• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.825-833
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• 1997

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.832-838
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• 1995

The densifying behavior of ultrafine amorphous Si3N4 (about 20 nm)-$\beta$-SiC (about 40~80 nm) powders (O2 : 1.3~15wt%, 0$700^{\circ}C$ within 15 sec and then immediately cooled and held at 135$0^{\circ}C$ for 10 min in N2 atmosphere without resorting to additives using a Xe image heating apparatus. Using an ultrafine pure Si3N4 powder with particle size less than 30nm, further more, mixed with an appropriate amount of $\beta$-SiC, was found to be advantageous to obtain uniform and homogeneous microstructure. In addition, ultrafine Si3N4 powders were also proved to be effective as sintering additive on densifying large sized Si3N4 powder compacts.

• Resources Recycling
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• v.20 no.3
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• pp.55-61
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• 2011

In order to develop economical production process from metallurgical grade silicon(MG-Si) to solar grade(SOG-Si), removal of boron by slag treatment was investigated at 1823 K using CaO-$SiO_2$ based slags. In the present study boron removal ratio in CaO-$SiO_2$ stags and $CaCO_3-SiO_2$ slags were increased to 63% and 73% respectively with slag basicity (%CaO/$%SiO_2$). However, bubbling time with Ar gas of slag and metal was not affected on removal ratio of boron. The addition of $Na_2CO_3$ to CaO-$SiO_2$ slags did not improve the removal ratio of boron from molten silicon. Boron contend was decreased from 20.6 ppm to 1.03 ppm by three times treatment using $CaCO_3-SiO_2$ slag (basicity=1.2).

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.457-461
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Journal of Korea Foundry Society
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• v.33 no.3
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• pp.103-112
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• 2013

Effect of Fe and Mn contents on the tensile properties of Al-4 wt%Mg-0.9 wt%Si alloy system has been studied. Common phases of Al-4 wt%Mg-0.9 wt%Si alloy system were ${\alpha}$-Al, $Mg_2Si$, ${\alpha}-Al_{12}(Fe,Mn)_3Si$ and ${\beta}-Al_5FeSi$. As Fe content of Al-4 wt%Mg-0.9 wt%Si alloy system increased from 0.15 wt% to above 0.3 wt%, ${\beta}-Al_5FeSi$ compound appeared. When Mn content of the alloy increased from 0.3 wt% to 0.5 wt%, morphology of plate shaped ${\beta}-Al_5FeSi$ compound changed to chinese script ${\alpha}-Al_{12}(Fe,Mn)_3Si$. As Fe content of Al-4 wt%Mg-0.9 wt%Si-0.3 wt%Mn alloy increased from 0.15 wt% to 0.4 wt%, tensile strength of the as-cast alloy decreased from 191 MPa to 183 MPa and, elongation of the alloy also decreased from 8.0% to 6.2%. Decrease of these properties can be explained as the formation of plate shape, ${\beta}-Al_5FeSi$ phase with low Mn/Fe ratio of the alloy. However, when Mn content of Al-4 wt%Mg-0.9 wt%Si-0.3 wt%Fe alloy increased from 0.3 wt% to 0.5 wt%, tensile strength of as-cast alloy increased from 181 MPa to 194 MPa and, elongation of the alloy increased from 6.8% to 7.0%. These improvements attribute to the morphology change from ${\beta}-Al_5FeSi$ phase to chinese script, ${\alpha}-Al_{15}(Fe,Mn)_3Si_2$ phase shape-modified from with high Mn/Fe ratio of the alloy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Journal of Korea Foundry Society
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• v.31 no.1
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• pp.18-25
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• 2011

Effect of Fe and Mn contents on the tensile properties has been studied in Al-9wt%Si-0.3wt%Mg alloy. As Fe content of Al-9wt%Si-0.3wt%Mg-0.5wt%Mn alloy increased from 0.15wt% to 0.45wt%, tensile strength of as-cast alloy decreased from 192 MPa to 174 MPa, and elongation of the alloy also decreased from 4.8% to 4.2%. Decrease of these properties can be explained as the formation of plate shape, ${\beta}-Al_5FeSi$ phase with high Fe/Mn ratio of the alloy. However when Mn content of Al-9wt%Si-0.3wt%Mg-0.45wt%Fe alloy increased from 0.3wt% to 0.5wt%, tensile strength of T6 aged alloy increased from 265 MPa to 275 MPa, and elongation of the alloy increased from 2.3% to 3.6%. These improvements attribute to chinese script, ${\alpha}-Al_{15}(Mn,Fe)_3Si_2$ phase shape-modified from ${\beta}-Al_5FeSi$ phase with low Fe/Mn ratio of the alloy.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.37-41
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• 2012

A lithium ion conducting borosilicate glass was fabricated by a conventional melt quenching technique from a mixture of Li2CO3, B2O3 and SiO2 powders. The Li ion conductivity of the lithium borosilicate glasses was evaluated in terms of the SiO2/B2O3 ratio. In the Li2O-B2O3-SiO2 ternary glass, the glass forming region decreases with an increasing Li2O content. At the same Li2O, the crystallization tendency of the glass samples increases with the SiO2/B2O3 ratio, resulting in a reduced glass forming region in the Li2O-B2O3-SiO2 ternary glass. The electrical conductivity moderately depends on the SiO2/B2O3 ratio in the Li2O-B2O3-SiO2 ternary glass. The conductivity of the glasses slightly increases with the SiO2/B2O3 ratio. The observed phenomenon can be explained by the modification of the glass structure as a function of the SiO2 content.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.139-139
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• 2010

금속 실리사이드 나노입자는 열적 및 화학적 안정성이 뛰어나고, 절연막내에 일함수 차이에 따라 깊은 양자 우물구조가 형성되어 비휘발성 메모리 소자를 제작할 수 있다. 그러나 단일 $SiO_2$ 절연막을 사용하였을 경우 저장된 전하의 정보 저장능력 및 쓰기/지우기 시간을 향상시키는 데 물리적 두께에 따른 제한이 따른다. 본 연구에서는 터널장벽 엔지니어링을 통하여 물리적인 두께는 단일 $SiO_2$ 보다는 두꺼우나 쓰기/지우기 동작을 위하여 인가되는 전기장에 의하여 상대적으로 전자가 느끼는 상대적인 터널 절연막 두께를 감소시키는 방법으로 동작속도를 향상 시킨 $SiO_2/Si_3N_4/SiO_2$ 및 $Si_3N_4/SiO_2/Si_3N_4$ 터널 절연막을 사용한 금속 실리사이드 나노입자 비휘발성 메모리를 제조하였다. 제조방법은 우선 p-type 실리콘 웨이퍼 위에 100 nm 두께로 증착된 Poly-Si 층을 형성 한 이후 소스와 드레인 영역을 리소그래피 방법으로 형성시켜 트랜지스터의 채널을 형성한 이후 그 상부에 $SiO_2/Si_3N_4/SiO_2$ (2 nm/ 2 nm/ 3 nm) 및 $Si_3N_4/SiO_2/Si_3N_4$ (2 nm/ 3 nm/ 3 nm)를 화학적 증기 증착(chemical vapor deposition)방법으로 형성 시킨 이후, direct current magnetron sputtering 방법을 이용하여 2~5 nm 두께의 $WSi_2$ 및 $TiSi_2$ 박막을 증착하였으며, 나노입자 형성을 위하여 rapid thermal annealing(RTA) system을 이용하여 $800{\sim}1000^{\circ}C$에서 질소($N_2$) 분위기로 1~5분 동안 열처리를 하였다. 이후 radio frequency magnetron sputtering을 이용하여 $SiO_2$ control oxide layer를 30 nm로 증착한 후, RTA system을 이용하여 $900^{\circ}C$에서 30초 동안 $N_2$ 분위기에서 후 열처리를 하였다. 마지막으로 thermal evaporator system을 이용하여 Al 전극을 200 nm 증착한 이후 리소그래피와 식각 공정을 통하여 채널 폭/길이 $2{\sim}5{\mu}m$인 비휘발성 메모리 소자를 제작하였다. 제작된 비휘발성 메모리 소자는 HP 4156A semiconductor parameter analyzer와 Agilent 81101A pulse generator를 이용하여 전기적 특성을 확인 하였으며, 측정 온도를 $25^{\circ}C$, $85^{\circ}C$, $125^{\circ}C$로 변화시켜가며 제작된 비휘발성 메모리 소자의 열적 안정성에 관하여 연구하였다.