• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.859-865
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• 2004

LaNiO$_3$(LNO) thin films on (100) Si substrates are prepared by sol-gel method on heat treatment conditions, such as heat transfer direction, pyrolysis and annealing process, and annealing temperatures and times. The effect of heat treatment conditions on the (100) orientations, structures and resistances of the thin films are investigated by XRD, SEM(FESEM), and a lout probe method. Highly (100) orientation factor(0.97), a pseudocubic crystalline structure with a dense and uniform microstructure could be formed by the following conditions： 1) the heat transfer direction is from Si substrate to LNO, 2) the pyrolysis and annealing process are alternated, 3) the annealing temperature is $650^{\circ}C$ and 4) the annealing times is 3 minutes. The sheet resistance of thin films decreased with increasing of a annealing temperature and time, and a number of coating.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.05a
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• pp.23-28
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• 2002

This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.255-259
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• 1999

높은 투자율과 낮은 손실특성을 지닌(Mn, Zn)ferrite의 전자기적 특성은 소결공정과 소결분위기에 따라 상당히 다양하게 나타난다. 본 연구에서는(Mn, Zn)ferrite를 소결시킬 때의 승온속도와 냉각속도에 따른 초투자율 특성과 미세구조의 관계에 관하여 고찰하였다. 승온속도의 영향을 고찰하기 위하여 spinel ferrites 생성 및 결정입 성장 거동에 가장 중요한 온도인 800~120$0^{\circ}C$의 범위에서 속도를 변화시켰고, 냉각속도 영향을 살펴보기 위하여 1100~80$0^{\circ}C$ 온도범위를 택하였다. 열처리 온도범위 800~120$0^{\circ}C$에서 승온속도가 증가함에따라 초투자율이 7$^{\circ}C$/min까지는 증가했으나 그 이상의 승온속도에서는 오히려 초투자율이 감소하였다. 또한 1100~80$0^{\circ}C$ 온도범위에선 냉각속도가 증가될수록 초투자율이 감소하는 경향을 나타내었다. 치밀화 및 투자율을 높이기 위하여 첨가된 CaO, SiO2, V2O5의 분포상태를 분석한 결과, 이들 첨가물들은 입자와 입계를 따라 균일하게 분포하는 것으로 나타났다.

• Journal of the Korean Ceramic Society
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• v.44 no.7
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• pp.354-357
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• 2007

The nitriding and post-sintering behavior of silicon powder compact containing sintering additives of 2.3 wt% and 7 wt% were investigated in this study. Regardless of the liquid phase content, elongated large grains of a typical morphology evolved in the post-sintered specimens. Phase analysis revealed a complete phase transformation into ${\beta}-Si_3N_4$ in both porous systems. Oxynitride second phases (mellilite) precipitated in the latter, while those were free in the former containing less amount of liquid phase. The post-sintering condition that yielded a favorable microstructure for a filter application was achieved when the specimens were soaked at $1800^{\circ}C$ for 2 h. It was found that the thermal conductivity of porous $Si_3N_4$ ceramics is dominated by the porosity more than this factor is influenced by the addition of $Al_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.168-171
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• 2003

Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2003.05a
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• pp.289-293
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• 2003

This study dealt with the characterization of $MoSi_2$ based composites containing three types of additive materials such as SiC, $NbSi_2\;and\;ZrO_2$ particles have been investigated, based on the detailed examination of their microstructures and fracture surfaces. The effects of reinforcing materials on the high temperature strength of $MoSi_2$ based composites have been also examined. $MoSi_2$ based composites were fabricated by the hot press process under the vacuum atmosphere. The volume fraction of reinforcing materials in the composite system was fixed as 20 %. The microstructures and the mechanical properties of $MoSi_2$ based composites were investigated by means of SEM, EDS, XRD and three point bending test.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.180-184
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• 2012

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.351-359
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• 2001

배향 입자층과 비배향 입자층이 상호적층된 알루미나 적층복합체를 연속 테입캐스팅 및 상압소결에 의해 제조하였다. 알루미나의 미세구조 배향을 위하여 알루미나 판상입자를 배향물질(template)로 사용하였으며, 알루미나의 입자배향 거동에 미치는 액상의 영향을 알아보기 위해 anorthite(CaAl$_2$Si$_4$O$_{8}$)를 첨가하였다. 적층체 내의 알루미나 입자배향을 X-선 회절법으로 분석한 결과 (006)면과 (1010)면으로 배향되어 있었다. 액상조성이 첨가되지 않은 경우와 비교시 anorthite를 첨가한 경우 입자배향층 내에는 액상으로 인한 큰 기공이 생성되었으며 배향도는 감소되었다. 그러나, 액상조성으로 anorthite가 첨가되어 입자배향이 이루어진 적층체 계면에서는 입자배향으로 인한 효과적인 균열전파 제어 거동이 관찰되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.62-68
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• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.