• Transactions of the Korean Society of Machine Tool Engineers
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• v.10 no.6
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• pp.78-84
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• 2001

In the present study, SiCSi-$Si_3 N_4$-SiC ceramic composites that contained up to 30 wt% of dispersed SiC particles were fabricat-ed cia hot-pressing with an oxynitride glass. The microstructure, the mechanical properties and the cutting performance of resulting ceramic composites were investigated. By fixing the composition as $Si_3 N_4$-20wf%SiC, the effect of sintering time on the microstructure, the mechanical properties and the cutting performance were also investigated. The longer sir-tering time is, the bigger the grain size of SiC is. The fracture toughness(-$K_k$) of the $Si_3 N_4$-SiC ceramic composites increased with the increase of gain size, while the flexural strengthh($\sigma$) decreased. For machining SCM440, the insert with 20wt%r SiC sintered for 8 hours showed the longest tool life while the insert with 20wt% SiC sintered for 12 hours showed the longest tool life for machining gray cast iron.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.151-151
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• 2001

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.189-196
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• 1991

Si(OC2H5)4, commercial AlN and Y2O3 powder were used as the precusor of Si3N4, AlN, Y2O3, respectively. After Si3N4 powder was synthesized by carbothermal reduction and nitridation at 135$0^{\circ}C$ for 13h in N2 atmosphere, characteristics of synthesized powder and the ceramics sintered at 178$0^{\circ}C$ for 1h under 30MPa were investigated. In order to evaluate the reliability of sintered body, Weibull modulus was investigated. Premixing of carbon black as a reduction agent had no effect on Si(OH)4 formation, and Si3N4 powder synthesized from Si(OC2H5)4 was $\alpha$-Si3N4 single phase. Mechanical properties of sintered body were measured as follows : flexural strength ; 750MPa, fracture toughness ; 3.71Mn/3/2, hardness : 17.4GPa, thermal shock resistence temperature ; $600^{\circ}C$. Flexural strength at room temperature was 750MPa and was retained up to 110$0^{\circ}C$. The Weibull modulus of sintered body was 10.7.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.124-125
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• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.412-415
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• 2003

[ $Si_3N_4$ ] thin film is the good material to fabricate the capacitors at MMIC processes. Normally, $Si_3N_4$ thin films is used to dielectric in the MIM capacitor and film thickness is $2000\;{\AA}$. Insulator(or dielectric) was deposited by PECVD at our MIM structure with air bridge which connect between top metal and contact pad. We optimized PECVD process to fabricate the good capacitors which can be applied at the true MMIC. The thickness of our $Si_3N_4$ thin films was $1000\;{\AA}$ shallower than $2000\;{\AA}$, and their breakdown voltages were above 70V.

• Journal of the Korean Ceramic Society
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• v.28 no.1
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• pp.53-59
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• 1991

The reaction product between Si3N4 and ZrO2 has been studied by heat treatment of Si3N4-Zr(Y)O2 composite in high vacuum(<10-5 torr) and in air at $700^{\circ}C$. ZrN was formed after heat treatment in vacuum and easily oxidized after heat treatment in air. The amount of ZrN is related to the Y2O3 content dissolved in ZrO2. After the heat treatment in air the toughness increased and the spalling due to the oxidation of ZrN in specimen surface was observed. As a result, it is suggested that the formation of ZrN phase in Si3N4-ZrO2 composite enhance the toughness of the composite in an oxidation conditon.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1196-1202
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• 2018

$Li_2Sr_{1-x}Eu_xSiO_{4-{\alpha}}N_{\alpha}$ ($Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$) phosphors were synthesized by using a solid state reaction (SSR) method with submicron $Si_3N_4$ and nano $Si_3N_4$ powders as the sources of Si and N, and the optical properties of those phosphors were studied. The studied phosphors showed efficient excitation characteristics over the broad range from 230 to 530 nm. Also, They showed broad emission spectra covering a range from 500 to 700 nm, with a peak at 568 nm, which was shifted longer wavelength by 18 nm as compared with that of commercial $YAG:Ce^{3+}$. Combined with a 450 nm blue LED chip, the results support the application of the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ phosphor as a luminescent material for a white-light source thaat is warmer than the commercial $YAG:Ce^{3+}$ white-light source. In addition, the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$ phosphors prepared from a submicron $Si_3N_4$ powder was found to emit a previously unreported self-activated luminescence in $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.7
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• pp.652-657
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• 2009

Strength characteristics of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and additive $SiO_2$. $SiO_2$ colloidal could significantly increase the bending strength. Crack healing temperature decreased 300 K by additive $TiO_2$. Bending strength of specimen added $SiO_2$ is higher than that of non-added $SiO_2$. Moreover, bending strength of specimen with $SiO_2$ colloidal coating is much higher that of non-coated specimen. In in-situ observation, crack-healed specimen at 1,573 K shows phenomenon like a fog on the surface. By SPM, both crack-healed specimen, non-coating and coating of $SiO_2$ colloidal, at 1,273 K were healed completely but both of 1,573 K exist crack. This was made by evaporation of $SiO_2$ at high temperature. Crack-healing materials of $Si_3N_4$ composite ceramics is crystallized $Y_2Si_2O_7$, $Y_2Ti_2O_7$ and $SiO_2$. A large amount of Si and O, and little C were detected by EPMA. Si and O increase but C decreases according to heat treatment temperature. Specimens with additive $SiO_2$ were more detected Si and O than that of non-additive $SiO_2$. Specimen with $SiO_2$ colloidal coatings were much more detected O.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.867-873
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• 2003

$Si_{3}N_{4}$-BN based machinable ceramics were fabricated by hot-pressing at $1800^{\circ}C$ for 2 h under a pressure of 25 MPa. The microstructure, mechanical properties, and machinability were investigated. With increasing h-BN content from 5 vol% to 30 vol%, three point flexural strength decreased from 1000 MPa of monolithic S $i_3$ $N_4$ to 720～400 MPa. The fracture toughness, $K_{IC}$ , was decreased from 7.6 MPaㆍ$m^{1/2}$ of monolithic S $i_3$ $N_4$ to 6.5～4.1 MPaㆍ$m^{1/2}$. The grain size and aspect ratio of $\beta$-S $i_3$ $N_4$ slightly decreased with increasing h-BN content. S $i_3$ $N_4$ monolith could not be machined due to brittle fracture, but S $i_3$ $N_4$-BN based machinable ceramics could be machined without fracture, showing excellent machinability. With increasing h-BN content, the thurst force during cutting and micro-drilling process was decreased.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.333-336
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• 2012

The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride ($Si_3N_4$) ceramics has been carried out in recent years. However, the density and the strength of $Si_3N_4$ ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent $Si_3N_4$ from densification and there is a possibility that CNTs react with $Si_3N_4$ or $SiO_2$. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, $HfO_2$ and $TiO_2$ was added to $Si_3N_4-Y_2O_3-Al_2O_3$-AlN system to fabricate CNT-dispersed $Si_3N_4$ ceramics at lower temperatures. $HfO_2$ promotes the densification of $Si_3N_4$ and prevents CNT from disappearance. As a result, the sample by adding $HfO_2$ and $TiO_2$ fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.