• Nano
• /
• v.13 no.11
• /
• pp.1850130.1-1850130.12
• /
• 2018

A novel strontium titanate/binary metal sulfide ($SrTiO_3/SnCoS_4$) heterostructure was synthesized by a simple two-step hydrothermal method. The visible-light-driven photocatalytic performance of $SrTiO_3/SnCoS_4$ composites was evaluated in the degradation of methyl orange (MO) under visible light irradiation. The photocatalytic performance of $SrTiO_3/SnCoS_4-5%$ is much higher than that of pure $SrTiO_3$, $SnCoS_4$, $SrTiO_3/SnS_2$ and $SrTiO_3/CoS_2$. The $SrTiO_3/SnCoS_4$ composite material with 5 wt.% of $SnCoS_4$ showed the highest photocatalytic efficiency for MO degradation, and the degradation rate could reach 95% after 140 min irradiation time. The enhanced photocatalytic activity was ascribed to not only the improvement of visible light absorption efficiency, but also the construction of a heterostructure which make it possible to effectively separate photoexcited electrons and holes in the two-phase interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.05a
• /
• pp.27-30
• /
• 2006

In this paper, the undoped and Co-doped $Zn_4SnSe_6$ single crystals grown by the chemical transporting reaction(CTR) method using iodine as a transporting agent are investigated. For the crystal growth, the temperature gradient of the CTR furnace was kept at $680^{\circ}C$ for the source zone and at $780^{\circ}C$ for the growth zone for 7days. It was found from the analysis of x-ray diffraction that the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ compounds have a monoclinic structure. The direct optical energy band gap of the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ single crystals at 300K were found to be 2.146eV and 2.042eV.

• Korean Journal of Materials Research
• /
• v.20 no.8
• /
• pp.408-411
• /
• 2010

Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.

• Journal of the Korean Ceramic Society
• /
• v.38 no.3
• /
• pp.287-292
• /
• 2001

본 실험은 목적은 CRT(Cathode Ray Tube)용 청색 형광체인 ZnS:Ag 분말 표면에 액상법으로 SnO$_2$를 균일하게 코팅하는 공정조건을 연구하는 것이다. 용매로서 물을 사용하고, Sn의 공급물질로서 SnCl$_4$.4$H_2O$, 침전 촉매로서 CO(NH$_2$)$_2$를 각각 사용하여, 균일 침전 방법으로 ZnS:Ag 분말표면에 SnO$_2$를 코팅할 수 있었다. 초기에 첨가되는 SnCl$_4$.4$H_2O$의 량이 Sn/Zn의 몰비기준으로 0.017인 경우에 ZnS:Ag 분말표면에 Sn(OH)$_4$가 균일하게 코팅되지만, 그 이상 첨가되면 과량의 Sn(OH)$_4$가 입자들 사이에 응집되었다. 코팅된 Sn(OH)$_4$는 비정질 구조로 규명되었으며, 이를 SnO$_2$결정상으로 전이시키기 위하여 300~$700^{\circ}C$ 범위 내에서 열처리를 행하였다. 비정질 Sn(OH)$_4$는 20$0^{\circ}C$이하에서 탈수되었고 45$0^{\circ}C$부터 SnO$_2$로 결정화되기 시작하였다. 순수한 ZnS의 경우, 50$0^{\circ}C$이하에서는 상변화가 없으나, $600^{\circ}C$에서 일부 산화되었으며 $700^{\circ}C$에서는 완전히 ZnO로 산화되므로, ZnS의 산화방지 및 SnO$_2$의 결정화를 동시에 만족하는 최고 열처리온도는 50$0^{\circ}C$로 규명되었다. 그러나 ZnS에 SnO$_2$가 코팅된 시편의 경우에는 $600^{\circ}C$가 되어도 ZnS 상이 거의 산화되지 않았고, $700^{\circ}C$에서도 ZnS와 ZnO 상이 공존한 것으로 보아 SnO$_2$코팅이 ZnS의 산화를 억제하는 것으로 나타났다.

• Korean Journal of Materials Research
• /
• v.7 no.4
• /
• pp.287-294
• /
• 1997

(NdㆍDy)-(FeㆍCoㆍAIㆍM)-B 합금에 Sn,Mo등을 첨가하여 그에 따른 미세구조와 열적안정성 및 자기적 특성 변화를 조사하였다. Sn과 Mo의 첨가는 (NdㆍDy)-(FeㆍCoㆍAIㆍM)-B 합금리본의 큐리온도를 크게 향상시켰으며 자기특성, 특히 보자력을 1KOe이상 증가시켰다. 그리고 이러한 현저한 보자력 증가는 입계형 defect인 disturbed grain boundary defect에 기인하는 것이라 판단되었다. 또한 Sn과 Mo 첨가원소는 irreversible loss를 각각 4%와 6% 감소시켜 리본자석의 열적안정성을 향상시켰다. 이는 Sn과 Mo의 첨가가 보자력을 크게 증가시켰기 때문이다. 한편 (NdㆍDy)-(FeㆍCoㆍAIㆍM)-B 리본자석들의 열저항온도(heat resistance temperature)는 irreversible loss와 직선관계를 이루었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.360.2-360.2
• /
• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.08a
• /
• pp.25-30
• /
• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.375-377
• /
• 1998

The magneto-optical properties of Co/Co$_2$TiSn two-phase magnet films were studied. These films show that relatively large Kerr rotations which are -0.4 deg. at the wavelength of 400 nm, compared to that of pure Co. It is conceivable that the magneto-optical effects may be due to both contributions of ferromagnetic Co matrix and ferromagnetic Co$_2$TiSn Heusler alloy precipitate. The perpendicular magnetization curve domonstrates a typical bubble domain hysteresis loop. the saturation magnetization change of the annealed film is less sensitive to temperature in the low temperature region and the Curie temperature of Co$_2$TiSn Heusler alloy precipitate is a little higher in the annealed film. These can be explained by the increase of the number of Co-Co exchange interaction in Heusler alloy structure resulting from the change of chemical ordering by annealing.

• Journal of Integrative Natural Science
• /
• v.9 no.4
• /
• pp.223-227
• /
• 2016

The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron co-sputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.

• Journal of the Korean Ceramic Society
• /
• v.38 no.12
• /
• pp.1180-1186
• /
• 2001

W $O_3$-Sn $O_2$thin film sensors with approximately 1${\mu}{\textrm}{m}$ in thickness were fabricated by using a high-vacuum resistance-heating evaporator, were annealed at 50$0^{\circ}C$ for 4 hours in air, and then their crystallinities and surface microstructures were analyzed. As results of gas-sensing characteristics to oxidizing gas, N $O_2$, and reducing gas, CO, of 100 ppm, the highest gas sensitivities (S= $R_{gas}$/ $R_{air}$) were the W $O_3$thin-film sensor measured at 25$0^{\circ}C$ for N $O_2$(S≒1000) and the Sn $O_2$thin-film sensor measured at 15$0^{\circ}C$ to 25$0^{\circ}C$ range for CO (S≒0.25), respectively.ely.