• Advances in concrete construction
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• 제11권1호
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• pp.81-88
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• 2021

Rice Husk Ash (RHA) geopolymer paste activated by sodium aluminate were characterized by X-ray diffractogram (XRD), scanning electron microscope (SEM), energy dispersion X-Ray analysis (EDAX)and fourier transform infrared spectroscopy (FTIR). Five series of RHA geopolymer specimens were prepared by varying the Si/Al ratio as 1.5, 2.0, 2.5, 3.0 and 3.5. The paper focuses on the correlation of microstructure with hardened state parameters like bulk density, apparent porosity, sorptivity, water absorption and compressive strength. XRD analysis peaks indicates quartz, cristobalite and gibbsite for raw RHA and new peaks corresponding to Zeolite A in geopolymer specimens. In general, SEM micrographs show interconnected pores and loosely packed geopolymer matrix except for specimens made with Si/Al of 2.0 which exhibited comparatively better matrix. Incorporation of Al from sodium aluminate were confirmed with the stretching and bending vibration of Si-O-Si and O-Si-O observations from the FTIR analysis of geopolymer specimen. The dense microstructure of SA2.0 correlate into better performance in terms of 28 days maximum compressive strength of 16.96 MPa and minimum for porosity, absorption and sorptivity among the specimens. However, due to the higher water demand to make the paste workable, the value of porosity, absorption and sorptivity were reportedly higher as compared with other geopolymer systems. Correlation regression equations were proposed to validate the interrelation between physical parameters and mechanical strength. RHA geopolymer shows comparatively lower compressive strength as compared to Fly ash geopolymer.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• 한국포장학회지
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• 제11권1호
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• pp.53-58
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• 2005

Titanoalumino silicalite (TAS) was prepared hydrothermally, and the effects of synthesis parameters such as silica/alumina sources, $SiO_2/TiO_2$ ratio, and aging treatment were investigated. The structure, crystal size, and shape were examined by XRD and SEM, and the extent of titanium incorporation into the zeolite framework was examined using UV-vis DRS spectroscopy. For TAS preparation, aging of ca. 24h was essential, and the faster crystallization rates were achieved with Cab-O-Sil than with Ludox or TEOS as a silica source. In addition, the higher crystallinity and faster crystallization rate were obtained using sodium aluminate as an aluminum source.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.19-19
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• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

• Corrosion Science and Technology
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• 제15권3호
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• pp.129-134
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• 2016

The effects of Ti on the high temperature oxidation of Ni-based superalloys were investigated by cyclic oxidation at $850^{\circ}C$ and $1000^{\circ}C$. The oxide scale formed at $850^{\circ}C$ consists of $Cr_2O_3$, $Al_2O_3$, and $NiCr_2O_4$ layers, while a continuous $Al_2O_3$ layer was formed at $1000^{\circ}C$. The oxidation rate of the alloy with higher Ti content was higher than the alloy with less Ti content at $850^{\circ}C$, possibly due to the increase in the metal vacancy concentration in the $Cr_2O_3$ layer involved by incorporation of $Ti^{4+}$. However, Ti improved the oxidation resistance of the superalloy at $1000^{\circ}C$ by reducing oxygen vacancy concentration in $Al_2O_3$ layer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• 한국표면공학회지
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• 제39권2호
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• pp.82-86
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• 2006

Diamond films were deposited on 10.0$\times$10.0$mm^2$ pretreated (100) Si substrate using $CH_4$, $H_2$ and $O_2$ source gases in a horizontal-type microwave plasma enhanced chemical vapor deposition system. We introduced a cyclic on/off modulation of $CH_4$ and/or $O_2$ flows is a function of the reaction time during the initial deposition stage. Surface morphology and diamond quality of the films were investigated as a function of the different cyclic modulation process of the source gases flows: For the enhancement of the nucleation density, there is an optimal process for the incorporation of oxygen. Diamond qualities of the films were improved by introducing oxygen gas during the initial deposition stage.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• 콘크리트학회논문집
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• 제28권2호
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• pp.205-212
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• 2016

본 연구는 고로슬래그 미분말(GGBFS)의 구성성분이 알칼리 활성화 슬래그 시멘트(AASC)에 미치는 영향에 관한 연구이다. 산화알루미늄($Al_2O_3$)을 고로슬래그 미분말 중량에 대해 2~16% 혼합하였다. 활성화제는 KOH를 사용하였고, 물-결합재 비는 0.5이다. 강도 향상은 $Al_2O_3$ 혼합률이 증가함에 따라 수화반응의 향상으로 나타난다. 재령 28일에서 가장 높은 강도는 2M KOH + 16% $Al_2O_3$와 4M KOH + 16% $Al_2O_3$일 때이고 각각 30.8 MPa과 45.2 MPa이였다. 재령 28일에서 2M KOH + 16% $Al_2O_3$의 강도는 2M KOH ($Al_2O_3$ 미첨가) 보다 46% 향상되었다. 또한 4M KOH + 16% $Al_2O_3$의 강도는 4M KOH ($Al_2O_3$ 미첨가) 보다 44% 향상되었다. 결합재에서 $Al_2O_3$ 혼합률이 증가함에 따라 모든 재령에서 강도가 증가하였다. AASC에서 초음파속도(UPV)는 강도와 유사한 경향을 나타내었지만 흡수율과 공극률은 $Al_2O_3$의 혼합률이 증가함에 따라 강도경향과 상반된 경향을 나타내었다. $Al_2O_3$ 혼합률이 높은 시험체에서 반응생성물질의 Al/Ca와 Al/Si가 증가하였다. SEM과 EDX 분석을 통해 $Al_2O_3$의 혼합은 더욱 치밀한 미세조직을 형성한 것을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.41.1-41.1
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• 2009

Aerosol Deposition (AD) is anovel way to fabricate bioactive ceramic coatings in biomedical implants and prostheses applications. In the present work, silicon-substituted hydroxyapatite (HA) coatings on commercially pure titanium were prepared by aerosol deposition using Si-HA powders. The incorporation of silicon in the HA lattice is known to improve the bioactivity of the HA, makingsilicon-substitute HA an attractive alternative to pure HA in biomedical applications. Si-HA powders with the chemical formula $Ca_{10}(PO_4)_6-x(SiO_4)x(OH)_2-x$, having silicon contents up to x=0.5 (1.4 wt%), were synthesized by solid-state reaction of $Ca_2P_2O_7$, $CaCO_3$, and $SiO_2$. The Si-HA powders were characterized by X-ray diffraction (XRD), X-ray fluorescence spectrometry (XRF), and Fourier transform infrared spectroscopy(FT-IR). The corresponding coatings were also analyzed by XRD, scanning electron microscopy (SEM), and electron probe microanalyzer (EPMA). The results revealed that a single-phase Si-HA was obtained without any secondary phases such as $\alpha$- or $\beta$-tricalcium phosphate (TCP) for both the powders and the coatings.The Si-HA coating was about $5\;{\mu}m$ thick, had a densemicrostructure with no cracks or pores. In addition, the proliferation and alkaline phosphatase (ALP) activity of MC3T3-E1 preosteoblast cells grown on the Si-HA coatings were significantly higher than those on the bare Ti and pure HA coating. These results revealed the stimulatory effects induced by siliconsubstitution on the cellular response to the HA coating.