• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.102-106
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• 1997

Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of $SiN_{x}/SiO_{x}/(NON)$ films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of $SiN_{x}$ and NON films arc $7.6{\times}10^{8}dyne/cm^2$ and $3.3{\times}10^{8}dyne/cm^2$, respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressi\e stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by $2.74W/cm^2$ to $1.10W/cm^2$. The hest value of film stress obt;~ined under condition of lOmtorr and $1.37W/cm^2$ in this' experiment was $1.2{\times}10^{9}dyne/cm^2$ cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy $2.74W/cm^2$ to $1.10W/cm^2$. Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.81-83
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• 1992

The superconducting thin films deposited on $SiO_x$ substrate by R.F magnetron sputter using $YBa_2Cu_3O_x$ single target have been made and annealed at $940^{\circ}C$ for 30 min. The thickness of films were 1000-2000${\AA}$ with a rate of 20-25${\AA}/min$ and superconducting properties of thin films depended on the compositions of pre-annealed the thin films. It has been analyzed by SEM photo-analysis and X-ray diffraction patterns of these samples obtained under the various conditions of this sputtering methods. and recognized the supperconducting thin films by electric properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.418-424
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• 2000

Pure $TiO_2$and 10 mol % Pb-doped $TiO_2(Pb_xTi_{1-x}O_2$(x = 0.1)) powder and thin films have been prepared by the sol-gel method. Titanium isopropoxide and ethanol are used for pure $TiO_2$, lead acetate trihydrate and titanium triisopropoxide monoacethylacetonate are used for Pb-doped $TiO_2$, respectively. Films are coated on p-type Si(100) wafer and ITO glass substrates by the sol-gel spin-coating method. The powder and multi-coated films are annealed at different temperature (400~$800^{\circ}C$) for phase formation and crystallization. TGA/DTA, XRD analysis, SEM and UV-visible transmission spectroscopy have been used to study the characteristics of the powder and films. XRD results show that the films are polycrystalline, anatase type and oriented predominantly to the A(101) plane. A slight shift in the d-spacing for the Pb-doped film indicates the incorporation of the Pb into $TiO_2$lattice. A shift of the absorption wavelength in the transmission spectrum towards longer wavelength has been observed about $Pb_xT_{1-x}O_2$(x = 0.1) thin film, which indicates a decrease in the bandgap of $TiO_2$upon Pb-doping.

• Electronic Materials Letters
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• v.14 no.6
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• pp.749-754
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• 2018

Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 ${\times}$ compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.

• Korean Journal of Materials Research
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• v.30 no.5
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• pp.262-266
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• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.131-135
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.481-485
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• 2001

We investigated the structural and electrical properties of the Ba ($Zr_{x}$ $T_{il-x}$ )$O_3$ (BZT thin films with a mole fraction of x=0.2 and thickness 150 nm for the application in MLCC (Multilayer Ceramic Capacitor). BZT films were prepared on $Pt/SiO_2$/Si substrate at various substrate temperatures by the RF-magnetron sputtering system. When the substrate temperature was above $500^{\circ}C$, we could obtain multi-crystalline BZT films oriented at (110), (111), and (200) directions. The crystallization of the film and high dielectric constant were observed with the increase of substrate temperature. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature. This paper reports surface morphology, dielectric constant, dissipation factor, and C-V characteristics for BZT films deposited at three different temperatures. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties but a little small dielectric constant for MLCC application.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.103-108
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• 2000

The texture of Al/Ti thin films deposited on low-dielectric polymer substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and SiO$_2$ by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and SiO$_2$ substrates was characterized by Transmission electron microscopy (TEM). hall thin films deposited on SiO$_2$ had stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM resealed that Brains of Ti films on SiO$_2$ substrates had grown perpendicular to the substrate, while the grains of Ti films on SiLK substrates were farmed randomly. The lower degree of 111 texture of Al thin films on low-k polymer was due to Ti underlayer.