• Current Photovoltaic Research
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• v.5 no.2
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• pp.63-67
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• 2017

Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.

• Journal of the Korean Chemical Society
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• v.55 no.1
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• pp.81-85
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• 2011

$V_{0.9}Sb_{0.1}O_x$ systems, bulk and deposited on different supports (five types of $\gamma$-aluminas, $\alpha$-alumina, silica-alumina, silica gel, magnesium oxide), have been tested in the oxidative dehydrogenation (ODH) of iso-butane. Catalytic performance of VSb oxides has shown to be highly dependent on the support and the nature of the support decreasing in a series: $\gamma$-$Al_2O_3$ > $\alpha$-$Al_2O_3$ > Si-Al-O > $SiO_2$ $\approx$ MgO $\gg$ unsupported. Variation of the V-Sb-O-loading in the studied range of coverage (0.5-2 theoretical monolayer) only slightly influences the catalysts' activity and selectivity. The best catalytic performance of $\gamma$-alumina-supported $V_{0.9}Sb_{0.1}O_x$ systems can be explained by the optimal surface interaction between support and supported components resulting in the formation of well-spread amorphous active $VO_x$-component with vanadium in a high oxidation state.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.322-326
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• 1999

We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

• Bulletin of the Korean Chemical Society
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• v.29 no.12
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• pp.2325-2326
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• 2008

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.205-206
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• 2012

$InSbO_4$ (Indium antimony oxide) 박막을 RF 마그네트론 스퍼터링법을 이용하여 $SiO_2$가 코팅된 Si wafer ($SiO_2/Si$) 기판 또는 $400^{\circ}C$에서 융해된 석영 유리 (silica glass) 기판 위에 증착시켰다. 고결정성과 화학양론의 $InSbO_4$ 막을 증착시키기에 최적화된 조성의 $In_{0.2x}Sb_{0.3x}O_x$ 타겟을 이용하여 Ar과 $O_2$ 혼합 가스 분위기에서 스퍼터링 증착을 수행하였다. $InSbO_4$ 막은 가시광 영역에서 80%이상의 투과도를 보였고, $400^{\circ}C$에서 $1100^{\circ}C$사이의 어닐링 온도에서는 $InSbO_4$ 막의 전기적 성질이 높은 고온 내구성을 가지는 것을 알 수 있었다. 그러나 $1200^{\circ}C$ 이상의 어닐링 온도에서는 새로운 $Sb_2O_4$ 상의 분리로 인해 $InSbO_4$ 막의 비저항이 급격히 증가하였다.

• Bulletin of the Korean Chemical Society
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• v.17 no.7
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• pp.631-637
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• 1996

The structures of fully dehydrated Ca2+- and Rb+-exchanged zeolite X, Ca31Rb30Si100Al92O384(Ca31Rb30-X; a=25.009(1) Å) and Ca28Rb36Si100Al92O384(Ca28Rb36-X; a=24.977(1) Å), have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd&bar{3} at 21(1) ℃. Their structures were refined to the final error indices R1=0.048 and R2=0.041 with 236 reflections for Ca31Rb30-X, and R1=0.052 and R2=0.043 with 313 reflections for Ca28Rb36-X; I>3σ(I). In both structures, Ca2+ and Rb+ ions are located at six different crystallographic sites. In dehydrated Ca31Rb30-X, sixteen Ca2+ ions fill site I, at the centers of the double 6-rings (Ca-O=2.43(1) Å and O-Ca-O=93.3(3)°). Another fifteen Ca2+ ions occupy site II (Ca-O=2.29(1) Å, O-Ca-O=119.5(5)°) and fifteen Rb+ ions occupy site II opposite single six-rings in the supercage; each is 1.60 Å from the plane of three oxygens (Rb-O=2.77(1) Å and O-Rb-O=91.1(4)°). About two Rb+ ions are found at site II', 1.99 Å into sodalite cavity from their three-oxygen plane (Rb-O=2.99(1) Å and O-Rb-O=82.8(4)°). The remaining thirteen Rb+ ions are statistically distributed over site III, a 48-fold equipoint in the supercages on twofold axes (Rb-O=3.05(1) Å and Rb-O=3.38(1) Å). In dehydrated Ca28Rb36-X, sixteen Ca2+ ions fill site I (Ca-O=2.41(1) Å and O-Ca-O=93.6(3)°) and twelve Ca2+ ions occupy site II (Ca-O=2.31(1) Å, O-Ca-O=119.7(4)°). Sixteen Rb+ ions occupy site II; each is 1.60 Å from the plane of three oxygens (Rb-O=2.81(1) Å and O-Rb-O=90.6(3)°) and four Rb+ ions occupy site II'; each is 1.88 Å into sodalite cavity from their three-oxygen plane (Rb-O=2.99(1) Å and O-Rb-O=83.8(2)°). The remaining sixteen Rb+ ions are found at III site in the supercage (Rb-O=2.97(1) Å and Rb-O=3.39(1) Å). It appears that Ca2+ ions prefer sites I and II in that order, and that Rb+ ions occupy the remaining sites. Rb+ ions are too large to be stable at site I, when they are competing with other smaller cations like Ca2+ ions.

• Korean Journal of Materials Research
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• v.6 no.9
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• pp.937-942
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• 1996

박막 공정 및 마이크로머시닝(micromachining)기술에 의해 제작되는 마이크로 가스 센서는 고온 동작이 필수불가결하며 이 때 안정된 출력을 얻기 위해서 센서 저항 변화에 영향을 줄 수 있는 응집화 현상이 발생하지 말아야 한다. 본 연구에서는 고온 동작시 응집화의 구동력으로 작용하는 여러 요소중의 하나인 응력(stress)을 줄이기 위해서 인가 전력 밀도, 기판온도, 증착 압력 등을 증착 변수로 하여 증착 조건이 (AI, SI)1-xOx박막과 Pt 박막의 제반 물성 및 응력변화에 미치는 영향에 대하여 연구하였다. (AI, SI)1-xOx박막의 증착 속도와 굴절율 값은 O2분압과 기판 온도가 증가할수록 감소하였으며 응력은 O2분압이 증가함에 따라 인장에서 압축으로 전환된 후 증가하였다. Pt 박막의 경우, 인가 전력이 증가할수록 공정 압력이 감소할수록, 기판 온도가 감소할수록 증착 속도는 증가하였으며 전기 비저항은 감소하였다. Pt 박막의 응력은 인가 전력이 증가할수록, 공정 압력이 증가할수록, 기판 온도가 증가할수록 압축에서 인장의 방향으로 전환된 후 증가하였으며 박막의 전기비저항 및 증착속도에 크게 의존하는 것으로 분석되었다.

• Korean Journal of Crystallography
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• v.13 no.2
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• pp.63-68
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• 2002

Zn/sub 2-x/Mn/sub x/SiO/sub 4/ phosphors for PDP were synthesized by solid state reaction method. The effects of firing temperature, ratio of hydrogen gas to nitrogen for heat treatment and concentration of activator and co-dopants on the luminous properties have been investigated. It was found that the phosphor fabricated at 1400℃ with x = 0.002 Mn concentration had a maximum brightness. Luminous properties of a phosphor were improved when Cr/sup 3＋/ was added as a co-dopant rather than other co-dopants.

• Journal of Surface Science and Engineering
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• v.27 no.4
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• pp.193-206
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• 1994

A wear behavior of electroless (Ni-P-X, X: SiC, $Al_2O_3$, Diamond) composite coating layers, formed under various conditions on commerical grade low carbon steel, has been investigated using Taber abrasion tester and scanning electron microscope. Several factors, which are type of particles, co-deposited content, particle size, distribution of particles and heat-treatment, influenced the wear resistance. The wear resistance of the composited coating layers after heat-treatment at $400^{\circ}C$ for 1 hr was increased 70 times with diamond, 15 times with SiC and 8 times with $Al_2O_3$, compared with the electroless nickel plating layer without heat-treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.134-137
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• 2004

새로운 리튬 2차전지용 양극활물질인 Li[NiMnCo]O2를 간단히 합성할 수 있는 방법과 Si의 doping에 의해 그 특성을 향상하였다. 원하는 당량비의 Li, Ni, Co, Mn의 nitrate를 고순도의 에탄올에 용해하고 여기에 Si의 원료물질로서 poly(methyl phenyl siloxane)을 원하는 양(전체 전이금속 이온의 $2{\sim}10\;mol%$)만큼 첨가한 후 약 30분 정도 교반하였다. 이 용액을 약 $70{\sim}80^{\circ}C$ 정도의 온도에서 고점도의 진흙 상태가 될 정도로 가열하고 $450{\sim}500^{\circ}C$의 온도에서 약 5시간 정도 열처리 하여 유기물이 없는 상태의 전구체를 제조하였다. 이 전구체를 분말형태로 분쇄하고 $600{\sim}650^{\circ}C$ 정도의 온도에서 3시간, $900{\sim}950^{\circ}C$ 정도의 온도에서 5시간 연속적으로 열처리 하여 최종 활물질을 제조하였다. 이렇게 제조된 활물질은 175mAh/g 정도의 높은 비용량을 나타내었으며 4.5V 충전 조건에도 우수한 수명특성을 나타내었다. Si이 doping되지 않은 활물질에 비해 Si이 doping된 물질은 율특성, 수명특성에서 보다 우수한 특성을 나타내었는데 이것은 층상구조 활물질의 격자상수 증가와 impedance 증가 억제에 기인한 것으로 분석되었다.