• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1139-1142
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• 1999

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.226-231
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• 2001

The $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1250^{\circ}C{\sim}1350^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_3$ and ilmenite $MgTiO_3$ structures were coexisted in the $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics. The dielectric constant( ${\epsilon}_r$) was increased with addition of $SrTiO_3$. The temperature coefficient of resonant frequency( ${\tau}_f$) was gradually varied from negative value to the positive value with increasing the $SrTiO_3$. The temperature coefficient of resonant frequency of the $Mg_{1-x}Sr_xTiO_3(x=0.036)$ ceramics was near zero, where the dielectric constant, quality factor, and ${\tau}_f$ were 20.65, 95120 and +1.3ppm/$^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.421-426
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• 2006

[ $(BaSr)TiO_3$ ] thick films were prepared by tape casting method, using $BaTiO_3\;and\;SrTiO_3$ powder slurry in order to investigate dielectric properties i.e. dielectric constant, ${\varepsilon}_r$, Curie temperature, $T_c$. Grain growth within $(BaSr)TiO_3$ thick films was observed with increasing weight ratio of $BaTiO_3$. This observation can be explained by phenomena of substitution of $Sr^{2+}$ ion for $Bi^{2+}$ ion in the $BaTiO_3$ system. Also, the Curie temperature in $(BaSr)TiO_3$ thick films was shifted to lower temperature range with increasing $ SrTiO_3$. Furthermore, Curie temperature having maximum dielectric constant was in the range of $-40^{\circ}C\;to\;30^{\circ}C$, and hence sharper phase transformation occurred at Curie temperature. There occurred decrease in tunability and k-factor of $(Ba_{0.6}Sr_{0.4})TiO_3$ calculated from the dielectric constant, ${\varepsilon}_r$ above Curie temperature. In addition, above the $60^{\circ}C$, phase fixation was observed. This means that internal stress relief occurred with increasing $90^{\circ}$ domains.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.11-19
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• 1992

$SrTiO_3$powders were synthesized from the chloride and the nitrate aqueous solution by spray pyrolysis method using ultrasonic vibrator. The concentration of mother solution was prepared 0.05M and O.lM. The carrier gas flow rate was 0.5cm/sec and 1.5cm/sec, respectively. The formation processing was investigated in the 0.05M and 0.05cm/sec. The $SrTiO_3$powders could not be synthesized from chloride aqueous solution. The prepared powders from nitrate aqueous solution was SrTi03 with cubic structure and nearly sphere particle for all samples. Mean particle size was increased from $0.49{\mu}m$ to $0.67{\mu}m$ by changing the carrier gas flow rate from O.5cm/sec to 1.5cm/sec. Also, mean particle size increased from $0.49{\mu}m$to $0.55{\mu}m$by changing the concentration of mother solution from O.05M to O.1M. Atomizing droplet size was $14.3{\mu}m$. The shape of particles was very porous by evaporation of solvent at the initial step. But through the each step upwards, shape of particles was formed themselves into a nearly roundish.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.286-291
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• 1998

$SrTiO_3$[ST] thin films were fabricated on $RuO_2$bottom electrodes by RF magnetron sputtering with various $Ar/O_2$ratio in sputtering gas. As the content of oxygen increases, the leakage current of ST films measured at $10^5$ V/cm decreases from $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$ to $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$, and the dielectric constant of ST films increases from $70(Ar/O_2=10/0)$ to $190(Ar/O_2=5/5)$. The improvement of electrical properties of ST films is mainly due to the structural modification of ST films such as better crystallinity, smooth surface morphology with the increase of oxygen content in the sputtering gas.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

• Journal of the Korean Ceramic Society
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• v.20 no.2
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• pp.107-114
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• 1983

Formation of Strontium titanate from the products of coprecipitation takes place at 110$0^{\circ}C$ which is 200-30$0^{\circ}C$ lower than that from mechanical mixtures of $SrCO_3$ and $TiO_2$. This is apparently due to the nature of the compounds formed by the reaction of mixtures of aqueous solutions of $SrCl_2$ and $TiCl_4$ with an ammoniacal solution of ammoni-um carbonate and ammonium hydroxide. A procedure is described for preparing strontium titanyl oxalate tetrahydrate in the several mole ratio of $TiCl_4$ to $SrCl_2$. STrontium titanyl oxalates decompose to titanate at elevated temperature. The coprecipitates and the fired specimen were subjected to examined thermal and X-ray analyses and microstruc-ture by SEM.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1150-1158
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• 2000

반도성 SrTiO$_3$분말을 이용하여 상압에서 제조된 소결체의 소결 분위기에 따른 소결체 입계의 결함 화학 및 전기적 특성을 고찰하였다. 소결 분위기를 질소-수소, 질소, 공기로 변화시킴에 따라서 입계에서 O/(Sr+Ti)의 비는 1.6로부터 2.1로 증가하였으며, 또한 입계의 과잉 음전하층에서 전하 밀도는 1C/$ extrm{cm}^2$로부터 1.26C/$\textrm{cm}^2$로 증가하였다. 소결체의 문턱 전압, 입계 저항 그리고 입계 전위 장벽은 소결 분위기를 질소-수소로부터 공기로 변화시킴에 따라 6.40-1000 V/cm, 2.70-3050 kΩ 그리고 0.08-10.9 eV로 각각 증가하였다.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.297-304
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• 1989

The dielectric properties of SrTiO3 GBL Capacitor have been investigaetd as a function of the second heat treatment time and the amount of Ta. The grain size of semiconductive SrTiO3 after sintering at 1,46$0^{\circ}C$ for 4 hours in N2/H2 atmosphere increased as the amount of Ta increased, and then decreased as the amount of Ta exceed 0.01 mole. Also, the dielectric constant after the second heat treatment showed the same tendency. When the semiconductive SrTiO2 was second heat treated at 1,10$0^{\circ}C$ in air with varying time, the dielectric constant increased as the second heat treatment time increased up to 60 minutes, and then decreased as the time became longer than 60 minutes.