• Korean Journal of Materials Research
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• v.7 no.2
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• pp.93-101
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• 1997

Lead titanate박막을 $Pt/Ti/SiO_{2}/Si(Pt/Ti기판)와\;Pt/Ta/SiO_{2}/SiO_{2}$Si(Pt/Ta 기판) 위에서 전자 사이크로트론 공명플라즈마 화학증착법(ECR PECVD)으로 증착하였다. 증착온도, 산소유입량, MO source유입비등의 증착변수에 따른 lead titanate박막의 조성과 미세구조를 주사전자현미경(SEM), 투과전자현미경(TEM), X선 회절법(XRD)으로 조사하였다. 산소유입량이 적을 경우,Tisource와 Pb source의 산소화의 반응성 차이 때문에 Pb 농도가 부족한 화학양론비가 잘 맞는 박막이 증착되었다. Pt/ti기판은 lead titanate박막증착도중 기판의 Ti층과 Pt층의 확산으로 기판변형이 발생하는 반면, Pt/Ta기판은 기판변형이 일어나지 않았다. Pt/Ta기판에서 페롭스카이트 화학양론비를 갖는 매우 평탄한 lead titanate박막을 증착 하였는데, 산소유입량이 lead titanate박막의 결정성을 크게 지배하였다.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.4_2
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• pp.669-674
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• 2020

Liquid-phase-sintered (LPS) SiC materials were briefly examined with their microstructure and mechanical property. Especially, effect of high-temperature exposure on the tendency of fracture toughness of LPS-SiC were introduced. The LPS-SiC was fabricated in hot-press by sintering powder mixture of sub-micron SiC and sintering additives of Al₂O₃-Y₂O₃. LPS-SiC represented dense morphology and SiC grain-growth with some amount of micro-pores and clustered additives as pore-filling. The strength of LPS-SiC might affected by distribution of micro-pores. LPS-SiC tended to decrease fracture toughness depending on increasing exposure temperature and time.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.92-96
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• 1998

Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.572-580
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• 1994

With low thermal expansion coefficients, eucryptite (Li2O.Al2O3.2SiO2) and spodumene (Li2O.Al2O3.4SiO2) in LAS ceramic system show good thermal shock resistance. In this study, sillimanite or kaolin group silicate minerals and Li2CO3 were used as starting materials, and if necessary SiO2 or Al2O3 were added for making stoichiometrically formed specimens. By this process, eucryptite powders were synthesized and characterized. The powder mixtures of lithiumcabonate and silicate minerals calcined at 80$0^{\circ}C$ for 2 hrs were made into powder compacts. $\beta$-Eucryptite single phase was formed via intermediate phases of Li2SiO3 and LiAlO2 et al, by heating at 110$0^{\circ}C$ or 120$0^{\circ}C$ for 10 hrs from those powder compacts. When using the sillimanite group minerals, Virginia kyanite or andalusite was reacted to form eucryptite at 120$0^{\circ}C$and CMK International kyanite were completed at 110$0^{\circ}C$. When kaolin group minerals were used, it was found that the synthesizing temperature (100$0^{\circ}C$) of $\beta$-eucryptite from the mixture of New Zealand white kaolin was lower than that from Hadong pink kaolin (110$0^{\circ}C$). The Microstructure of systhesized powder showed the irregular lump shape such as densed crystallines.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.182-189
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• 2021

Porous ceramics were manufactured using the foaming method for the development of inorganic insulating materials. Silica fume and SiO₂ were used as main raw materials, and bentonite was used as a rapid setting agent for uniform structure formation of porous ceramics. The porous ceramics were sintered at 1200℃, and porosity, density, compressive strength, microstructure and thermal conductivity were analyzed. As the content of silica fume to SiO₂ of the porous ceramics increased 70 to 90 %, the specific gravity increased from 0.63 to 0.69, and the compressive strength increased from 9.41 Mpa to 12.86 Mpa. But, the porosity showed a tendency to decrease from 72.07 % to 70.82 %, contrary to the specific gravity. As a result of measuring the thermal conductivity, the porous ceramic with a silica fume content of 70 % showed a thermal conductivity of 0.75 to 0.72 W/m·K at 25 to 800℃, respectively, and, another that a silica fume content of 90 % showed a 0.66~0.86 W/m·K. So the lower the silica f ume content, the lower the thermal conductivity, which was conf irmed to be consistent with porosity result. As a result of microstructure analysis using SEM (Scanning Electron Microscope), pores in the range of tens to hundreds ㎛ were observed inside and outside the porous ceramic, and it was confirmed that the pore distribution was relatively uniform.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.832-838
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• 1995

The densifying behavior of ultrafine amorphous Si3N4 (about 20 nm)-$\beta$-SiC (about 40~80 nm) powders (O2 : 1.3~15wt%, 0$700^{\circ}C$ within 15 sec and then immediately cooled and held at 135$0^{\circ}C$ for 10 min in N2 atmosphere without resorting to additives using a Xe image heating apparatus. Using an ultrafine pure Si3N4 powder with particle size less than 30nm, further more, mixed with an appropriate amount of $\beta$-SiC, was found to be advantageous to obtain uniform and homogeneous microstructure. In addition, ultrafine Si3N4 powders were also proved to be effective as sintering additive on densifying large sized Si3N4 powder compacts.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.299-305
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• 2003

Physical properties and microstructure of new coumarin 4 doped $SiO_2$-PDMS ORMOSILs, synthesized by one-step (OS, acid-catalysis) and two-step (TS, acid-base catalysis) routes of sol-gel method with varying pH (0.6 to 7) and dye content $(5\;{times}\;10^{-4}\;to\;5{\times}\;10^{-2}\;mole)$, are reported. BET, UV-visible spectroscopy and SEM were used for characterizations. The increase in acid or base concentration increased the size of pores and aggregated silica particles. The samples with pH ≤ 2.5 were transparent and attributed to the small size of pores (~20 Å) and silica particles. The samples with pH > 2.5 were translucent or opaque due to non-uniform pore system formed by voids and large aggregated silica particles. The surface area was found a key factor controlling the interactions between the gel matrix and the dye. The OS samples with the highest dye concentration exhibited the minimal values of pore size, surface area and silica particle size, resulting in the concentration-quenching phenomenon.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.