• 한국초전도학회:학술대회논문집
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• v.9
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• pp.161-164
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• 1999

We have fabricated the direct-coupled planar type 1st-order SQUID gradiometers. The gradiometer consists of moats or slots in SQUID loop. It is made by YBa$_2Cu_3O_7$ thin films using pulsed laser deposition method on SrTiO$_3$ single crystal and bi-crystal substrates. We have studied the effects of slots and moats in SQUID loop by measuring the voltage modulation signals under uniform field and 1st-order gradient, and the noise properties under non-shielded environment.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.70-70
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• 2003

• Superconductivity and Cryogenics
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• v.1 no.2
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• pp.14-20
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• 1999

초전도 재료는 선재의 형태로 가공하면 송전선이나 변압기, 발전기 그리고 전력 저장장치 등에 사용되어 전력계통의 효율을 극대화시킬 수 있는 재료로서 실제 응용 기기의 개발을 위해 많은 연구가 수행되고 있다. 더우기 1980년대 후반에 개발된 고온초전도 산화물 재료는 액체질수의 비등점인 77K 이상에서 초전도현상을 나타내어 초전도 현상의 응용에 대한 기대를 고조시켜 이에 대한 연구를 더욱 활성화시키고 있다. 초전도선재 연구는 그간 PIT(Powder in Tube) 공정을 이용한 Ag/Bi-2223(Ag/$Bi_2Sr_2Ca_2Cu_3O$) 선재가 높은 전기적 성질과 장선 가공상의 잇점으로 인해 많은 연구와 성과가 있었다. 그러나 Ag/Bi-2223선재는 강한 자기장 하에서 통전 능력이 현저하게 저하되는 성질 때문에 높은 자기장하에서 사용하기 위해서는 사용온도를 액체질소온도보다 상당히 낮은 20K 부근까지 낮추어야 한다는 점 때문에 전력기기 개발에 제한이 따르는 단점이 있다. 이에 반해 최근에 개발된 금속/YBCO 박막 복합선재는 높은 전기적 특성 이외에 특히 높은 자장에서도 통전 능력의 저하가 적어 제한 없이 전력기기의 모든 분야에 사용할 수 있는 특징이 있다. 따라서 1993년에 일본에서 Ni 금속기판에 물리적 증착방법으로 YBCO($YiBa_2Cu_3O$) 박막을 증착시킨 선재제조에 성공하고 있어 1996년에 Oak Ridge National Laboratories (ORNL)에서 Rolling Assisted Biaxially Textured Substrate (RaBiTS) 라는 집합조직을 형성시킨 금속기판이 개발되어 연속적인 가공의 가능성이 확인된 후 이의 특성향상 및 가공기술 개발을 위한 많은 연구가 수행되고 이다. 이 글에서는 이제 까지 개발된 금속기판을 사용한 YBCO계 초전도 박막형 선재의 제조기술 중에서 최근 가장 가능성 있는 것으로 평가되는 RABiTS 방법을 위주로 그 외에 IBAD와 ISD 방법에 관하여 소개하고 현재까지의 개발현황 및 앞으로의 전망에 대하여 간략하게 기술하고자 한다.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.430-436
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• 1996

We have grown superconducting thin films on various substrates using a pulsed laser deposition (PLD) method. $YBa_2Cu_3O_7-\delta$ (YBCO) superconducting thin films with the superconducting transition temperature ($T_{c. offset}$) of 87K were grown on Si substrates using yittria-stabilized zirconia (YSZ) and $CeO_2$ double buffer layers. We have developed a large area pulsed laser deposition system. The system was designed to deposit up to 6 different materials on a large area substrate up to 7.5cm in diameter without breaking a vacuum. The preliminary runs of the deposition of YBCO superconducting thin films on $SrTiO_3$ substrate using this system showed a very uniform thickness profile over the entire substrate holder area. $T_{c}$ of the deposited YBCO thin film, however, was scattered depending on the position and the highest value was 85K.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.508-508
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• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.97-100
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• 2000

Si$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.327-330
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• 2001

Phase intergrowth in BSCCO thin films have been investigated. It turned out from XRD analyses of these phases that molar fraction of each constituent phase in the intergrowth thin film can be exhibited as a function of substrate temperature and ozone pressure. Superconducting behavior of the intergrowth thin film is also discussed.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.10-13
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• 1999

For large scale applications of high temperature superconductor(HTS) such as transmission cables, motors and generators, long length of flexible HTS conductors is required. Currently, HTS tape that is capable of being fabricated in long length by industrial processes is the Bi-2223 HTS tape. In this study, we fabricated 19 filamentary Bi-2223($Bi_{1.8}$$Pb_{0.4}$$Sr_{2}$$Ca_{2}$$Cu_{3}$$O_{10+X}$) HTS tape with 100m length by PIT(Powder In Tube) process. Critical current(Ic) of this long length tape was measured 18.5 A at 77 K, self field and short sample Ic is 32.5 A at the same condition. Critical current of 100m length tape was decreased by about 1/3 compared to that of short tape. This was mainly resulted from the increase of non homogeneity in oxide layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.736-741
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• 2002

Phase intergrowth some kinds of the $Bi_2Sr_2Ca_{n-1}Cu_nO_y$ phases is observed in the thin film fabrication at ultralow co-deposition with multi targets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.490-493
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• 2002

Phase intergrowth some kinds of the Bi$_2$Sr$_2$Ca$\_$n-1/Cu$\_$n/O$\_$y/ phases is observed in the thin film fabrication at ultralow co-deposition with multi targets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis.