• 대한전자공학회논문지SD
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• 제37권11호
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ 박막은 ULSI-DRAM 즉 1-4 Gbit급 DRAM용 셀(cell) 커패시터의 새로운 유전물질로 각광받고 있다. 본 연구에서는 ICP 장비에서 $BCl_3/Cl_2/Ar$ 플라즈마로 (Ba,Sr)$TiO_3$ 박막을 식각하였다. 이때 RF power/dc bias voltage는 600W/-250V, 반응로의 압력은 10mTorr 이었다. $Cl_2/(Cl_2+Ar)$은 0.2로 고정하였고, $BCl_3$ 가스를 첨가하면서 (Ba,Sr)$TiO_3$ 박막을 식각하였다. $BCl_3$ 가스를 10% 첨가하였을 때, $480{\AA}/min$으로 (Ba,Sr)$TiO_3$ 박막은 가장 높은 식각 속도를 나타내었다. $Cl_2/Ar$가스에 $BCl_3$의 첨가 비에 따른 Cl, BCl 및 B의 라디칼 밀도를 optical emission spectroscopy(OES)에 의해 구하였다. $BCl_3$를 10% 첨가하였을 때 Cl의 라디칼 밀도가 가장 높았다. (Ba,Sr)$TiO_3$ 박막의 표면반응을 규명하기 위하여 XPS 분석을 수행한 결과 이온 bombardment 식각이 Ba-O 결합을 파괴하고 Ba와 Cl의 결합형태인 $BaCl_2$을 제거하기 위하여 필요하다. Sr과 Cl의 결합의 양은 많지 않고, Sr은 주로 물리적인 스퍼터링에 의하여 제거된다. Ti와 Cl은 화학적으로 반응하여 $TiCl_4$ 결합형태로 용이하게 제거된다. 식각후 단면사진을 SEM을 통해 본 결과 식각단면이 약 65~70$^{\circ}$ 정도였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권7호
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• pp.344-348
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• 2006

The effect of x on microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics for microwave components were investigated. All spcecimens prepared by the conventional mixed oxied method and sintered at $1450^{\circ}C$. Microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-xTiO_2$ ceramics were influenced by $MgTi_2O_5$ phase. Also the microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were dominated with an addition of $CaTiO_3\;and\;SrTiO_3$. The dielectric constant $(\varepsilon_r)$, quality factor $(Q{\times}f_r)$ and temperature coefficient of the resonant frequency $(TCRF,\;\tau_f)$ of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were $12.96\sim70.98,\;5,132\sim186,410GHZ$ and $-35.82\sim+75.96ppm/^{\circ}C$, respectively, and depend on x and addition materials.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.94-96
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• 2002

The $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature. the grain size was increased. In the case of $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $13.52{\sim}18.13,\;32750{\sim}51736GHz$, $-15.78{\sim}25.64ppm/^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.843-846
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• 2000

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.02∼0.08) ceramics were fabricated by conventional mixed oxide method. The sintering temperature and time were 1250$^{\circ}C$∼1400$^{\circ}C$, 2hr., respectively. The structural and microwave dielectric properties were investigated by varying sintering temperature and composition ratio. In the (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.02) ceramics, the cubic SrTiO$_3$and hexagonal MgTiO$_3$phases were coexisted. The dielectric constant was increased and the temperature coefficient of resonant frequency( $\tau_f$) was decreased with addition of SrTiO$_3$. The temperature coefficient of resonant frequency($\tau_f$) was gradually varied from negative value to positive value with increasing the SrTiO$_3$.

• 한국재료학회지
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• 제11권3호
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• pp.203-206
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• 2001

SrTiO$_3$첨가량 및 소결온도에 따른 YIG 소결체의 미세구조 및 자기적 특성변화에 대하여 조사하였다. 소량의 SrTiO$_3$소결재를 첨가한 결과 소결체의 격자상수는 약간 증가하였으며, 이는 소결시 $Y^{+3}$, Fe$^{+3}$이온이 이온반경이 상대적으로 큰 Sr$^{+2}$, Ti$^{+4}$이온으로 치환되었기 때문인 것으로 추정된다. SrTiO$_3$소결재를 0.2mo1% 첨가하고, 142$0^{\circ}C$에서 소결한 소결체의 밀도는 이론밀도의 98%이상의 치밀화를 얻을 수 있었다. 상온에서의 포화자화값(M$_s$)은 SrTiO$_3$소결재의 첨가량이 증가함에 따라 약간 감소하였으나 큰 변화는 없었다. 더욱이 온도에 따른 보자력 (H$_c$)의 변화는 없었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.547-550
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• 2000

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~135$0^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures coexisted in the (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased with addition of SrTiO$_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to the positive value with increasing the SrTiO$_3$. The negative temperature coefficient of resonant frequency of the magnesium titanate was adjusted to near zero at x=0.036, where the dielectric constant, quality factor, and $\tau$$_{f}$ were 20.65, 95120, and +1.3ppm/$^{\circ}C$, respectively. The temperature stability of qualify factor in (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics increased as the amount of MgTiO$_3$./TEX>.

• 한국재료학회지
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• 제18권7호
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• pp.389-393
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• 2008

Nano-sized $TiO_2$-60 wt% SrO composite powders were synthesized by a sol-gel method using titanium isopropoxide and $Sr(OH)_2\;{\cdot}\;8H_2O$ as precursors. 3, -5, -7 wt%Ag spot-coated $TiO_2$-60 wt% SrO composite powders were synthesized by a Ag electroless deposition method using $TiO_2$-60 wt% SrO composite powders calcined at $1050^{\circ}C$, which mainly exhibited the $SrTiO_3$phase. However, a small number of rutile $TiO_2$, $Sr_2TiO_4$ and $SrO_2$ phases were also detected. In the Ag spot-coated powders synthesized by electroless deposition, nano-sized particles about 5-25 nm in diameter adhered to the $TiO_2$-60 wt% SrO composite powders. The photocatalytic activity of Ag spot-coated $TiO_2$-SrO and $TiO_2$-SrO composite powders for degradation of phenol showed that all of $TiO_2$-SrO composite powders were highly active under UV light irradiation. 7 wt%Ag spot-coated $TiO_2$-60wt.%SrO composite powders had a relatively higher photocatalytic activity than did $TiO_2$-SrO composite powders under visible light.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.674-681
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• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• 한국분말재료학회지
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• 제18권1호
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• pp.41-48
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• 2011

As a pore precursor, carbon black with different content of 0 to 60 vol% were added to (Ba,Sr)$TiO_3$ powder. Porous (Ba,Sr)$TiO_3$ ceramics were prepared by pressureless sintering at $1350^{\circ}C$ for 1h under air. Effects of carbon black content on the microstructure and PTCR characteristics of porous (Ba,Sr)$TiO_3$ ceramics were investigated. The porosity of porous (Ba,Sr)$TiO_3$ ceramics increased from 6.97% to 18.22% and the grain size slightly decreased from $7.51\;{\mu}m$ to $5.96\;{\mu}m$ with increasing carbon black contents. PTCR jump of the (Ba,Sr)$TiO_3$ ceramics prepared by adding carbon black was more than $10^5$, and slightly increased with increasing carbon black. The PTCR jump in the (Ba,Sr)$TiO_3$ ceramics prepared by adding 40 vol% carbon black showed an excellent value of $9.68{\times}10^5$, which was above two times higher than that in (Ba,Sr)$TiO_3$ ceramics. These results correspond with Heywang model for the explanation of PTCR effect in (Ba,Sr)$TiO_3$ ceramics. It was considered that carbon black is an effective additive for preparing porous $BaTiO_3$ based ceramics. It is believed that newly prepared (Ba,Sr)$TiO_3$ cermics can be used for PTC thermistor.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.1019-1023
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• 2008

Photoluminescence properties of $SrTiO_3$:Sm red phosphors synthesized by solid state reaction method were studied under 254 nm excitation. Emission bands at 576 nm and 616 nm in heavily $Sm^{3+}$ ion doped $SrTiO_3$:Sm phosphors were observed, which were attributed to $^4G_{5/2}\rightarrow{^6}H_{5/2}$ and $^4G_{5/2}\rightarrow{^6}H_{7/2}$ transition of $Sm^{3+}$, respectively. The $Sm^{3+}$ ion concentration exhibiting the maximum emission intensity in the $SrTiO_3$:Sm was 30 mol%. The luminescence caused by $Sm^{3+}$ in the $SrTiO_3$:Sm phosphors was interpreted by the energy transfer between $Sm^{3+}$ ions.