• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.793-801
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• 1996

The effect of catalysts which was catalyzed by acid($HNO_3$) and base ($NH_4OH$) or not on the surface microst-ructures and consequent dielectric characteristics of the $PbTiO_3$ thin films prepared by sol-gel method were investigated. The result indicated that bse catalyst promoted the phase transformation of perovskite phase while acid catalyst was found to produce most uniform surface microstructure and improved dielectric properties However degradation of properties due to secondary phase formation and non-uniform microstructure at high annealing temperature (>75$0^{\circ}C$) by rapid diffusion of lead was unavoidable in any case as long as $Si_{(100)}$ \ $SiO_2$ \Pt substrate used.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.10-15
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• 2009

We have fabricated silicon-rich silica thin films via RF magnetron sputtering using a SiO target. Thickness evolution and microstructure change of such $SiO_x$ (1$SiO_x$ thin films turned out to be mainly responsible for the increase of refractive index.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.11
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1044-1050
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• 2000

ZnO-Pr$_{6}$O$_{11}$-Co$_3$O$_4$-CaO 사성분계에 SiO$_2$를 0.4at%까지 첨가하여 1180, 1200 및 125$0^{\circ}C$에서 소성하여 미세구조 및 전기적인 특성을 조사하였다. 소성온도 120$0^{\circ}C$ 이상에서 치밀한 시편을 얻을 수 있었고, Si는 주로 입계에 분포하고 있으며, SiO$_2$첨가는 결정립성장을 억제하였다. 이 현상은 고상소결만이 일어나 120$0^{\circ}C$에서 소결된 시편과 액상소결이 일어난 125$0^{\circ}C$에서 소결된 시편 모두에서 관찰되었으며, SiO$_2$첨가에 의한 기공의 증가에 기인하는 것으로 판단된다. SiO$_2$의 첨가에 의해 바리스터의 비선형계수가 크게 변화하였으며, 시편의 소성과정이 고상소결인 경우 비선형계수가 증가한 반면 액상소결인 경우에는 감소하였다. 적절한 양의 SiO$_2$(약 0.3at%)를 첨가하여 액상이 형성되지 않는 120$0^{\circ}C$에서 소성하여 80 이상의 비선형계수를 갖는 바리스터를 제조할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.311-318
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• 1998

The reaction bonded alumina ceramics with reinforced particles which have low shrinkage were pro-duced by blending of SiC or TiC or ZrO2 powders to the mixture of Al metal and Al2O3 powder. The powd-ers were attrition milled isostantically pressed and preheated tio 110$0^{\circ}C$ with a heating rate of $1.5^{\circ}C$/min The specimens were then sintered at the temperature range 1500 to 1$600^{\circ}C$ for 5 hours with a heating rate of 5$^{\circ}C$/min. The specimens showed 5-9% weight gain and 2-9% dimensional expansion through the complete oxidation of Al after preheating up to 11--$^{\circ}C$ the overall dimensional change of the specimens after the reaction sintering at 1500-1$600^{\circ}C$ was 6-12% The maximum densities were 92% theoretical. The fine grain-ed(average grain size :0.4 ${\mu}{\textrm}{m}$) microstructure were observed in the specimen with ZrO2 and SiC. But the microstructure of specimen with TiC was relatively coarse.(average grain size : 2.1 ${\mu}{\textrm}{m}$) The mullite phase was formed by the reaction of Al2O3 and SiO2 in a specimen with SiC. In the TiC contained specimen TiC was oxidized into TiO2 and finally reacted with Al2O3 to form Al2TiO5 during sintering.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.125-130
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• 2004

The effect of SiC particle size on the microstructures and mechanical properties of A1$_2$O$_3$-SiC composite was investigated. Two types of SiC powders having average particle sizes of 0.15 ${\mu}{\textrm}{m}$ and 3 ${\mu}{\textrm}{m}$ were used. The grain growth in the specimen containing 0.15 ${\mu}{\textrm}{m}$ SiC was effectively inhibited due to the fine SiC particles. However, after the formation of some abnormal grains, fast and exaggerated grain growth occurred which led to the microstructure of large grains with irregular shape. Fracture strength decreased due to the abnormal large grains. On the other hand, for specimen containing 3 ${\mu}{\textrm}{m}$ SiC showed normal grain growth behavior from initial sintering stage. Large SiC particles, however, effectively inhibited exaggerated grain growth after nucleation of a few abnormal grains. As a consequence, microstructure consisted of homogeneous elongated grains. In the A1$_2$O$_3$-2.5SiC(0.15 ${\mu}{\textrm}{m}$)-2.5SIC(3 ${\mu}{\textrm}{m}$) composite fabricated by mixing the two types of SiC powder, abnormal grain growth occurred. However, the good fracture strength was maintained regardless of microstructural changes in this specimen.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1169-1175
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• 1994

Five Al2O3/SiC/metal composites with four different particle sizes of green SiC abrasive grains are grown by the directed oxidation of an commercially available Al-alloy. Oxidation was conducted in air at 100$0^{\circ}C$, 96 hours long. Slip casted SiC-fillers were placed on the alloy or SiC powder deposited up to the required layer thickness. Their microstructures are described and measurements of density, elastic constants, frexural strength, fracture toughness and work of fracture are reported. The results are compared with those of commercial dense sintered Al2O3. The properties of produced materials have a strong relationship to not only the properties of Al2O3, SiC, Al and Si but also to the phase share and phase distribution. The composite materials are dense (0.5% porosity), tough (KIC = 3.4~6.4 MPa{{{{ SQRT { m} }}), strong ({{{{ sigma }}B = 170~345 MPa) and reasonably shrinkage free producible. The reinforcements is attained mainly through the plastic deformation of ductile metal phase.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.169-176
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• 1996

The specimens which were prepared from $\alpha$-Si3N4 with additions of YAG(3Y2O3.5Al2O3)-10 wt% and various AlN contents were sintered in N2 atmosphere at 1$700^{\circ}C$ The effect of $\alpha$,$\beta$-solid solution contents and sintering time on mechanical properties were investigated. As the content of $\beta$-solid solution and sintering time increased the hardness is reduced but the hardness of specimen sintered over 10 hours is constant irrespective of sintering time. While the fracture toughness increased with increasing of $\beta$-solid solution and sintering time. The fracture toughness of specimen with 80% $\beta$-solid solution content increased from 3.89 to 6.66 MPam1/2 with sintering sintering up to 20 hours/ But the amount of increased fracture toughness of specimen with below 20% $\beta$-solid solution content is not significant.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.473-480
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• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.