• The Journal of the Petrological Society of Korea
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• v.19 no.1
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• pp.67-87
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• 2010

This article deal with petrotectonic setting and petrogenesis from petrography and chemical analyses of the Cretaceous volcanic and intrusive rocks in the Cheolwon basin. The volcanic rocks are composed of basalts in Gungpyeong Formation, Geumhaksan Andesite, and rhyolitic rocks (Dongmakgol Tuff, Rhyolite and Jijangbong Tuff), and intrusive rocks, Bojangsan Andesite, granite porphyry and dikes. According to petrochemistry, these rocks represent medium-K to high-K basalt, andesite and rhyolite series that belong to calc-alkaline series, and generally show linear compositional variations of major and trace elements with increase in $SiO_2$ contents, on many Harker diagrams. The incompatible and rare earth elements are characterized by high enrichments than MORB, and gradually high LREE/HREE fractionation and sharp Eu negative anomaly with late strata, on spider diagram and REE pattern. Some trace elements exhibit a continental arc of various volcanic arcs or orogenic suites among destructive plate margins on tectonic discriminant diagrams. These petrochemical data suggest that the basalts may have originated from basaltic calc-alkaline magma of continental arc that produced from a partial melt of upper mantle by supplying some aqueous fluids from a oceanic crust slab under the subduction environment. The andesites and rhyolites may have been evolved from the basaltic magma with fractional crystallization with contamination of some crustal materials. Each volcanic rock may have been respectively erupted from the chamber that differentiated magmas rose sequentially into shallower levels equivalenced at their densities.

• Korean Journal of Materials Research
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• v.12 no.10
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• pp.814-819
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• 2002

TiN and TaN films as electrode materials of reactive sputtered $Ta_2$$O_{5}$ were prepared by sputtering to compare their thermal stabilities with $Ta_2$$O_{5}$ The microstructural change of $Ta_2$$O_{5}$ films with annealing was also investigated. As- deposited $Ta_2$$O_{5}$ film on $SiO_2$ was amorphous and annealing of 80$0^{\circ}C$ for 30 min made it transform to $\beta$-Ta$_2$O$_{5}$ crystalline which contains amorphous particles with the size of a few nm. Crystallization temperature of Ta$_2$Ta_2$$O_{5}$ on TaN is higher than that on TiN electrode. The interface between TaN and Ta$_2$O$_{5}$ maintained stably even after vacuum annealing up to $800^{\circ}C$ for 1 hr, but TiN interacted with $Ta_2$$_O{5}$ and so interdiffusion between TiN and $Ta_2$$O_{5}$ occurred by vacuum annealing of 80$0^{\circ}C$ for 1 hr. It indicates that TaN is thermally more stable with $Ta_2$$O_{5}$ than TiN.N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.28-28
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• 2010

This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.1 no.1
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• pp.12-16
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• 1991

The effect of annealing on the magnetic properties and the microstructures of the amorphous $Fe_{76-x}Cu_1Mo_xSi_{14}B_9$(x=2,3) alloys were investigated. When annealed at 500${^{\circ}C}$ for 1hr, $8{\sim}9{\times}10^3$ of the effective permeability and 3~4 A/m of the coercive force were achieved upon crystallization to $\alpha$-Fe phase. And the average diameter of the $\alpha$-Fe grains was about 20nm. For the nanovrystalline ferromagnets. the fine grain size is the important requirement to obtain a good soft magnetic property. In this work, in order to get the finer grain size of $\alpha$-Fe phase, two-step annealing treatment was given. That is, following the low-temperature at $400{^{\circ}C}$ for 1~3hr, the high-temperature annealing at $500{^{\circ}C}$ for 1hr was carried out. As the low-temperature annealing time increased, the effective permeability increased to $1.2{\sim}1.7{\times}10^4$ and the coercive force decreased to about 2 A/m. And the grain size was observed to be smaller than 10nm. The increased permeability and the decreased coercive force were attributed to the reduced average crystalline anisotropy by the refinement of $\alpha$-Fe(Si) grains.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• Macromolecular Research
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• v.17 no.5
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• pp.296-300
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• 2009

Ethylene-1-butene copolymers were prepared with $SiO_2$-supported $TiCl_4$ catalyst by changing of 1-butene/ethylene molar ratio in feed, and the resulting copolymers were analyzed using temperature rising elution fractionation (TREF) and crystallization fractionation (Crystaf) methods to investigated the influence of $C_4/C_2$ molar ratio in feed on chemical compositional distribution and other parameters such as molecular weight and its distribution. TREF analysis showed that the copolymers had a broad and bimodal chemical compositional distribution (CCD) regardless of the content of 1-butene in the copolymer. The chemical composition was in the range of 5 to 55 branches per 1,000 carbons for all copolymers prepared in the study. Furthermore, the broader CCD was revealed for the copolymers having the higher content of 1-butene. Crystaf analysis did not showed a bimodal CCD for the copolymers having the 1-butene content of less than 5.1 wt%. The lower crytalline part having 1-butene content in Crystaf analysis was less than of TREF analysis.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.715-722
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• 1994

Thermochromic $Vo_{2}$ thin films for "smart windows" were prepared by electron beam evaporationmethod on a glass substrate and spectral transmittances were examined by spectrophotometer. Substratetemperature of $300^{\circ}C$ and annealing temperature of $400^{\circ}C$ were found to be effective to give athermochromism on $Vo_{2}$ thin film due to the crystallization of the thin film. Furthermore, annealing of$Vo_{2}$ thin film affected the spectral transmittance and reduced the transmittance significantly at wavelengthbelow 500nm.$V_{0.95}W_{0.05}O_{2}$ thin film doped by 5 atomic percent of W showed semiconductor-metal transition around 0$0^{\circ}V_{0.995}W_{0.005}O_{2}$thin film which contains 0.5 atomic percent Sn showed therrnochrornisrn when it was depositedat substrate temperature of $300^{\circ}C$ and annealed at $450^{\circ}C$ for 5 hours in argon gas. The transitiontemperature of the $V_{0.995}W_{0.005}O_{2}$ thin film was found to be about $25^{\circ}C$ and showed some hysterisis. and showed some hysterisis.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.381-386
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• 2010

Some basic properties of inorganic coatings hardened by the room temperature reaction with alkalies were examined. The coating paste was prepared from the powders in the system $Al_2O_3-SiO_2$-CaO using blast furnace slag, fly ash and amorphous ceramic fiber after mixing with a solution of sodium hydroxide and water glass. The mineralogical and morphological examinations were performed for the coatings prepared at room temperature and after heating to $1200^{\circ}C$ respectively. The binding force of the coating hardened at room temperature was caused by the formation of fairly dense matrix mainly composed of oyelite-containing amorphous phase formed by the reaction between blast furnace slag and alkali solution. At the temperature, fly ash and ceramic fiber was not reacted but imbedded in the binding phase, giving the fluidity to the paste and reinforcing the coating respectively. During heating up to $1200^{\circ}C$, instead of a break in the coating, anorthite and gehlenite was crystallized out by the reaction among the binding phase and unreacted components in ternary system. The crystallization of these minerals revealed to be a reason that the coating maintains dense morphology after heating. The maintenance of binding force after heat treatment is seemed to be also caused by the formation of welldispersed fiber-like mineral phase which is originated from the shape of the amorphous ceramic fiber used as a raw materials.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.239-245
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• 1995

Mn-Zn ferrite thin films were deposited on $SiO_2(1000 \AA)/Si(100)$ by ion beam sputtering using a single ion source. A mosaic target consisting of a single crystal(ll0) Mn-Zn ferrite with a Fe metal strip on it was used. As-deposited films without oxygen gas flow have a wiistite structure due to oxygen deficiencies, which originated from the extra metal atoms sputtered from the metal strips during deposition. The as-deposited films with oxygen gas flow, however, have a spinel structure with (111) preferred orientation. The crystallization of thin films was maximized at the ion beam extraction voltage of 2.lkV, at which the deposited films are bombarded appropriately by the energetic secondary ions reflected from the target. As the extraction voltage increased or decreased from the optimum value, the crystallinity of thin films becomes poor owing to a weak and severe bombardment of the secondary ions, respectively. Crystallization due to the bombardment of the secondary ions was also maximized at the beam incidence angle of $55^{\circ}$. The as-deposited ferrite thin films with a spinel structure showed ferrimagnetism and had an in-plane magnetization easy axis.