• Title/Summary/Keyword: $Si_3 N_4 O_3$

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Evaluation for Grinding Performance of Ceramics (세라믹 재료의 연삭성능 평가)

  • 정을섭;김성청;김태봉;소의열;이근상
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2001.10a
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    • pp.355-359
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    • 2001
  • In this study, experiments were carried out to investigate the characteristics of grinding and wear process of diamond wheel grinding ceramic materials. Normal component of grinding resistance of $AI_2O_3$ was less then that of $Si_3N_4$ and $ZrO_2$. It is because the resistance for grain shedding is less then that for layer formation. For the case of $Si_3N_4$ and $ZrO_2$, as the grain mesh number of wheel increases, the surface roughness decreases. For the case of $AI_2O_3$, the surface roughness does not decreases. For the case of $Si_3N_4$ and $ZrO_2$, grinding is carried out by abrasive wear processes. For the case of $AI_2O_3$, grinding is carried out by grain shedding process.

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Improved Electrical Characteristics of Symmetrical Tunneling Dielectrics Stacked with SiO2 and Si3N4 Layers by Annealing Processes for Non-volatile Memory Applications (비휘발성 메모리를 위한 SiO2와 Si3N4가 대칭적으로 적층된 터널링 절연막의 전기적 특성과 열처리를 통한 특성 개선효과)

  • Kim, Min-Soo;Jung, Myung-Ho;Kim, Kwan-Su;Park, Goon-Ho;Jung, Jong-Wan;Chung, Hong-Bay;Lee, Young-Hie;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.5
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    • pp.386-389
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    • 2009
  • The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.

Corrosive Degradation of MgO/Al2O3-Added Si3N4 Ceramics under a Hydrothermal Condition (MgO/Al2O3가 소결조제로 첨가된 Si3N4 세라믹스의 수열 조건에서의 부식열화 거동)

  • Kim, Weon-Ju;Kang, Seok-Min;Park, Ji-Yeon
    • Korean Journal of Materials Research
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    • v.17 no.7
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    • pp.366-370
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    • 2007
  • Silicon nitride ($Si_3N_4$) ceramics have been considered for various components of nuclear power plants such as the mechanical seal of a reactor coolant pump (RCP), the guide roller for a control rod drive mechanism (CRDM), and a seal support, etc. Corrosion behavior of $Si_3N_4$ ceramics in a high-temperature and high-pressure water must be elucidated before they can be considered as components for nuclear power plants. In this study, the corrosion behaviors of $Si_3N_4$ ceramics containing MgO and $Al_2O_3$ as sintering aids were investigated at a hydrothermal condition ($300^{\circ}C$, 9.0 MPa) in pure water and 35 ppm LiOH solution. The corrosion reactions were controlled by a diffusion of the reactive species and/or products through the corroded layer. The grain-boundary phase was preferentially corroded in pure water whereas the $Si_3N_4$ grain seemed to be corroded at a similar rate to the grain-boundary phase in LiOH solution. Flexural strengths of the $Si_3N_4$ ceramics were significantly degraded due to the corrosion reaction. Results of this study imply that a variation of the sintering aids and/or a control (e.g., crystallization) of the grain-boundary phase are necessary to increase the corrosion resistance of $Si_3N_4$ ceramics in a high-temperature water.

Si3N4/ZrO2 엔지니어드 터널베리어의 메모리 특성에 관한 연구

  • Yu, Hui-Uk;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.155-155
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    • 2012
  • 기존의 플로팅 타입의 비휘발성 메모리 소자는 스케일 법칙에 따른 인접 셀 간의 간섭현상과 높은 동작 전압에 의한 누설전류가 증가하는 문제가 발생을 하게 된다. 이를 해결하고자 SONOS (Si/SiO2/Si3N4/SiO2/Si) 구조를 가지는 전하트랩 타입의 비휘발성 메모리 소자가 제안되었다. 하지만 터널링 베리어의 두께에 따라서 쓰기/지우기 특성은 향상이 되지만 전하 보존특성은 열화가 되는 trad-off 특성을 가지며, 또한 쓰기/지우기 반복 특성에 따라 누설전류가 증가하게 되는 현상을 보인다. 이러한 특성을 향상 시키고자 많은 연구가 진행이 되고 있으며, 특히 엔지니어드 터널베리어에 대한 연구가 주목을 받고 있다. 비휘발성 메모리에 대한 엔지니어드 기술은 각 베리어; 터널, 트랩 그리고 블로킹 층에 대해서 단일 층이 아닌 다층의 베리어를 적층을 하여 유전율, 밴드갭 그리고 두께를 고려하여 말 그대로 엔지니어링 하는 것을 뜻한다. 그 결과 보다 효과적으로 기판으로부터 전자와 홀이 트랩 층으로 주입이 되고, 동시에 다층을 적층하므로 물리적인 두께를 두껍게 형성할 수가 있고 그 결과 전하 보전 특성 또한 우수하게 된다. 본 연구는 터널링 베리어에 대한 엔지니어드 기술로써, Si3N4를 기반으로 하고 높은 유전율과 낮은 뉴설전류 특성을 보이는 ZrO2을 두 번째 층으로 하는 엔지니어드 터널베리어 메모리 소자를 제작 하여 메모리 특성을 확인 하였으며, 또한 Si3N4/ZrO2의 터널베리어의 터널링 특성과 전하 트랩특성을 온도에 따라서 특성 분석을 하였다.

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Fabrication of $Al_2O_3$/SiC Hybrid-Composite ($Al_2O_3$/SiC Hybrid-Composite의 제조)

  • Lee, Su-Yeong;Im, Gyeong-Ho;Jeon, Byeong-Se
    • 연구논문집
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    • s.26
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    • pp.103-112
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    • 1996
  • $Al_2O_3/SiC$ Hybrid-Composite has been fabricated by conventional powder process. The addition of $\alpha-Al_2O_3$ as seed particles in the transformation of $\gamma-Al_2O_3 to $\alpha-Al_2O_3$ provided a homogeneity of the microstructure, resulting in increase of mechanical properties. The grain growth of $Al_2O_3$ are significantly surpressed by the addition of nano-sized. SiC particles, increasing in fracture strength. The addition of SiC plates to $Al_2O_3$ nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC plates with nitrides such as BN and /SiC$Si_3N_4$ enhanced fracture toughness much more than uncoated SiC plates by inducing crack deflection.

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Mechanical Properties of the Pressureless Sintered Si3N4-TiN Ceramic Composities (상압소결 Si3N4-TiN 복합재료의 기계적성질)

  • 송진수;손용배;김종희
    • Journal of the Korean Ceramic Society
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    • v.26 no.3
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    • pp.409-415
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    • 1989
  • Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3+3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.

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UV pumped three color phosphor blend White emitting LEDs

  • Choi, Kyoung-Jae;Park, Joung-Kyu;Kim, Kyung-Nam;Kim, Chang-Hae;Kim, Ho-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1338-1342
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    • 2005
  • We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

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Effect of Mixing Method of Sintering Additives on the Sintered and Mechanical Properties of $Si_3N_4$ (질화규소의 소결 및 기계적 특성에 미치는 소결첨가제 혼합방법의 영향)

  • Kim, Ji-Soon
    • Analytical Science and Technology
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    • v.6 no.2
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    • pp.207-215
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    • 1993
  • $Si_3N_4$ powders were mixed with sintering additives($3Y_2O_3{\cdot}5Al_2O_3$, YAG) by coprecipitation method. Mixing homogeneity, sintered and mechanical properties of coprecipitation-mixed powder compacts were compared with those of mechanically-mixed ones. SIMS-analysis for composition on the surface and in the matrix of prepared powder mixtures showed that the added YAG exists mainly on the $Si_3N_4$ powder surfaces in a form of coating. From this result it could be concluded that coprecipitation method is superior to mechanical mixing in the mixing homogeneity. This mixing homogeneity can accompany an improvement in sintered density, microstructure and consequently the mechanical properties of sintered bodys.

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Effect of Microstructures and Sintering Additives on the Mechanical Properties of Si$_3$N$_4$ (질화규소의 기계적 특성에 미치는 미세구조 및 소결조제의 영향)

  • Park, Hye-Ryeon;Lee, O-Sang;Park, Hui-Dong;Lee, Jae-Do
    • Korean Journal of Materials Research
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    • v.2 no.5
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    • pp.330-336
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    • 1992
  • Four distinctive hot pressed and heat treated S${i_3}{N_4}$ceramics, S${i_3}{N_4}$-8%${Y_2}{O_3}$, S${i_3}{N_4}$-6% ${Y_2}{O_3}$-2% $A{l_2}{O_3}$, S${i_3}{N_4}$-4% ${Y_2}{O_3}$-3% $A{l_2}{O_3}$, 그리고 S${i_3}{N_4}$-1% MgO-1% Si$O_2$(in wt%), were prepared and characterized by X-ray diffraction, scanning electron microscopy, image analysis and mechanical tests. The fracture toughness of S${i_3}{N_4}$-8% ${Y_2}{O_3}$specimens containing large elongated grains showed the highest value of about 9.8MPa$m^{1/2}$. Two out of four S${i_3}{N_4}$, ceramics(S${i_3}{N_4}$-6% ${Y_2}{O_3}$-2% $A{l_2}{O_3}$and S${i_3}{N_4}$-4% ${Y_2}{O_3}$-3% $A{l_2}{O_3}$) heat treated at 200 $0^{\circ}C$retained the fracture strength of over 900MPa and fracture toughness of over 8.0MPa$m^{1/2}$. Large ${\beta}$-S${i_3}{N_4}$grains having a diameter larger than 1${\mu}$m appeared to contribute to increase in fracture toughness.

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