• 한국세라믹학회지
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• 제30권4호
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• pp.289-298
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• 1993

Properties in terms of the variation of the glass compositions, which were density (p), molar volume(Vm), atom/ion packing density (Dp), refractive index (nD), transformation temperature (Tg), dilatometric softening point (Td), thermal expansion coefficient (α), Young's modulus (E), and knoop hardness (KHN) were investigated in CaO-SiO2 glasses and CaO-P2O5-SiO2 glasses containing less than 10mole% of P2O5. Those properties were measured by density measurement kit, Abbe refractometer, dilatometer, ultrasonic pulse echo equipment, and micro hardness tester. When CaO content was increased in CaO-SiO2 glasses, p, Dp, nD, Tg, Td, α, E and KHN were increased, while Vm was decreased. When P2O5 was added to the CaO-SiO2 glasses with constant CaO/SiO2 ratio as 1.07, p, Dp, nD, Tg, Td, α, E and KHN were decreased, while Vm was increased. When the amount of P2O5 in glasses was kept constant, the changes of the properties with variation of CaO content in the CaO-P2O5-SiO2 glasses were very similar to those of CaO-SiO2 glasses. These phenomena could be explained by the structural role of P2O5 in the CaO-P2O5-SiO2 glasses, which was polymerization of siicate structures and resulted in [PO4] monomer structure in glasses. Due to this structural characteristics, the bond strength and packing density were changed with compositions. Proportional relationships between 1) np and Dp, 2) Tg, Td, α and CaO content, 3) E and Vm-1, and 4) KHN and P2O5 content were evaluated in this investigation.

• Korean Chemical Engineering Research
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• 제56권4호
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• pp.600-606
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• 2018

다양한 Si/Al 몰비를 지닌 MTT 제올라이트를 합성하여 methanol-to-olefin(MTO) 반응에서 촉매의 산성도가 미치는 영향을 조사하였다. Si/Al 몰비를 조절하기 위해 N,N,N',N'-테트라메틸-1,3-디아미노프로판을 구조유도물질(SDA)로 사용하였으며, 알루민산나트륨의 함량을 달리하여 $20SiO_2$ : 30SDA : x (=0.25~1.25)$NaAlO_2$ : 2NaOH : $624H_2O$ 조성으로 모액을 제조한 후 433 K에서 4일 동안 수열 합성하였다. 알루민산나트륨의 함량이 감소함에 따라 MTT 제올라이트의 입자 크기가 증가하였으며 또한 산점의 양도 감소하였다. 제조한 MTT 제올라이트의 촉매 활성을 평가하기 위해 673 K에서 공간속도(WHSV)가 $1.2h^{-1}$인 조건으로 MTO 반응을 수행한 결과, Si/Al 몰비가 24인 H-MTT (1.00Al) 촉매가 900분까지 90% 이상의 전환율을 유지함을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.123-124
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• 2011

플라즈마 화학적 기상 증착(plasma enhanced chemical vapor deposition)공정 중 NH3 gas flow rate, RF power, SiH4 gas flow rate을 고정시키고 N2O gas flow rate을 0 sccm부터 250 sccm까지 변화시키는 조건 하에 SiON박막을 증착한 후 그 투과율, 굴절률을 측정하고 분석하였다. N2O gas flow rate조건별 시편들은 증착율을 계산하여 350 nm 두께로 동일하게 SiON을 증착하였고, borofloat위에 SiON을 증착한 샘플은 투과율을, 실리콘기판 위에 SiON을 증착한 샘플로는 굴절률을 측정하였다. 투과율의 경우는 UV/Vis spectrometer를 이용해 633 nm, 1550 nm 두 가지 파장 대 모두에서 N2O gas flow rate이 가장 큰 250 sccm일 때 가장 높은 것을 알 수 있었고 N2O gas flow rate이 낮아질수록 투과율 또한 작아지는 경향을 보였다. 굴절률은 ellipsometer를 이용해 측정하였으며 633 nm 파장에서 N2O gas flow rate가 가장 낮은 0 sccm일 때 굴절률이 가장 큰 값을 가지고 N2O gas flow rate이 커질수록 굴절률은 지수함수적으로 감소되었다(n=1.837~1.494). 이는 N2O gas flow rate이 낮을수록 SiN계열에 커질수록 SiO2계열에 가까워지는 현상으로 이해된다. 이러한 실험분석 결과는 향후 실리카 도파로의 설계 및 최적화를 위해 사용될 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• 한국세라믹학회지
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• 제28권8호
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• pp.625-625
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• 1991

2wt% Al2O3와 10wt% Al2O3를 첨가하여 2000℃와 2050℃에서 가압소결된 SiC를 37 mol% NaCl과 63 mol% Na2SO4 Salt에 의해 60분까지 hot corrosion을 시켰다. 부식은 SiC표면에 형성된 SiO2층이 Na2O 이온에 의한 basic dissolution에 이해 일어남이 관찰되었고 10wt%의 Al2O3가 함유된 시편은 입계에 Al2O3를 함유한 입계상의 존재로 2wt% Al2O3가 함유된 시편보다 낮은 corrosion rate를 나타냈다. SiC와 산화물층 사이에서 gas bubble의 형성이 관찰되었고 이 gas bubble이 산화물층을 심하게 파괴하기 전까지 corrosion rate은 linear하게 변했다. 부식 양상은 개기공과 입계에서 pitting corrosion에 의해 시작되었다.

• Tribology and Lubricants
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• 제11권4호
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• pp.35-44
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• 1995

Within the practical ranges of speed and load, the formation of transfer films and the consequent effects on the friction and wear behavior of ceramic materials during repeated pass sliding contact were studied. These tests were done using $Al_{2}O_{3}$, SiC and $Si_{3}N_{4}$ with the cylinder-on-flat test configuration. The three pairings behaved differently, even if some wear mechanisms were common to the three systems. The $Al_{2}O_{3}$ pair showed the least wear in overall conditions, followed by the $Si_{3}N_{4}$ pair in harder sliding conditions. The wear of SiC was very high at severe loading. In case of $AL_{2}O_{3}$ and $Si_{3}N_{4}$, the transfer film, whenever formed, is strongly attached, enough to resist being wiped off by the slider. As a consequence, the formation of this f'fim leads to a decrease in the wear rate because of the protecting role of the film. The presence of the film at the contact interface also results in high friction. Also, the wear rate of each ceramics is related to the frictional power provided by load, speed and friction.

• 대한기계학회논문집A
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• 제34권11호
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• pp.1715-1720
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• 2010

본 연구에서는 장균열을 가지는 Si3N4 세라믹스의 균열 길이와 코팅 방법에 따르는 균열 치유 특성을 규명하였다. 약 $100{\sim}500\;{\mu}m$의 균열 길이는 24.5 ~ 98 N의 하중을 사용하여 비커스 압자를 이용하여 만들었다. 24.5 N의 하중으로 만든 단균열의 경우, $SiO_2$ 나노 콜로이드 코팅된 균열재는 모재보다 약 140 % 증가한 가장 높은 굽힘 강도를 보였지만, 장균열은 모재보다 낮은 굽힘 강도를 나타내었다. 그러나 대부분의 장균열 시험편의 굽힘 강도는 균열재보다 약간 증가하였다. 이러한 결과에 따라서, 복수 압입에 의한 $Si_3N_4$ 세라믹스의 균열 치유 특성을 코팅방법에 따라 연구하였다. 장균열 시험편의 가장 효과적인 코팅 방법은 정수압코팅방법이었다.

• 한국공작기계학회논문집
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• 제11권3호
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• pp.86-92
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• 2002

In this study, experiments were carried out to investigate the characteristics of grinding and wear process of diamond wheel far ceramic materials. Normal component of grinding resistance of $Al_2$O$_3$ was less then that of $Si_3 N_4$ and $ZrO_2$. This seems to be the characteristics of ceramic tools on work pieces both of high hardness. For the case of $Si_3 N_4$ and $ZrO_2$, as the mesh number of wheel increases, the surface roughness decreases. For the case of $Al_2 O_3$, the surface roughness does not decreases. Specific binding energy decreases as the material removal rate per unit time increases. For the case of $Si_3 N_4$ and $ZrO_2$, grinding is carried out by abrasive wear processes. For the case of $Al_2 O_3$, grinding is carried out by grain shedding process due to brittle fracture.

• 한국세라믹학회지
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• 제29권5호
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• pp.347-356
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• 1992

Various kaolin samples with different alumina content were prepared from calcined admixture of kaolin and ammonium sulfate by varying the treatment time in sulfuric acid. Samples were nitridated under N2 or N2-H2 atmosphere with changing the amount of added carbon, the reaction time and temperature. As the alumina content lowered, the size of kaolin particles decreased and the specific surface area increased. XRD analysis indicated that ${\alpha}$-quartz remained by decomposition of halloysite and meta-halloysite. Experimental results of nitridation behavior are summerized as follows; 1) Nitridation under N2 atmosphere. With the increase of C/SiO2 ratio and with the decrease of Al2O3 content, disappearance of XRD pattern peaks of mullite, ${\alpha}$-quartz and ${\alpha}$-Al2O3 were accelerated at 1300$^{\circ}C$. SiC was the main phase in the reaction product of acid-treated kaolin samples nitridated at 1300$^{\circ}C$ for 10 hours regardless of C/SiO2 ratio. But the XRD peak intensities of ${\beta}$-Si3N4, ${\beta}$-sialon and SiC did not show much difference when untreated raw kaolin was fired at the same condition. When the ratio of C/SiO2 was 3.5, ${\beta}$-sialon and ${\beta}$-Si3N4 existed in the reaction product of about 22% alumina containing kaolin sample fired at 1350$^{\circ}C$ for 7 hours. Only ${\beta}$-sialon existed in the same sample fired at 1400$^{\circ}C$ for 10 hours. ${\beta}$-sialon was obtained from all of the acid-treated kaolin samples fired at 1400$^{\circ}C$ for 40 hours, but AlN and SiC remained in the untreated kaolin sample. Z value of the ${\beta}$-sialon obtained from the 22% alumina containing kaolin sample fired at 1400$^{\circ}C$ for 40 hours was about 1.3(XRD) and 1.5(EDS). 2) Nitridation under 80N2+2OH2 mixed gas atmosphere with the C/SiO2 ratio of 1 Mullite was not found, but ${\alpha}$-Si3N4, and ${\beta}$-sialon were present in the reaction product of about 22% alumina containing kaolin sample fired at 1300$^{\circ}C$ for 10 hours. When untreated kaolin sample was nitridated at the same condition, mullite remained. AlN and SiC were not found in the reaction product of about 22% alumina containing kaolin sample fired at 1350$^{\circ}C$ for 5 hours. On the other hand, AlN and SiC remained in the product of untreated kaolin fired at the same condition.

• 한국표면공학회지
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• 제35권3호
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• pp.133-140
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• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.