• Journal of the Korean Ceramic Society
• /
• v.37 no.12
• /
• pp.1204-1211
• /
• 2000

Mn-Zn 페라이트 소결체와 SiO$_2$-PbO-ZnO 삼성분계 유리와의 계면반응에서 페라이트와 유리에 각각 첨가된 ZnO가 계면반응에 미치는 영향을 조사하였다. SiO$_2$-PbO-ZnO 삼성분계 유리에 첨가된 ZnO 함량이 낮은 경우 페라이트와의 접합계면에서 생성되는 중간상은 Pb$_2$(Mn,Fe)$_2$Si$_2$O$_{9}$와 Pb$_{8}$(Mn,Fe)Si$_{6}$O$_{21}$의 고용체였으며, ZnO 농도가 증가함에 따라 중간상은 사라졌다. 유리속의 ZnO 성분이 증가함에 따라 페라이트 소결체 쪽의 계면부근에 Zn의 농도가 증가하는 특이한 분포가 나타났다. 이는 유리 속에 첨가된 Zn 이온의 높은 활동도로 인해 페라이트에 포함된 Zn 이온의 용해반응이 선택적으로 억제되어 나타난 것으로 생각된다. 페라이트에 첨가된 ZnO 함량이 낮은 경우 SiO$_2$-PbO 이성분계 유리와의 접합계면에서 페라이트의 용해에 따른 침식과 입계를 통한 유리의 침투가 심하게 일어났으며, ZnO 함량이 증가함에 따라 계면을 통한 상호확산과 반응이 억제되었다.

• Journal of the Korean Vacuum Society
• /
• v.2 no.1
• /
• pp.28-33
• /
• 1993

산화분위기에서의 Ti/SiO2 박막의 산화거동 및 계면반응을 조사했다. SiO2막위에 100nm의 티타니움을 스퍼터법으로 형성하여 급속가열로(Rapid Thermal Processor)에서 온도를 달리하여 산화시켰다. 산화거동은 박막의 면저항의 측정, 산화막 두께측정, XPS(X-ray Photoelectron Spectroscopy)에 의한 조성분석으로 평가했다. 산화시 티타니움 면저항은 표면에서 산화로 인해 약 $500^{\circ}C$ 이상에서 증가하기 시작해서 $800^{\circ}C$에서 포화되었다. 이 때 막두께는 약 $700^{\circ}C$ 이상에서 약 2배로 증가한 후 일정한 두께를 나타내었다. 이 결과로부터 산화부산물에 도전성물질이 존재하는 것을 알 수 있었다. TEM과 XPS분석결과 40$0^{\circ}C$ 이상에서 산화시 Ti 표면에서부터 TiO2가 형성되고 $600^{\circ}C$ 이상에서는 TiO2의 형성과 Si의 석출이 확인되었다. 석출되는 Si의 양은 온도에 따라 증가했다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.3 no.2
• /
• pp.471-475
• /
• 1999

The metal plasma-etch damage immunity of nMOSFET with $N{_2}O$ gate oxide is found to be improved comparing to that with regular pure oxide of similar thickness. With increasing the antenna ratio (AR), the characteristics of nMOSFETs with $N{_2}O$ oxide shows tighter initial distribution and smaller degradation under constant field stress, which is explained by the effect of the nitrogen at the substrate $Si/SiO_2$ interface. Also, if $N{_2}O$ gate oxide is used, the maximum allowable size of metal AAR and PAR may be increased to the much larger values. These improvements of nMOSFETs with $N{_2}O$ gate oxide are attributed to the effect of the interface hardness improved by the nitrogen included at the substrate-Si/$N{_2}O$-oxide interface.

• Journal of Electrical Engineering and Technology
• /
• v.7 no.2
• /
• pp.236-239
• /
• 2012

In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.200-200
• /
• 2010

이 논문에서는 field-effect mobility를 향상시키기 위해 triple-layer (SiNx/SiO2/SiOxNy stack 구조)를 gate dielectric material 로 LTPS TFTs에 적용하였다. 이는 플라즈마 처리 기법과 적층구조의 효과적인 in-situ 공정을 이용하여 interface trap과 mobile charge를 낮추어 높은 이동도의 결과를 생각하고 실험하였다. 실험은 SiO2 gatedielectric과 triple-gate dielectric의 C-V curve를 1 MHz의 주파수에서 측정하였다. 또한 Transfer characteristics를 single SiO2 gatedielectric과 triple-gate dielectric of SiNx/SiO2/SiOxNy를 STA 장비를 이용해 측정하였다. 위의 측정을 통해 threshold voltage, mobility, subtheshold swing, driving current, ON/OFF current ratio를 비교 분석하였다.

• Proceedings of the KIEE Conference
• /
• 1988.11a
• /
• pp.189-192
• /
• 1988

Nitrided oxides have been investigated recently for application as a replacement for thermally grown $SiO_2$ in MIS devices. In this paper, thin oxides were nitrided in $N_2$ Plasma ambient. With the measurement of the equivalent paralled conductance and capacitance by the using coductance technique, the characterization of Si-SiON interface is developed. The interface state density of Si-SiON is obtained by $1{\times}10^{11}{\sim}9{\times}10^{11}(eV^{-1}Cm^{-2})$. After${\pm}$B-T stress is performed on the sample, the interface state density gets increased.

• Journal of the Korean Ceramic Society
• /
• v.32 no.1
• /
• pp.31-36
• /
• 1995

(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.5
• /
• pp.709-715
• /
• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.79-82
• /
• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.2
• /
• pp.98-103
• /
• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.