• Korean Journal of Crystallography
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• v.11 no.2
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• pp.95-101
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• 2000

Ferroelectric SrBi2Ta2O9 (SBT) thin films of Pt/Ti/SiO2 electrode were fabricated using a sintered SBT target with various Bi2O3 content by rf magnetron sputtering. Good hysteresis loop characteristics were observed in the SBT thin films deposited with 50mol% excess Bi target. SBT thin films crystallized from 650℃ however, good hysteresis loop can be obtained in the film annealed above 700℃. pt/TiO2/SiO2 and Pt/SiO2 electrodes were also used to investigate the Pt electrode dependence of SBT thin films. SBT thin films showed random oriented polycrystalline structure and similar morphology regardless of electrodes with quite different surface morphology. A 0.2㎛ thick SBT film annealed at 750℃ exhibited the remanent polarization (2Pr) of μC/㎠ and coercive voltage(Vc) of 1V at an applied voltage of 5V.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.143-150
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• 2000

Ferroelectric SrxBi2+yTa2O9+$\alpha$ thin films with various compositions(x=0.7, 0.8, 1, y=0.3, 0.4) were prepared by sol-gel method. The film with moled ratio of 0.8:2.3:2.0 in Sr/Bi/Ta, which was deposited on Pt/SiO2/Si (100), showed better ferroelectric properties than other films. To investigate substrate effects, the same compositions were spin coated on Pt/Ti/SiO2/Si (100) substrates. At an applied voltage of 5V, the dielectric constant($\varepsilon$r), remanent polarization (2Pr) and coercive field (Ec) of the Sr0.8Bi2.3Ta2O9+$\alpha$ thin film prepared on Pt/Ti/SiO2/Si (100) were about 296, 24$\mu$C/$\textrm{cm}^2$ and Ec of 49kV/cm respectively. Both SBT films firred at 80$0^{\circ}C$ revealed no fatigue up to 1010 cycles. Retention characteristics of these capacitors showed no degradation up to 104 sec.

• 한국지구과학회:학술대회논문집
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• 2005.09a
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• pp.136-141
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• 2005

The K Ar ages, whole rock geochemistry and Sr Nd Pb isotopes have been determined for the submarine basalts dredged from the P2 and P3 segments of the Antarctic-Phoenix Ridge (APR), Drake Passage, Antarctica, for better understanding on temporal variation of magma chemistry in association with extinction of seafloor spreading. The fossilized APR is distant from the known hot spots, and consists of older N-MORB prior to extinction of spreading and younger E-MORB after extinction. The older N-MORB (3.5-6.4 Ma) occur in the southeast flank of the P3 segment (PR3) and the younger E-MORB (1.4-3.1 Ma) comprise a huge seamount at the P3 segment (SPR) and a big volcanic edifice at the P2 segment (PR2). The N-type PR3 basalts have higher Mg#, K/Ba, and CaO/Al2O3 and lower Zr/Y, Sr, and Na8.0 with slight enrichment in incompatible elements and almost flat REE patterns. The E-type SPR and PR2 basalts are highly enriched in incompatible elements and LREE. The extinction of spreading occurring at 3.3 Ma seems to have led to a temporal magma oversupply with E-MORB signatures. Geochemical signatures such as Ba/TiO2, Ba/La, and Sm/La suggest heterogeneity of upper mantle and formation of E-MORB by higher contribution of enriched materials to mantle melting, compared to N-MORB environment. E-MORB magmas beneath the APR seem to have been produced by low melting degree (up to 1% or more) at deeper low-temperature regime, where metasomatized veins consisting of pyroxenites have preferentially participated in the melting. The occurrence of E-MORB at the APR is a good example to better understand what kinds of magmatism would occur in association with extinction of spreading.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.280-280
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• 2007

$Pb(Zr,Ti)O_3$ (PZT) 강유전체 박막은 높은 잔류 분극 (remanent polarization) 특성 때문에 현재 강유전체 메모리 (FeRAM) 소자에 적용하기 위하여 가장 활발히 연구되고 있다. 그런데 PZT 물질은 피로 (fatigue) 및 임프린트 (imprint) 등의 장시간 신뢰성 (long-term reliability) 특성이 취약한 단점을 가지고 있다. 이러한 신뢰성 문제를 해결할 수 있는 효과적인 방법 중의 하나는 $IrO_2$, $SrRuO_3$(SRO) 등의 산화물 전극을 사용하는 것이다. 많은 산화물 전극 중에서 SRO는 PZT와 비슷한 pseudo-perovskite 결정구조를 갖고 격자 상수도 비슷하여, PZT 커패시터의 강유전 특성 및 신뢰성을 향상시키는데 매우 효과적인 것으로 알려져 있다. 따라서 본 연구는 PZT 커패시터에 적용하기 위하여 SRO 박막을 증착하고 이의 전기적 특성 및 미세구조를 분석하고자 하였다. 또 실제로 SRO 박막을 상부전극과 PZT 사이의 버퍼 층 (buffer layer)으로 적용한 경우의 커패시터 특성도 평가하였다. 먼저 다결정 SRO 박막을 $SiO_2$/Si 기판 위에 DC 마그네트론 스퍼터링 법 (DC magnetron sputtering method)으로 증착하였다. 그 다음 이러한 SRO 박막의 미세구조, 결정성 및 전기적 특성이 증착 조건들의 변화에 따라서 어떤 경향성을 보이는지를 평가하였다. 기판 온도는 $350\;{\sim}\;650^{\circ}C$ 범위에서 변화시켰고, 증착 파워는 500 ~ 800 W 범위에서 변화시켰다. 또 Ar+$O_2$ 혼합 가스에서 산소의 혼합 비율을 20 ~ 50% 범위에서 변화시켰다. 이러한 실험 결과 SRO 박막의 전기적 특성 및 미세 구조는 기판의 증착 온도에 따라서 가장 민감하게 변함을 관찰할 수 있었다. 다른 증착 조건과 무관하게 $450^{\circ}C$ 이상의 온도에서 증착된 SRO 박막은 모두 주상정 구조 (columnar structure)를 형성하며 (110) 방향성을 강하게 나타내었다. 가장 낮은 전기 저항은 $550^{\circ}C$ 증착 온도에서 얻을 수 있었는데, 그 값은 약 $440\;{\mu}{\Omega}{\cdot}cm$ 이었다. SRO 버퍼 충을 적용하여 제작한 PZT 커패시터의 잔류 분극 (Pr) 값은 약 $30\;{\mu}C/cm^2$ 정도로 매우 높은 값을 나타내었고, 피로 손실 (fatigue loss)도 $1{\times}10^{11}$ 스위칭 사이클 후에 약 11% 정도로 매우 양호한 값을 나타내었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.57.1-57.1
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• 2009

나노이산화티타늄은 인체에는 화장품, 의약, 식품분야 등에 쓰이고 외부 환경 재료에는 광촉매로서 유독가스 정화제, 옥내 외 항균, 수소발생 가시광 응답형 촉매 및 멤브레인 필터 등과 전자소재용 유전재료, 발광 재료 등 용도가 다양하다. 나노 산화티타늄 화합물의 제조법은 수열합성법, 기상법 등 여러 방법이 있다. 이들에 대한 리뷰의 목적은 2009년도 정부의 투자 계획 중에서 본제목에 관련되는 핵심 산업 재원 원천기술 개발, 태양광, 풍력 등의 신재생 에너지 개발, 록색 기술 개발을 통한 에너지절약형 LED 개발, 차세대 핵심환경 기술 개발, 핵심나노기반기술개발 등의 개발을 위하여 4,363억 원의 예산을 편성하고 연구자와 기술자들이 참여하여 유익한 실적이 창출되기를 원하고 있으므로 본 발표자들은 이 분야에서 연구하는 연구자와 기술자들에게 이 분야에 관련되는 자료를 참고로 제시하는데 있다. 페로브스카이트형 산화물인 유전재료($BaTiO_3$), 발광재료(CaTiO3:Pr3+적색), 박막형 반응기재료($Ca0.8Sr0.2TiO_3$), 등의 여러 가지 산화물은 류통식 급속 승온 수열 합성법, 겔 졸 법, 수열 합성법 등 여러 방법에 의하여 페로브스카이트형 산화물 입자 직경이 약 20nm~100nm 범위까지 합성된다. 태양광을 조사하여 물을분해 해서 수소를 생산하는 산화티타늄계 가시광 응답형 Vis-$TiO_2$ 박막은 기상법으로 제조하는데 한 예로써 RF 스퍼터링법으로 박막을 제조하여 수소와 산소를 회수하였으며, 황도프산화티타늄, 질소 도프 산화티타늄은 유기물 분해에 의한 공해제거, $NO_x$ 제거 등 환경정화에 사용되고, 고온 고압수법/산화티타늄 복합기술에 의해서는 바이오매스 분해 하고, 일종의 수열법인 개량형 HyCOM 법은 가시광 응답성 산화티타늄을 합성하여 NO가스 제거에 사용한다. 이들 여러 방법에 관한 것을 소개하고저 한다.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.93-98
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• 2011

We successfully grew $La_{0.35}Pr_{0.35}Ca_{0.3}MnO_3$(LPCMO)/$LaAlO_3$(LAO) thin film using Laser Molecular-Beam Epitaxy and studied post-growth annealing effects ($750^{\circ}C$, 5 h) on its crystal structural and magnetic properties. Whereas the single-layered LPCMO and LPCMO/STO superlattice thin films show rough surface before and after the post-growth annealing, LPCMO/LAO superlattice shows a relatively very flat surface even after the post-growth annealing. The enhancement of ferromagnetism of LPCMO/LAO superlattice after the post-growth annealing was remarkable compared to the single-layered LPCMO thin film. The coercive and saturation magnetic field of the single-layed LPCMO thin film were decreased after the post-annealing. However, for LPCMO/LAO superlattice, a same coercive and increased saturation magnetic field were exhibited after post-growth annealing. We suggest that these peculiar observations are originate from the super-structure of LPCMO and LAO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.