• 한국세라믹학회지
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• 제43권11호
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2002년도 제33차 춘계학술대회
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• pp.57-60
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• 2002

• 분석과학
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• 제13권3호
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• pp.309-314
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• 2000

리튬 용융염($LiC+Li_2O$) 내에 미량으로 존재하는 핵분열생성물을 유도결합 플라스마 원자방출분광기(ICP-AES)를 이용하여 분석하였다. 분석대상 원소 중 감도가 가장 좋은 파장을 선택해 이들 파장에서 리튬 500, 1,000, 2,000 mg/L에 따른 분광학적 간섭 여부를 확인한 결과, 분석원소중 0.1 mg/L 이하의 Y, Nd, Sr, La, Eu의 방출세기는 리튬의 농도가 2,000 mg/L까지 증가시켜도 분광학적 간섭을 받지 않은 반면, Mo, Ba, Ru, Pd, Rh, Zr, Ce는 10% 에서 50% 이상 분광학적 간섭과 매트릭스에 의한 스펙트럼 방해가 나타났다. 리튬 매질로부터 미량 금속원소들을 군분리하기 위하여 모의 용융염 용액을 조제해 암모니아수를 가한 후 분리하고 다시 산처리하여 얻은 용액을 ICP-AES로 회수율을 측정하였다. 분석원소 중 Ru, Y, Rh, Zr, Nd, Ce, La, Eu의 회수율은 90% 이상인 반면 Mo, Ba, Pd, Sr는 낮은 회수율을 보여주었으며, 가해준 암모니아수 양이 증가할수록 회수율이 증가하는 경향을 보였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.100-100
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• 2009

$TiO_2$ is widely being used as a semiconductor electrode for DSSC. Anti-recombination property and surface area of $TiO_2$ give an important influence to the DSSC efficiency. In this study, $TiO_2$ electrode was fabricated on FTO using screen printing method. Various overlayers were coated on them by dip coating in solution of saturated $Ba(NO_3)_2$, $Mg(NO_3)_2$ and $N_{2}O_{6}Sr$. They reduced the recombination of electrons from photo excited state of Ru dye. The atmospheric plasma treatment was applied to both the $TiO_2$ and each overlayer coated $TiO_2$ surfaces to improve contact ability with dye. We prepared four samples, one sample has bare $TiO_2$ surfaces to improve contact ability with dye. We prepared four samples, one sample has bare $TiO_2$ electrode and the other samples consist of each overlayer coated $TiO_2$ electrodes. We used XRD, FE-SEM, J-V, IPCE and EIS in order to investigate characteristic.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.133-133
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• 2003

최근에 강유전체 매체와 원자력 현미경 (Atomic Force Microscopy, AFM)을 이용한 초고밀도 정보 저장 장치에 대한 연구가 활발히 진행되고 있다. 이와 아울러 나도 크기의 도메인에 대하 연구에 있어서 PZT 박막의 분극 방향에 따른 SrRuO$_3$의 저항 변화를 AFM 탐침을 이용하여 감지하는 방법을 제안하였다. 본 연구에서는 Metal tip/semiconductor/barrier oxide/ferroelectric 구조에서 강유전체 분극에 의한 저항 변화의 가능성을 실험하고자, 이와 등가 구조인 Pt tip/n-Si/SiO$_2$ 구조에서 Pt 탐침과 반도체 층 사이의 I-V 특성을 측정함으로써, 게이트 전압에 따른 반도체 층의 저항변화에 대해서 분석해 보았다. 그 결과 게이트 전압에 따라서 과밀 지역 (accumulation layer)과 공핍 지역 (depletion layer)이 형성됨에 따라서 반도체 층의 정항이 변하여 I-V 특성이 변하게 됨을 관찰하였으며, 이 결과로부터 분극 방향에 따라서도 반도체 층의 저항이 변할 수 있음을 알 수 있었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2012년도 자성 및 자성재료 국제학술대회
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• pp.29-30
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• 2012

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2012년도 임시총회 및 하계학술연구발표회
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.123.1-123.1
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• 2008

• Nuclear Engineering and Technology
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• 제41권3호
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• pp.319-326
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• 2009

This study was carried out to investigate the high-acidity co-separation of Am and RE from a simulated radwaste solution by a solvent extraction using a mixture of Dimethyldibutyltetradecylmalonamide (DMDBTDMA, as an extractant) and dihexyl octanamide (DHOA, as a phase modifier) diluted with n-dodecane (NDD). All the experiments were conducted as a batch type. First, the environmentally friendly DMDBTDMA and DHOA composed of only CHON atoms were self-synthesized. Then, the conditions for the prevention of a third phase, generated in the organic phase were examined. In addition, the effects of the concentration of nitric acid, DHOA, oxalic acid and $H_2O_2$ on the co-extraction of Am and RE were elucidated. Consequently, the optimum condition of (0.5M DMDBTDMA+0.5M DHOA)/NDD-0.3M $C_2H_2O_4-4.5M$ $HNO_3$ and O/A=2 was obtained through experimental work. Under this condition, the extraction yields were found to be about 80% for Am, more than 70% for RE such as La, Eu, Nd, Ce, etc., 3% for Cs and Sr, 69% for Fe and less than 11% for Mo and Ru. For the co-extraction of Am and RE, Fe should be removed in advance or prevented from a co-extraction with Am by controlling the different extraction rates of Am and Fe. About 95% of the Am and RE in the organic phase were stripped using a 0.5M $HNO_3$.

• Nuclear Engineering and Technology
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• 제55권4호
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• pp.1300-1309
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• 2023

Simulated debris was synthesized using UO₂, Zr, and stainless steel and a heat treatment method under inert or oxidizing conditions. The primary U solid phase of the debris synthesized at 1473 K under inert conditions was UO₂, whereas a (U, Zr)O₂ solid solution formed at 1873 K. Under oxidizing conditions, a mixture of U₃O₈ and (Fe, Cr)UO₄ phases formed at 1473 K, whereas a (U, Zr)O_2+x solid solution formed at 1873 K. The leaching behavior of the fission products from the simulated debris was evaluated using two methods: the irradiation method, for which fission products were produced via neutron irradiation, and the doping method, for which trace amounts of non-radioactive elements were doped into the debris. The dissolution behavior of U depended on the properties of the debris and aqueous solution for immersion. Cs, Sr, and Ba leached out regardless of the primary solid phases. The leaching of high-valence Eu and Ru ions was suppressed, possibly owing to their solid-solution reaction with or incorporation into the uranium compounds of the simulated debris.