• Journal of the Korean Ceramic Society
• /
• v.28 no.7
• /
• pp.531-540
• /
• 1991

In this study, high quality machinable ceramics was prepared from the K2O-MgO-Al2O3-SiO2-B2O3-F glass system using domestic pyrophyllite. The mixture of pyrophyllite and additives was melted at 1450$^{\circ}C$ for 1 hour and formed in a graphite mold. The base glass was heat-treated at 600$^{\circ}C$ to 1200$^{\circ}C$ with interval of 50$^{\circ}C$ for 3 hours identified by XRD. Crystalline phase were confirmed by XRD and their microstructure was observed by SEM. The glass ceramics which was prepared by heat treatment of base glass at 1150$^{\circ}C$ for short time has good physical, mechanical, thermal, chemical properties and machinability.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2000.11a
• /
• pp.304-309
• /
• 2000

Si$_3$N$_4$-6wt%Y$_2$O$_3$-lwt%Al$_2$O$_3$was prepared by hot pressed and gas pressure sintering to investigate the effect of microstructure on erosion behaviors. Hardness and fracture toughness were measured with prepared specimens to study the high temperature erosion properties. A gas blast type erosion tester was used In examine erosion behavior of the specimens up to 700$^{\circ}C$. In case of GPS silicon nitride, the erosion rate increases up to 500$^{\circ}C$ and decreases over 500$^{\circ}C$. Maximum erosion rate was observed at 300$^{\circ}C$ for HP silicon nitride. The principal factors affecting the high temperature erosive wear of brittle materials are largely dependent on high temperature properties of grain boundaries.

• Korean Journal of Metals and Materials
• /
• v.47 no.5
• /
• pp.322-329
• /
• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Korean Journal of Materials Research
• /
• v.15 no.7
• /
• pp.486-490
• /
• 2005

Thin films of tungsten oxide and nickel oxide were deposited on $Al_2O_3/Si-substrate$ by high vacuum thermal evaporation. The properties of microstructure and crystallinity were analyzed by SEM and XRD respectively. $WO_3$ films without addition of NiO showed polycrystalline structure after annealing at $500^{\circ}C$ for SO min. There were the cracks between the polycrystalline grains and the crack width was increased with the thickness of $WO_3$ films. The cracks in the $WO_3$ films could be controlled by an optimum deposition of NiO on $WO_3$ films and either less or more than the optimum addition fails to suppress the cracks. A process mechanism to suppress the crack has been discussed.

• Journal of the Korean Ceramic Society
• /
• v.28 no.3
• /
• pp.215-224
• /
• 1991

The synthesis of SrTiO3 powders having high purity and homogeneous submicron particle size was attempted by the oxalate method. The microstructure and dielectric properties of SrTiO3 based boundary layer capacitor (BLC) were investigated. Strontium titanyl oxalate[SrTiO(C2O4)2.4H2O] was prepared from the mixing solution of (Sr, Ti) using oxalic acid(H2C2O4) as a precipitating agent at 8$0^{\circ}C$. The crystalline SrTiO3 powder was obtained by thermal decomposition of the precipitate above $600^{\circ}C$. The crystalline SrTiO3 powder containing Nb2O5 as a dopant, TiO2 and SiO2 as additives was sintered at 1360~144$0^{\circ}C$ in the reducing atmosphere to get semiconductive SrTiO3. Insulating material containing PbO-Bi2O3-B2O3 frit was printed on the sintered semiconductive SrTiO3 and fired at 120$0^{\circ}C$ for 2h to get the grain boundary diffusion.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2006.11a
• /
• pp.181-184
• /
• 2006

Nano Infiltration Transient Eutectic Phase - Silicon Carbide (NITE-SiC) and $SiC_f/SiC$ composite have been fabricated by a Hot Pressing (HP) process, using SiC powder with an average size of about 30nm. Alumina ($Al_2O_3$) and Yttria ($Y_2O_3$) were used for additives materials. These mixed powders were sintered at the temperature a of $1300^{\circ}C$, $1650^{\circ}C$, $1800^{\circ}C$ and $1900^{\circ}C$ under an applied pressure of 20MPa. And unidirection and two dimension woven structures of $SiC_f/SiC$ composites were prepared starting from Tyranno SA fiber. Densification of microstructure gives an effect to density. Specially, Densification Mechanism basically is important from the sintering which use the HP. In this study, the densification of NITE-SiC and $SiC_f/SiC$ composite mechanism by a press displacement appears investigated. The mechanism on the densification of each sintering temperature was investigated. The each step is shows a with each other different mechanism quality.

• Journal of the Korean Ceramic Society
• /
• v.31 no.7
• /
• pp.784-794
• /
• 1994

Though spodumene have a law theraml expension and good thermal shock resistance, its sintering temperature is too close to its melting point in the application for industral purpose. Solving the problems, impurities within the silicate minerals act as a frit during firing, so its densification is expected through enlargement of sintering temperature range. By the heat treatment of starting materials, mixtures of silicate mineral, lithium carbonate, if necessary SiO2 or Al2O3 were added for stoichiometric correction, in the range of 1000~125$0^{\circ}C$ for 10 hrs, $\beta$-spodumene single phase was synthesized. Mixtures with sillimanite group minerals, $\beta$-spodumene was formed at 120$0^{\circ}C$ or 125$0^{\circ}C$ via intermediate phases of petalite, Li2SiO3 and LiAlO2. For the case of kaolin group minerals, synthesis were completed at 110$0^{\circ}C$ for Hadon pink kaolin, 120$0^{\circ}C$ for New Zealand white kaolin, When pyrophyllite group minerals were used, those were at the range of 1000~125$0^{\circ}C$. Spodumene was completed at lowest temperature, 100$0^{\circ}C$ from the mixture of Wando pyrophyllite among them. Microstructure of synthesized powders showed the inrregular lump shape such as densed crystallines.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.5
• /
• pp.1719-1723
• /
• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• Journal of the Korean Ceramic Society
• /
• v.48 no.6
• /
• pp.617-620
• /
• 2011

Thermal shock behavior of porous ceramic nozzles with various pore sizes for continuous casting process of steel was investigated in terms of physical properties and microstucture. Porous nozzle samples with a composition of $Al_2O_3$-$SiO_2$-$ZrO_2$ were fabricatedby adding various sizes of graphite as the pore forming agent. As the graphite size increased from 45~75 to 150~180 ${\mu}m$, both the resulting pore size and the flexural strength also increased. A thermal shock test was carried out at temperatures (${\Delta}$T) of 600, 700, 800, and 900$^{\circ}C$. Microstructure analysis revealed a small number of cracks on the sample with the largest mean pore size of 22.32 ${\mu}m$. In addition, increasing the pore size led to a smaller decrease in both pressure drop and elastic modulus. In conclusion, controlling the pore size can enhance thermal shock behavior.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc1
• /
• pp.149-153
• /
• 2012

Ti2AlN MAX-phase films were synthesized through the post-annealing process of as-deposited Ti-Al-N films. Near amorphous or quasi-crystalline ternary Ti-Al-N films were deposited on Si and Al2O3 substrates by sputtering a Ti2AlN MAX-phase target at room temperature, 300 ℃ and 450 ℃, respectively. A vacuum annealing of those films at 800 ℃ for 1 hour changed those films to crystalline Ti2AlN MAX-phase. The polycrystalline Ti2AlN MAX-phase films exhibited very excellent oxidation resistance due to its characteristics microstructure (nanolaminates), which has potential applications for high-temperature protective coatings. The microstructure and composition of Ti2AlN MAX-phase films were investigated using with a variety of characterization tools.