• Bulletin of the Korean Chemical Society
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• 제5권1호
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• pp.3-16
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• 1984

The effect of solvent on the dipole moments for (chloromethyl) stannanes has been investigated by applying EHT calculation for the isomers of trigonal bipyramidal Sn(Ⅳ)$Cl_4X$ and $Cl_n$Sn(Ⅳ) $(CH_2Cl)_{4-n}$, octahedral Sn(Ⅳ)$Cl_42X$ and $Cl_nSn$(Ⅳ)$(CH_2Cl)_{4-n}$ 2X type complexes in dioxane and ethylacetate solutions (X: dioxane or ethylacetate). For Sn(Ⅳ)$Cl_4$ in dioxane solution, the calculated dipole moment for the trigonal bipyramidal Sn(Ⅳ)$Cl_4X$ type complex [isomer (b)] is closer to the experimental dipole moment than octahedral Sn(Ⅳ)$Cl_4X$2X type complexes. This calculated dipole moment suggests that Sn(Ⅳ)$Cl_4X$ may have the trigonal bipyramidal structure in dioxane solution. However, the calculated dipole moment for octahedral $Cl_3$Sn(Ⅳ) ($CH_2$Cl)2X type complex [Isomer (d)], ClSn(Ⅳ)(CH2Cl)32X type complex [Isomer(k)] and Cl2Sn(Ⅳ)(CH2Cl)22X type complex [Isomer(h)] are closer to the experimental dipole moments than other isomers for octahedral complexes and trigonal bipyramidal complexes. Such theoretical results indicate that $Cl_3Sn$(Ⅳ )($CH_2Cl$), ClSn(Ⅳ)$(CH_2Cl)_3$ and $Cl2Sn$(Ⅳ)$(CH_2Cl)_2$ complexes may have octahedral structures, Isomer(d), (k) and (h) in ethylacetate solution, respectively.

• 한국세라믹학회지
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• 제27권5호
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• 한국세라믹학회지
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• 제29권12호
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• 마이크로전자및패키징학회지
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• 제18권3호
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• pp.33-37
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• 2011

본 연구에서는 Ag-에폭시계 도전성접착제와 Sn도금 부품의 접합체를 이용하여 고온 고습 분위기($85^{\circ}C$/85%RH) 중에서의 미세조직과 전기저항의 변화를 중심으로 계면열화에 미치는 Cl의 영향을 검토하였다. $85^{\circ}C$/85%RH 분위기에서 전형적인 Cl량이 함유된 Ag-에폭시계 도전성접착제를 사용한 접합체의 전기저항은 Cl 함유량이 적은 접합제를 사용한 접합체에 비해 시간의 경과에 따라 급격히 증가하는 경향을 나타내었다. 그 원인을 밝히기 위해 미세조직을 분석한 결과, 고Cl 접합체의 경우, Sn 산화물과 Sn-Cl-O가 Sn도금/Ag-에폭시계 도전성접착제의 계면에 불균일하게 생성되어 있는 반면, 저Cl 접합체에서는 Sn-Cl-O생성이 관찰되지 않았고, Sn산화물도 비교적 적은 것을 알았다. 이러한 결과들을 통해 Ag-에폭시계 도전성접착제에 함유된 Cl이 Ag-에폭시계 도전성접착제와 Sn도금 부품 접합체의 전기적 열화를 가속시키는 원인 중의 하나임을 알았다.

• 한국결정성장학회지
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• 제4권3호
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• pp.294-305
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• 1994

초음파 분무법에 의한 $SnO_2(:F)$박막의 제막시 DBDA와 $SnCl_4.5H_2O$를 출발물질로 사용하은 경우 제막조건이 전기적, 광학적 그리고 표면형상 드의 특성에 미치는 영향에 대해 조사하였다. 박막의 비저항은 출발물질에 관계없이 용액내의 F/Sn의 비가 0.6일 때까지는 급격히 증가하였으며, $SnO_2.5H_2O$를 출발물질로 사용한 경우 DBDA의 경우보다 낮았다. 용액내의 F/Sn의 비가 1일 때 출발물질로서, $SnO_2.5H_2O$과 DBDA를 사용한 경우 광투과율은 각각 83%와 85%로서 DBDA 사용한 경우가 다소 높았다.

• 마이크로전자및패키징학회지
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• 제24권2호
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• pp.49-53
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• 2017

Cl 불순물 도핑에 따른 $SnSe_2$ 이차원 전자소재의 고온(300~450 K) 전도 물성 변화를 고찰하였다. 고상합성법을 통하여, 도핑이 없는 $SnSe_2$ 소재와 Cl이 도핑된 $SnSe_{1.994}Cl_{0.006}$ 소재를 합성하였으며, X선 회절 실험을 통하여, 두 재료 모두 불순물 없는 단일상이 형성되었음을 확인하였다. 비저항의 온도의존성 측정을 통하여, 전기 전도 mechanism이 Cl 도핑에 의해 hopping 전도에서 축퇴 전도로의 전이가 일어남을 관찰할 수 있었으며, 홀효과 측정을 통해 그러한 전도 mechanism의 전이가, Cl의 효과적인 donor 역할에 따른 자유전자의 농도 증가에서 기인한 것임을 확인하였다. 온도에 따른 전자이동도의 변화 분석을 통하여, 도핑이 없는 $SnSe_2$의 고온 전기 전도는 grain boundary 산란이 지배적인 영향을 미치는 반도체 전도 특성을 보이는 반면, Cl 도핑에 따라 grain boundary 산란 효과가 저하되는 금속 전도 특성을 보인다는 것을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제32권1호
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• pp.213-218
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• 2011

The scope of homogeneous Lewis acid-catalyzed benzo[N,N]-heterocyclic condensation was expanded to include the use of various metal salts not reported in the literature and $SnCl_2{\cdot}2H_2O$ was finally selected. Among various solid supports activated with $SnCl_2$, heterogeneous $SnCl_2/SiO_2$ proved to be the most effective and significantly higher conversions were achieved compared to $SnCl_2{\cdot}2H_2O$ itself. The results of TG-DTA and BET indicated that dispersed $SnCl_2$ coordinates with surface hydroxyl groups of silica leading to formation of stable Lewis acid sites. Low catalyst loading, operational simplicity, practicability and applicability to various substrates render this eco-friendly approach as an interesting alternative to previously applied procedures.

• 한국세라믹학회지
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• 제30권9호
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• pp.740-746
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• 1993

TiO2-SnO2 fine powders prepared by coprecipitation from TiCl4-SnCl4 aqueous solution, and their crystal structures were studied. All the TiO2-SnO2 fine powders calcined at 180~$700^{\circ}C$ showed the complete solid solution between TiO2(rutile structure) and SnO2(rutile structure). This crystal structure of TiO2-SnO2 powders is thought to be originated mainly from the heterogeneous nucleation of Ti-hydroxde on the Sn-hydroxide with coherent structure.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.