• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.998-1001
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• 2004

ZnO, $SnO_2$ 타겟 각각의 RF 파워를 50 W, 38 W로 고정시킨 후 combinatorial RF magnetron sputtering법을 사용하여 기판 위치에 따라서 조성 구배를 주어 여러 가지 조성의 Zn-Sn-O(ZTO) 박막을 제작하였다. 시편의 열처리에 따른 물성 변화를 분석하기 위해 Rapid Thermal Annealer(RTA)을 이용하여 450, $650{^\circ}C$의 온도 및 $10^{-2}$ Ton의 진공 분위기에서 각각 1 시간 동안 열처리하였다. XRD 분석 결과 상온에서 제작된 ZTO 박막은 Sn 18 at%의 조성을 갖는 시편을 제외하고 모두 비정질상으로 나타났다. $450^{\circ}C$에서 열처리 후 구조적인 변화는 보이지 않았으나, 캐리어 농도와 이동도는 증가하였으며 Sn 54 at%의 조성에서 최고 $25.4cm^2/Vsec$의 전자 이동도를 나타내었다. $26{\leq}Sn$ $at%{\leq}65$의 조성 범위를 갖는 박막은 가시광 영역에서 80 % 이상의 투과도를 가졌으며 $650^{\circ}C$에서 결정화가 되면서 투과도가 증가하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.84-85
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• 1994

• Journal of the Korean Society for Heat Treatment
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• v.29 no.3
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• pp.109-112
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• 2016

We have considered the influence of electron irradiation on the optical and electrical properties of $SnO_2$ thin films deposited with reactive RF magnetron sputtering. After deposition, the films electron irradiated at 300 eV shows a lower sheet resistance of $277{\Omega}/{\square}$ and the optical transmittance in a visible wave length region also influenced with the electron irradiation energy. The film that electron irradiated at 400 eV shows a higher optical transmittance of 82.6% in this study. By comparison of figure of merit, it is concluded that the post-deposition electron irradiation at 300 eV is the optimum condition for the enhancement of opto-electrcal performance of $SnO_2$ thin film in this study.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1779-1781
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• 2000

Pd doped $SnO_2$ thin film sensors were prepared on alumina substrate by rf magnetron sputtering method. The sensitivity of thin film was investigated by varying the heat-treatment temperature, film thickness and gas species. The thin film heat-treated at 600$^{\circ}C$ and film thickness of 5000${\AA}$ showed the highest sensitivity at an operating temperature of 400$^{\circ}C$.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.224-228
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• 2004

Respectively the powder made of ZnO added $SnO_2$ was prepared by coprecipitation method and the thick film gas sensor was fabricated by screen-printing technique, The morphology and phase of the powder and film was investigated by SEM and XRD. The specific area of the particle was linearly increased with ZnO contents. Target gas was di(propylene glycol) methylether ($CH_3$($OC_3$$H_{6}$ )$_2$OH, DPGME), which is simulant gas of blister gas. The gas sensing characteristics for DPGME were examined with flow type measurement system and the concentrations of target gas were controlled from 500 ppb to 1500 ppb. ZnO (2 wt%) added $SnO_2$ showed maximum sensitivity to DPGME at $300^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.13-18
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• 2006

[ $SnO_2$ ] and ZnO nanostructures were grown on the surface of thin film by heat treatment of metal Sn, Zn under Ar gas flow and $O_2$ at atmospheric pressure, respectively. The sensitivity of the $SnO_2$ thin film device on which grown nanowires to CO gas(5,000 ppm) was 50 % at the operating temperature of $200^{\circ}C$. In case of using Pt as catalysts, the sensitivity was enhanced and operating temperature was reduced(73 % at $150^{\circ}C$ ). The sensitivity of the ZnO nanorods device using Cu as catalysts to NOx gas was 90 % at the operating temperature of $200^{\circ}C$. It was found that the sensitivity to CO and NOx gases for the device on which grown nanostructures was much higher than those for general thin film device.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.839-847
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• 1996

• Solar Energy
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• v.18 no.2
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• pp.137-144
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• 1998

Tin oxide films deposited by spray pyrolysis have defects and preferred orientations according to the temperature of substrate. The growth of crystalline deposits began at the substrate temperature of $300^{\circ}C$. With increasing substrate temperature the plane (200) groved preferentially and above $400^{\circ}C$, planes of higher indices. Grain size increased with increasing substrate temperature up to $400^{\circ}C$. Undoped film is composed of Sn and O, and contains oxygen vacancies. Film doped with antimony has defects such as oxygen vacancies, antimony substituted on Sn and chlorine on oxygen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.917-923
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• 2005

In this paper, effect of catalytic configuration on the sensing properties of $SnO_2$ nanoparticle gas sensitive thick film was investigated. Two types of catalytic configuration, mono and binary, were made on the $SnO_2$ nanoparticle. In case of mono catalytic system, $3 wt\%$ Pd or Pt catalyst was doped onto the $SnO_2$ nanoparticle, respectively. In case of binary catalytic system, Pd and Pt was doped simultaneously with concentration ratio of 1:2 to 2:1 onto the $SnO_2$ nanoparticle. After doping, gas sensitive thick film was printed on alumina substrate and heat-treated at 450 to $600^{\circ}C$. Gas sensing properties was evaluated using 500 to 10,000 ppm $CH_4$ gas. As a result, gas sensitive thick film with binary catalytic system showed unstable phenomena that the gas sensitivity was changed according to aging time. In contrary, the mono catalytic system showed relatively stable phenomena despite of aging time. Especially, gas sensitive thick film doped with $3 wt\%$ Pt catalyst and heat-treated at $500^{\circ}C$ showed good sensing properties such as 0.57 of $R_{3500}/R_{1000}$ and very small variation within $3.5\%$ after aging for 5 hours, and response time was very short less than 20 seconds.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.283.1-283.1
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• 2016

Tin Oxide(SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. It would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. In addition, SnO2 is commonly used as gas sensors. To fabricate high quality epitaxial SnO2 thin films, a powder sputtering method was used, in contrast to typical sputtering technique with sintered target. Single crystalline sapphire(0001) substrates were used. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurements. We found that the strain evolution of the samples was highly affected by gas environment and growth rate, resulted in the delamination under O2 environment.