_2O_7$ particles were obtained when the post-treatment temperature was over $1,000^{\circ}C$. The highest emission intensity of CMS particles were achieved when the concentration (y) of Eu and the treatment temperature were 0.05 and $1,250^{\circ}C$,respectively. The emission wavelength $({\lambda}_{max})$ of ${(Ca_{1-x},Sr_x)}_{1.95}MgSi_2O_7:{Eu^{2+}}_{0.05}$ was gradually shifted from 524 nm to 456 nm with increasing the content of Sr due to the reduction of crystal field strength. The emission intensity and its width of $Sr_2MgSi_2O_7:Eu$ was greatly enhanced by substituting Ca of less than 10 mol％ for Sr without any significant peak shift. The morphology of as-prepared particles was spherical, but changed to irregular-shaped one after the post treatment at the temperature range from 900 at $1,300^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.192-197
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• 2014

Red-emitting nitride phosphors recently attracted considerable attention because of their high thermal stability and high color rendering index properties. For excellent phosphor of white light-emitting-diode, ternary nitride phosphor of $Sr/SmSi_5N_8:Eu^{2+}$ with different $Eu^{2+}$ ion concentration were synthesized by solid state reaction method. In this work, red-emitting nitride $Sr/SmSi_5N_8:Eu^{2+}$ phosphor was successfully synthesized by using multi-step high frequency induction heat treatment. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Sr/SmSi_5N_8:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Sr/SmSi_5N_8:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 300 - 550 nm, namely from UV to visible area with distinct enhanced emission peaks. With an increase of $Eu^{2+}$ ion concentration, the peak position of emission in spectra was red-shifted from 613 to 671 nm. After via multi-step heat treatment, prepared phosphor showed excellent luminescence properties, such as high emission intensity and low thermal quenching, better than commercial phosphor of $Y_3Al_5O_{12}:Ce^{3+}$. Using $Eu_2O_3$ as a raw material for $Eu^{2+}$ dopant with nitrogen gas flowing instead of using commercial EuN chemical for $Sr/SmSi_5N_8:Eu^{2+}$ synthesis is one of characteristic of this work.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.676-678
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• 2004

In order to develop new yellow phosphor that emit efficiently under the 450 - 470 nm excitation range, we have synthesized a $Eu^{2+}$-activated $Sr_3SiO_5$ yellow phosphor and investigated an attempt to develop white LEDs by combining it with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the $Sr_3SiO_5$:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based $Sr_3SiO_5$:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.430-431
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• 2009

In this study, europium doped strontium silicate ($Sr_2SiO_4:Eu^{2+}$) phosphor has been synthesized by conventional solid-state method and investigated luminescent characteristic. $SrCO_3$ and $SiO_2$ were mixed together by 2:1 mole ratio. Also $NH_4Cl$ was added as a flux. The mixture were sintered at $800^{\circ}C$, $1000^{\circ}C$ for 3h under the atmosphere (5% $H_2$/95% $N_2$). This phosphor can be applicated to the yellow phosphor for white LED because it has yellow emission band (540nm), which emits efficiently under the 370nm excitaion energy.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.41-45
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• 2012

Oxynitride green phosphors for white light emitting diodes (LEDs) were synthesized and their optical properties were evaluated. The N/O ratio ($\delta$) of $SrSi_2O_{2-{\delta}}N_{2+2/3{\delta}}:Eu^{2+}$ closely depended on the synthesizing conditions. The most excellent green emission (545 nm), which was assigned to the $5d{\rightarrow}4f$ transition of $Eu^{2+}$ ions, was achieved at the conditions of $1700^{\circ}C$, 5 mol% $Eu^{2+}$, and $H_2$ atmosphere. The well-developed $Ca-{\alpha}-SiAlON:Yb^{2+}$ particles with homogeneous size were obtained at m = 3 (n = 0.15) for the compound of $Ca_{0.5m-0.005}Yb_{0.005}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$, resulting in the strong green emission at around 550 nm.