• Journal of the Korean Ceramic Society
• /
• v.53 no.4
• /
• pp.463-467
• /
• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.3
• /
• pp.576-581
• /
• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.05a
• /
• pp.55-55
• /
• 1996

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.325-326
• /
• 2006

Using $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives and Si as a raw powder, the continuously porous in-situ $Si_2N_2O-Si_3N_4$ bodies were fabricated by multi-pass extrusion process and their microstructures were investigated depending on the addition of carbon (0-9wt%) in the mixture powder. The introduction of $Si_2N_2O$ fibers observed in the unidirectional continuous pores as well as in the pore-frame regions of the nitrided bodies can be an effective method in increasing the filtration efficiency. In the case of no carbon addition, the network type $Si_2N_2O$ fibers with high aspect ratio appeared in the continuous pores with diameters of 150-200 nm. However, in the case of 9wt% C addition, the fibers were found without any network type and had diameters of 200-250 nm.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.117.1-117.1
• /
• 2007

• The Journal of Natural Sciences
• /
• v.5 no.2
• /
• pp.75-80
• /
• 1992

The objective of this study is to investigate the effect of dispersion of silicon nitride powder with 5wt% $A1_2$$O_3$ and 5wt% $Y_2$$O_3$ on the microstructure of a sintered body. $Si_3$$N_4$ powder was dispered in a distilled water with varing pH.Zeta potential was measured and the dispersion states were directly observed by SEM. Green bodies were obtained by slip-casting and fired at $1750^{\circ}C$ for 1 hr. Microstructures of fired specimens were observed by SEM. The result were that the specimen prepared from the dispersions with pH 5 and 10 showed the best densification.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.153.1-153.1
• /
• 2007

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2003.10a
• /
• pp.59-65
• /
• 2003

Four kinds of $Si_3N_4$-based ceramic cutting tools with different sintering time were fabricated to investigante the effect of sintering time on the microstructure, mechanical properties, grain sizes and the cutting performance. An endeavor was also made to determine the relation among mechanical property, Brain size and tool life. $Si_3N_4$ home made cutting tool sintered for 1 hour under $1760^{\circ}$ temperature and 25MPa pressure showed the best cutting performance among selected ceramic tools during machining both Bray cast iron and heat treated SCM440. Multiple linear regression model was used to estimate the tool lift from mechanical property, grain size and showed good result. It was also shown that hardness imposed the biggest offect on tool life.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1992.05a
• /
• pp.143-143
• /
• 1992

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.04a
• /
• pp.42.1-42.1
• /
• 2000