• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.305-308
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• 2006

We have studied liquid crystal (LC) aligning capabilities for homeotropic alignment and the control of tilt angles on the $SiO_{x}$ thin film by electron beam evaporation method. A high tilt angle of about $86.5^{\circ}$ was obtained, and also the suitable tilt angle of the NLC on the $SiO_{x}$ thin film at $20{\sim}50\;nm$ thickness with e-beam evaporation can be achieved. The uniform LC alignment on the $SiO_{x}$ thin film surfaces with electron beam evaporation can be achieved. It is considerated that the LC alignment on the $SiO_{x}$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_{x}$ thin film surface created by evaporation.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.274-277
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• 2007

In this study, liquid crystal(LC) aligning capabilities for homeotropic alignment on the $SiO_x$ thin film by electron beam evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the nematic liquid crystal(NLC) treated on $SiO_x$ thin film were investigated. A high pretilt angle of about $86.5^{\circ}$ was obtained, and also the suitable pretilt angle of the NLC on the $SiO_x$ thin film at $10{\sim}50nm$ thickness with e-beam evaporation can be achieved. The uniform LC alignment and good thermal stabilities on the $SiO_x$ thin film surfaces with electron beam evaporation can be achieved. It is considered that the LC alignment on the $SiO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_x$ thin film surface created by evaporation.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.21-25
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• 2006

In this study, liquid crystal (LC) aligning properties for homeotropic alignment on the $SiO_x$ thin film by electron beam evaporation method with electron beam system in accordance with the evaporation angles were investigated. Also, the control of pretilt angles homeotropic aligned LC on $SiO_x$ thin film as the function of the evaporation angles were studied. The uniform vertical LC alignment on the $SiO_x$ thin film surfaces with electron beam evaporation was achieved with all of the thin film angle conditions. It is considerated that the LC alignment on the $SiO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_x$ thin film surface created by evaporation. The values of the pretilt angles according to the evaporation angle were from about $0.7^{\circ}$ to about $3.4^{\circ}$. The highest pretilt angles of about $3.4^{\circ}$ in aligned NLC on the $SiO_x$ thin film surfaces by electron beam evaporation were measured under the condition of $45^{\circ}$. Also, good LC alignment states on the treated $SiO_x$ thin film layer by electron beam evaporation were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment on the $SiO_x$ thin film by electron beam evaporation can be achieved.

• Journal of Surface Science and Engineering
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• v.50 no.5
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• pp.345-351
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• 2017

A double-layered anti-reflective coating with hydrophilic/abrasion-resistant properties was studied using anatase titanium dioxide($TiO_2$) and silicon oxycarbide($SiO_xC_y$) thin film. $TiO_2$ and $SiO_xC_y$ thin films were sequentially deposited on a glass substrate by DC sputtering and PECVD, respectively. The optical properties were measured by UV-Vis-NIR spectrophotometer. The abrasion-resistance and the hydrophilicity were observed by a taber abrasion tester and a contact angle analyzer, respectively. The $TiO_2/SiO_xC_y$ double-layer thin film had an average transmittance of 91.3%, which was improved by 10% in the visible light region (400 to 800 nm) than that of the $TiO_2$ single-layer thin film. The contact angle of $TiO_2/SiO_xC_y$ film was $6.9^{\circ}$ right after UV exposure. After 9 days from the exposure, the contact angle was $10.2^{\circ}$, which was $33^{\circ}$ lower than that of the $TiO_2$ single-layer film. By the abrasion test, $SiO_xC_y$ film showed a superior abrasion-resistance to the $TiO_2$ film. Consequently, the $TiO_2/SiO_xC_y$ double-layer film has achieved superior anti-reflection, hydrophilicity, and abrasion resistance over the $TiO_2$ or $SiO_xC_y$ single-layer film.

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.91-92
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• 2006

Liquid crystal (LC) alignment on $a-SiO_x$ thin film was investigated by means of X-ray photoemission spectroscopy and optical transmittance as we varied the deposition temperature and the target-to-substrate distance. LC molecules can be aligned vertically on $a-SiO_x$ film when the stoichiometric parameter x of $a-SiO_x$ is smaller than 1.56, but they can be aligned homogeneously when x is larger than 1.56. We also found that whether liquid crystals can be aligned vertically or homogeneously on $a-SiO_x$ film can be predicted simply by measuring the change in optical transmittance by deposition of $a-SiO_x$ thin film layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.66-67
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• 2006

We studied nematic liquid crystal (NLC) alignment effect on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. Pretilt angle and thermal stability characteristic as well as NLC alignment effect were investigated. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and pretilt angle was about $90^{\circ}$. The thermal stability of the $SiO_x$ thin film was sustained by $200^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.451-452
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• 2006

We studied the electro-optical characteristic of vertical alignment liquid crystal display(VA-LCD) on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. LC alignment characteristic showed homeotropic alignment, and pretilt angle was about $90^{\circ}$. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and the electro-optical characteristic of the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system was excellent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.311-312
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• 2006

We studied homeotropic alignment effect for a nematic liquid crystal (NLC) on the $SiO_x$, thin film irradiated by the new ion beam method $SiO_x$ thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) and were treated by the DuoPIGatron ion source. A uniform liquid crystal alignment effect was achieved over 2100 eV ion beam energy. Tilt angle were about $90^{\circ}$ and were not affected by various ion beam energy.

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.215-218
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• 2007

In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.