• Bulletin of the Korean Chemical Society
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• v.5 no.1
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• pp.3-16
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• 1984

The effect of solvent on the dipole moments for (chloromethyl) stannanes has been investigated by applying EHT calculation for the isomers of trigonal bipyramidal Sn(Ⅳ)$Cl_4X$ and $Cl_n$Sn(Ⅳ) $(CH_2Cl)_{4-n}$, octahedral Sn(Ⅳ)$Cl_42X$ and $Cl_nSn$(Ⅳ)$(CH_2Cl)_{4-n}$ 2X type complexes in dioxane and ethylacetate solutions (X: dioxane or ethylacetate). For Sn(Ⅳ)$Cl_4$ in dioxane solution, the calculated dipole moment for the trigonal bipyramidal Sn(Ⅳ)$Cl_4X$ type complex [isomer (b)] is closer to the experimental dipole moment than octahedral Sn(Ⅳ)$Cl_4X$2X type complexes. This calculated dipole moment suggests that Sn(Ⅳ)$Cl_4X$ may have the trigonal bipyramidal structure in dioxane solution. However, the calculated dipole moment for octahedral $Cl_3$Sn(Ⅳ) ($CH_2$Cl)2X type complex [Isomer (d)], ClSn(Ⅳ)(CH2Cl)32X type complex [Isomer(k)] and Cl2Sn(Ⅳ)(CH2Cl)22X type complex [Isomer(h)] are closer to the experimental dipole moments than other isomers for octahedral complexes and trigonal bipyramidal complexes. Such theoretical results indicate that $Cl_3Sn$(Ⅳ )($CH_2Cl$), ClSn(Ⅳ)$(CH_2Cl)_3$ and $Cl2Sn$(Ⅳ)$(CH_2Cl)_2$ complexes may have octahedral structures, Isomer(d), (k) and (h) in ethylacetate solution, respectively.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.33-37
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• 2011

In this study, the degradation mechanism of mounted chip resistors with Ag-epoxy isotropic conductive adhesives (ICAs) under the humidity exposure ($85^{\circ}C$/85%RH) was examined by electrical resistance change and microstructural study. The effect of the chloride content in Ag-epoxy ICA on joint stability was also examined. The increasing range of the electrical resistance in the typical ICA joint was greater than that in the low Cl content ICA joint. In the case of the typical ICA joint, Sn oxides such as SnO, $SnO_2$, and Sn-Cl-O were formed inhomogeneously on the surface of the Sn plating during the $85^{\circ}C$/85%RH test. In contrast, no Sn-Cl-O was found in the low Cl content ICA joint during the $85^{\circ}C$/85%RH. It is suggested that Cl in Ag-epoxy ICA accelerate the electrical degradation of Sn plated chip components joined with Ag-epoxy ICA.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.294-305
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• 1994

The influence of deposition parameter on the electrical, optical andsurface morphology of $SnO_2(:F)$ films prepared by ultrasonic spray deposition using DBDA and $SnCl_4.5H_2O$ as a source material was studied. Resistivity was decreased sharply with increasing F/Sn ratio in solution up to 0.6. Depending on the source material, $SnCl_4.5H_2O$ shows lower resistivity than DBDA. When F/Sn ratio in solution was 1, optical transmittance was higher DBDA than $SnCl_4.5H_2O$.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.49-53
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• 2017

We study on the change of electrical properties of two-dimensional (2D) $SnSe_2$ materials with respect to Cl doping as $SnSe_{1.994}Cl_{0.006}$ under a high temperature condition. (300~450 K) By the simple solid-state reaction method, non-and Cl-doped 2D $SnSe_2$ materials are successfully synthesized with negligible impurities as confirmed by X-ray diffraction. From the temperature dependence of resistivity, it is observed that the conduction mechanism is changed from hopping to degenerate conduction with Cl doping. By Hall effect measurement, an increase on electron carrier concentration from ${\sim}7{\times}10^{16}$ to ${\sim}3{\times}10^{18}cm^{-3}$ with Cl doping verifies that Cl is an effective electron donor which results in the encouraged carrier concentration. Detailed analysis for temperature dependent Hall mobility reveals that the electrical transports in high temperature regime are governed by the grain boundary-controlled mechanism for non-doped $SnSe_2$, which is effectively suppressed by Cl-doping as entering metallic transport regime.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.213-218
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• 2011

The scope of homogeneous Lewis acid-catalyzed benzo[N,N]-heterocyclic condensation was expanded to include the use of various metal salts not reported in the literature and $SnCl_2{\cdot}2H_2O$ was finally selected. Among various solid supports activated with $SnCl_2$, heterogeneous $SnCl_2/SiO_2$ proved to be the most effective and significantly higher conversions were achieved compared to $SnCl_2{\cdot}2H_2O$ itself. The results of TG-DTA and BET indicated that dispersed $SnCl_2$ coordinates with surface hydroxyl groups of silica leading to formation of stable Lewis acid sites. Low catalyst loading, operational simplicity, practicability and applicability to various substrates render this eco-friendly approach as an interesting alternative to previously applied procedures.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.740-746
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• 1993

TiO2-SnO2 fine powders prepared by coprecipitation from TiCl4-SnCl4 aqueous solution, and their crystal structures were studied. All the TiO2-SnO2 fine powders calcined at 180~$700^{\circ}C$ showed the complete solid solution between TiO2(rutile structure) and SnO2(rutile structure). This crystal structure of TiO2-SnO2 powders is thought to be originated mainly from the heterogeneous nucleation of Ti-hydroxde on the Sn-hydroxide with coherent structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.