• 한국세라믹학회지
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• 제32권3호
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• pp.321-330
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• 1995

Homogeneous and monolithic TiO2-SiO2 binary aerogels were prepared by supercritical drying. Optical transparency was increased with adding acid catalyst during two step hydrolysis and with decreasing water content. These differences in optical transparency were related to microstructures of gel network formed through polycondensation reaction during supercritical drying process, rather than the final composition of aerogel.

• 한국표면공학회지
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• 제52권4호
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• 한국세라믹학회지
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• 제16권4호
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• pp.206-212
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• 1979

The phase relations and microstructure appeared at 1700℃ in a system of Si3N4-Al2O3-SiO2 were studied. The samples were pressurelessly sintered at 1700℃ for 1hr and reheated at 1600℃ for 1hr under nitrogen atmosphere. The compounds formed were identified by X-ray diffraction method and the microstrues were observed by SEM. The stable phases appeared in this system were X-phase, Si2ON2, β'-Si3N4 and Mullite. From the results of those experiments, it was concluded that the X-phase has very close composition to that proposed by G, K. Layden, Si3Al6O12N2. SEM photographs showed that Si2ON2 was a plate phase and X-phase was a rectagular plate phase.

• 한국세라믹학회지
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• 제32권9호
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• pp.1033-1039
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• 1995

The current experiment has quantitatively investigated the effect of the content of CaO and SiO2 on the microstructure, density, electrical resistivity, power loss and initial permeability of manganese zinc ferrites. The density increased initially with CaO and SiO2 content and the further addition showed an adverse effect. The excess addition of CaO and SiO2 developed a discontinuous grain growth with numerous pores inside grains and lowered the electrical resistivity. The initial permeability decreased with increasing the content of SiO2. The samples with relatively low power loss showed that half of the total loss at 10$0^{\circ}C$, 100 kHz and 2000 Gauss was due to the eddy current loss.

• 한국세라믹학회지
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• 제35권9호
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• pp.911-916
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• 1998

By using {{{{ { { {Y }_{3 }Al }_{5 }O }_{12 } }} (YAG) and SiO2 as sintering additives the effect of the composition of sintering ad-ditives on microstructure and mechanical properties of the hog-pressed and subsequently annealed SiC ma-terials were investigated. Microstructures of sintered and annealed materials were strongly dependent onthe composition of sintering additives. The average diameter and volume fraction of elongated grains in an-nealed materials increased with the SiO2/YAg ratio while the fracture toughness increased with the SiO2/YAg ratio. The average MPa.{{{{ { m}^{1/2 } }} respectively. Typical strength and fracture toughness of an annealed material with SiO2/YAg ra-tionof 0.67 were 371 MPa and 5.6 MPa.{{{{ { m}^{1/2 } }} respectively.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2006년 창립20주년기념 정기학술대회 및 국제워크샵
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• pp.25-28
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• 2006

This paper dealt with the LPS process for the development of high performance SiC materials, based on the detailed analysis of their microstructure and mechanical properties. The submicron SiC powder was used for the fabrication of LPS-SiC materials. A mixture of $Al_2O_3$ and $Y_2O_3$ particles was also used as a sintering additive in the LPS process. LPS-SiC materials were fabricated at different temperatures, using various additive composition ratio ($Al_2O_3/Y_2O_3$). The total amount of additive materials ($Al_2O_3+Y_2O_3$) was fixed as 10 wt%. The characterization Of LPS-SiC materials was investigated by means of SEM, XRD and three point bending test. The LPS-SiC material represented a relative density of about 98 % and a flexural strength of about 800MPa, when it was fabricated at the temperature of $1820^{\circ}C$ and the additive compositional ratio of 1.5.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1361-1363
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• 1997

Zinc oxide-based MOV was fabricated with $SiO_2$ additive ranging from 0.5 to 4.0 mol%, and the microstructure and electrical characteristics were investigated. $Zn_2SiO_4$ phase formed by $SiO_2$ additive was distributed at ZnO grains, grain boundaries, and multiple grain junctions. As the content of $SiO_2$ additive increases, average grain size decreased from 40.6 to $26.9{\mu}m$ due to the Pinning effect by $Zn_2SiO_4$ at grain boundaries Breakdown voltage and nonlinear exponent increased, and leakage current decreased in the range of $11.2{\sim}6.14{\mu}A$ with an increasing $SiO_2$. Donor concentration and interface state density decreased, and barrier height increased in the range of $0.71{\sim}1.04eV$ with an increasing $SiO_2$. While, as the content of $SiO_2$ additive, apparent dielectric constant decreased, peak frequency of dissipation factor decreased in the range of $6.45{\times}10^5{\sim}3.00{\times}10^5Hz$, and dissipation peak was $0.31{\sim}0.22$ at Peak frequency.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.57-58
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• 1993

• 한국재료학회지
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• 제26권4호
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• pp.182-186
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• 2016

Zircon, having excellent thermal, chemical, and mechanical properties, is utilized in refractory materials, electronic materials, chemical machines, structural materials, etc. However, zircon generally shows thermal dissociation to zirconia($ZrO_2$) and silica($SiO_2$) around the sintering temperature of $1540^{\circ}C$, and when zircon particles are small and impurities are present, thermal dissociation is known to occur at around $1100^{\circ}C$. This reduces the mechanical properties of $ZrSiO_4$. In this research, the effect of adding $SiO_2$ and 3Y-TZP to $ZrSiO_4$ has been studied in order to suppress dissociation and improve the mechanical properties. Addition of $SiO_2$ suppressed the dissociation of $ZrSiO_4$ at lower temperatures. It also enabled optimum packing between the particles, resulting in a dense microstructure and good mechanical properties. When 3Y-TZP was added, recombination with the dissociated $SiO_2$ resulted in good mechanical properties by suppressing the generation of pores and the densification of the microstructure.