• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.742-749
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• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.22-25
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• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• Journal of Powder Materials
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• v.18 no.1
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• pp.35-40
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• 2011

LAS-system ceramic powder, spodumene ($Li_2O{\cdot}Al_2O_3{\cdot}4SiO_2$), was successfully synthesized by a chemical solution technique employing PVA(polyvinyl alcohol) as an organic carrier. The PVA content affected the microstructure of porous precursor gels and the crystalline development. The optimum PVA content contributed to homogeneous distribution of metal ions in the precursor gel and it resulted in the synthesis of glass free $\beta$-spodumene powder having a specific surface area of $7.57\;m^2/g$. The agglomerated $\beta$-spodumene powders were also enough soft to grind to fine powders by a simple ball milling process. The microstructures of the densified powder compacts were strongly dependant on the minor phases of spodumene solid solution and amount of liquid phase, which were formed from the inhomogeneous precursors.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.199-207
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• 1997

$Al_2O_3$/SiC particulate composites were fabircated by pressureless sintering. The dispersed phase was SiC of which the content was varied from 1.0 to 10 vol%. Three SiC powders having different median diameters from 0.28 $\mu\textrm{m}$ to 1.9 $\mu\textrm{m}$ were used. The microstructure became finer and more uniform as the SiC content increased except the 10 vol% specimens, which were sintered at a higher temperature. Under the same sintering condition, densification as well as grain growth was retarded more severly when the SiC content was higher or the SiC particle size was smaller. The highest flexural strength obtained at 5.0 vol% SiC regardless of the SiC particle size seemed to be owing to the finer and more uniform microstructures of the specimens. Annealing of the specimens at $1300^{\circ}C$ improved the strength in general and this annealing effect was good for the specimens containing as low as 1.0 vol% of SiC. Fracture toughness did not change appreciably with the SiC content but, for the composites containing 10 vol% SiC, a significantly higher toughness was obtained with the specimen containing 1.9$\mu\textrm{m}$ SiC particles.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.491-499
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• 1997

High flexible lightweight composites containing tobermorite as a main mineral is produced using various amorphous silicates, lime, cement and fibers. Here, Mechanical properties of the composites were studied by observing microstructures of hydrates and fibers. Amorphous silicates having better hydraulicity retarded the crystallization of tobermorite due to better formation of C-S-H gel in water bath curing, but, difficult conversion from C-S-H gel to tobermorite in hydrothermal reaction. In the low molar ratio of CaO/SiO2 (0.67), faster crystalization was observed dued to more impurities such as Al2O3 alkali, resulting in improving mechanical properties due to small crystal size and many contact points. It was identified that a lot of calcium silicate hydates formed at surface of pulps increase bonding strength and the crack-resistance of matrix in the composites, but decrease hardness and compressive strength. The choice of amorpous silicates having better hydraulicity, low CaO/SiO2 adding each fibers bellow about 5% in the raw mixs and lower molding pressure should be needed at improve mechanical properties of composites.

• Journal of the Korean Ceramic Society
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• v.18 no.1
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• pp.27-34
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• 1981

The phase separation of low-alkali borosilicate glass with the composition of $6.25Na_2O$.$18.75B_2O_3$.$75.00SiO_2$(mole%) substituting $Li_2O$ for $Na_2O$ was studied. The phase separation in the temperature range of transformation was examined with various heating temperatures and soaking times. Durability to water, thermal expansion and specific density of the specimen were investigated and the microstructure of the separated phase was also observed by transmission electron micrograph techniques. The maximum alkali extraction result with the best phase separation effect was obtained when $Na_2O$ of the base glass was replaced with $1.88Li_2O$ (mole %) and electron micrograph of carbon film replica of $1.88Li_2O$$4.37Na_2O$.$18.75B_2O_3$.$75.00SiO_2$ (mole %) glass showed that the glass consisted of homogeneous two phases. The minimum specific density was shown with the specimen treated at 57$0^{\circ}C$ and it was also shown that the longer the treating time the lower the specific density. The apparent activation energies of approximately 45 kcal/mole by the alkali extraction and 43kcal/mole by the thermal expansion method were derived from the Arrhenius plots, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.799-807
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• 1990

In this study, effects of oxide additives on mechanical properties and microstructure of A1N and A1N polytype ceramics were investigated. Fine A1N powder was synthesized by nitriding alumiuim hydroxide prepared from Al-isopropoxide, at 1350$^{\circ}C$ for 10h in N2 atmosphere. By adding 3w/o Y2O3, 0.56w/o CaO, and 10w/o SiO2 to AlN powder, AlN and AlN polytype ceramics were prepared by hot-pressing under the pressure of 30 MPa at 1800$^{\circ}C$ for 1h. AlN ceramics with no additives formed considerable amount of AlON phase, while AlN ceramics doped with Y2O3 or CaO decreased AlON phase and formed Y-Al or Ca-Al oxide compound. AlN＋10w/o SiO2(＋3w/o Y2O3) composition produced AlON and AlN polytype compound having 21R as a major phase. Room temperature flexural strength of AlN ceramics with no additive was 246MPa, and room temperature flexural strength and critical temperature difference by thermal shock(ΔTc) of AlN ceramics dooped with Y2O3 or CaO were 532MPa/340$^{\circ}C$ and 423MPa/300$^{\circ}C$, respectively. Y2O3 and CaO used as sintering agent played roles of densification and oxygen removal of AlN ceramics, and affected grain growth/grain morphologies of AlN ceramics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.802-807
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• 2001

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.42-45
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• 1992

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.