• 제목/요약/키워드: $SiO_{x}$

검색결과 1,990건 처리시간 0.029초

Synthesis and Crystal Structure of Ag4Br4 Nanoclusters in the Sodalite Cavities of Fully K+-Exchanged Zeolite A (LTA)

  • Lim, Woo-Taik;Choi, Sik-Young;Kim, Bok-Jo;Kim, Chang-Min;Lee, In-Su;Kim, Seok-Han;Heo, Nam-Ho
    • Bulletin of the Korean Chemical Society
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    • 제26권7호
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    • pp.1090-1096
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    • 2005
  • $Ag_4Br_4$ nanoclusters have been synthesized in about 75% of the sodalite cavities of fully $K^+$-exchanged zeolite A (LTA). An additional KBr molecule is retained in each large cavity as part of a near square-planar $K_4Br^{3+}$ cation. A single crystal of $Ag_{12}$-A, prepared by the dynamic ion-exchange of $Na_{12}$-A with aqueous 0.05 M $AgNO_3$ and washed with $CH_3OH$, was placed in a stream of flowing 0.05 M KBr in $CH_3OH$ for two days. The crystal structure of the product ($K_9(K_4Br)Si_{12}Al_{12}O_{48}{\cdot}0.75Ag_4Br_4$, a = 12.186(1) $\AA$) was determined at 294 K by single-crystal X-ray diffraction in the space group Pm m. It was refined with all measured reflections to the final error index $R_1$ = 0.080 for the 99 reflections for which $F_o\;{\gt}\;4_{\sigma}\;(F_o)$. The thirteen $K^+$ ions per unit cell are found at three crystallographically distinct positions: eight $K^+$ ions in the large cavity fill the six-ring site, three $K^+$ ions fill the eight-rings, and two $K^+$ ions are opposite four-rings in the large cavity. One bromide ion per unit cell lies opposite a four-ring in the large cavity, held there by two eight-ring and two six-ring $K^+$ ions ($K_4Br^{3+}$). Three $Ag^+$ and three $Br^-$ions per unit cell are found on 3-fold axes in the sodalite unit, indicating the formation of nano-sized $Ag_4Br_4$ clusters (interpenetrating tetrahedra; symmetry $T_d$; diameter ca. 7.9 $\AA$) in 75% of the sodalite units. Each cluster (Ag-Br = 2.93(3) $\AA$) is held in place by the coordination of its four $Ag^+$ ions to the zeolite framework (each $Ag^+$ cation is 2.52(3) $\AA$ from three six-ring oxygens) and by the coordination of its four $Br^-$ ions to $K^+$ ions through six-rings (Br-K = 3.00(4) $\AA$).

Role of stearyl-coenzyme A desaturase 1 in mediating the effects of palmitic acid on endoplasmic reticulum stress, inflammation, and apoptosis in goose primary hepatocytes

  • Tang, Bincheng;Qiu, Jiamin;Hu, Shenqiang;Li, Liang;Wang, Jiwen
    • Animal Bioscience
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    • 제34권7호
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    • pp.1210-1220
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    • 2021
  • Objective: Unlike mammals, goose fatty liver shows a strong tolerance to fatty acids without obvious injury. Stearyl-coenzyme A desaturase 1 (SCD1) serves crucial role in desaturation of saturated fatty acids (SAFs), but its role in the SAFs tolerance of goose hepatocytes has not been reported. This study was conducted to explore the role of SCD1 in regulating palmitic acid (PA) tolerance of goose primary hepatocytes. Methods: 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide was examined to reflect the effect of PA on hepatocytes viability, and quantitative polymerase chain reaction was used to detect the mRNA levels of several genes related to endoplasmic reticulum (ER) stress, inflammation, and apoptosis, and the role of SCD1 in PA tolerance of goose hepatocytes was explored using RNA interfere. Results: Our results indicated that goose hepatocytes exhibited a higher tolerant capacity to PA than human hepatic cell line (LO2 cells). In goose primary hepatocytes, the mRNA levels of fatty acid desaturation-related genes (SCD1 and fatty acid desaturase 2) and fatty acid elongate enzyme-related gene (elongase of very long chain fatty acids 6) were significantly upregulated with 0.6 mM PA treatment. However, in LO2 cells, expression of ER stress-related genes (x box-binding protein, binding immunoglobulin protein, and activating transcription factor 6), inflammatory response-related genes (interleukin-6 [IL-6], interleukin-1β [IL-1β], and interferon-γ) and apoptosis-related genes (bcl-2-associated X protein, b-cell lymphoma 2, Caspase-3, and Caspase-9) was significantly enhanced with 0.6 mM PA treatment. Additionally, small interfering RNA (siRNA) mediated downregulation of SCD1 significantly reduced the PA tolerance of goose primary hepatocytes under the treatment of 0.6 mM PA; meanwhile, the mRNA levels of inflammatory-related genes (IL-6 and IL-1β) and several key genes involved in the phosphoinositide 3-kinase (PI3K)/protein kinase B (AKT), forkhead box O1 (FoxO1), mammalian target of rapamycin and AMPK pathways (AKT1, AKT2, FoxO1, and sirtuin 1), as well as the protein expression of cytochrome C and the apoptosis rate were upregulated. Conclusion: In conclusion, our data suggested that SCD1 was involved in enhancing the PA tolerance of goose primary hepatocytes by regulating inflammation- and apoptosis-related genes expression.

합금철제조공정에서 발생되는 분진의 물성 (A Study on the Rroperties of the Dusts from Ferroally Manufacture)

  • 신강호;송영준;현종영;조영근;서순일;박찬훈;조동성
    • 자원리싸이클링
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    • 제8권3호
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    • pp.9-17
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    • 1999
  • 합금철 제조공정의 분진에서 재활용하기 위한 자료를 얻을 목적으로 분진의 압도와 형상 그리고 자성에 따른 조성을 조사하였다. 고탄소폐로망간과 실리콩망간의 제조공정에서 발생되는 분진의 메디안경은$6.0\mu\textrm{m}$이고, Ca함량이 25.4% Mn함량은 13.5%이며, Mn 성분은 주로 합금철의 산화물로 존재하기 때문에 입도분급이나 자력선별로는 망간의 품위나 실수율을 높이기 어려울 것으로 판단된다. 그러나 중 저탄소페로망간 제조공정의 분진 중에서 Bag Filter에 포집되는 분진은 $0.2~2\mu\textrm{m}$의구형이고, Mn 함량이 63.1%이며, 주로 $Mn_3O_4$로 존재하기 때문에 망간을 재활용하기 위한 좋은 원료가 될 수 있다. 또한 Cooler에 포집되는 부진의 메디안경은 $5.8mu\textrm{m}$이고, $13\mu\textrm{m}$를 기준으로 크게 2게 입단으로 나누어지며, 미립자의 입단에 $Mn_3O_4$의 구형입자가, 조립자의 입단에는 $Mn_{x}Fe_{y}O_{z}$의 속이 빈 구형입자와 ) $Ca(OH_2)$의 입자들이 농집되는 경향이 크므로 입도분급이나 자력선별로 Mn의 품위를 높일 수 는 있으나 실수율이 46%에 지나지 않았다.

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The Optimization of Indium Zinc Oxide Thin Film Process in Color Filter on Array structure

  • Lee, Je-Hun;Kim, Jin-Suek;Jeong, Chang-Oh;Kim, Shi-Yul;Lim, Soon-Kwon;Souk, Jun-Hyung
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1244-1247
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    • 2004
  • For obtaining the best panel quality of color filter on array(COA) architecture in TFF LCD, we investigated the influence of deposition temperature, $O_2$ flow, thickness on the optical transmittance, wet etching and adhesion properties of IZO deposited onto each color photo resist(red, green, blue). Average transmittance of the pixel single layer in the visible range(between 380 and 780nm) was mainly affected by thickness and showed maximum at 1250 ${\AA}$ while the thickness showing peak transparency in each R, G, B wavelength was different. The relation was calculated by using bi-layer transmission and reflectance model, which corresponded to experimental data very well. The adhesion of IZO deposited on each color PR was found to have enhanced value except red PR case, compared to that of IZO which was deposited on $SiN_x$. Wet etching pattern linearity was decreased as the thickness increased. The thickness of IZO was one of vital factors in order to optimize overall pixel process for fabricating COA structure.

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$Cl_2/Ar$ 유도 결합 플라즈마에 의한 gold 박막의 식각특성 (Etching characteristics of gold thin films using inductively coupled $Cl_2/Ar$ plasma)

  • 장윤성;김동표;김창일;장의구;이수재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.7-11
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    • 2002
  • In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

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Analysis of Coplaner $LiNBO_3$ Waveguide Structures Applicable Electrooptic Modulator with FDTD method

  • Lee, Byung-Je;Byun, Joon-Ho;Kim, Nam-Young;Kim, Jong-Heon;Lee, Jong-Chul
    • 한국전자파학회논문지
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    • 제11권7호
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    • pp.1211-1217
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    • 2000
  • The three-dimensional finite-difference time-domain (FDTD) method and the two-dimensional quasi-static formulation have been used to calculate the characteristic impedance and the microwave effective index of coplanar waveguide structures on Lithium Niobate ($LiNBO_3$) single crystal substrates with a yttria-stabilized zirconia (YSZ) or $SiO_2$ buffer layer. The results shown can be a good source to predict the modulator characteristics. The effects of the thin buffer layer and anisotropy of the $LiNBO_3$ crystal (x-cut and z-cut) are discussed. The comparison between the FDTD and quasi-static results shows good agreement. In this paper, the efficient modeling technique of the FDTD method for the coplanar waveguide (CPW) structures based on an anisotropic substrate with a thin buffer layer is developed.

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Use of Stone Powder Sludge in Fly Ash-Based Geopolymer

  • Choi, Se-Jin
    • Architectural research
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    • 제12권1호
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    • pp.49-55
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    • 2010
  • Stone powder sludge is a by-product of the manufacturing process of crushed sand. Most of it is dumped with soil in landfills, and the disposal of stone powder sludge causes a major environmental problem. This paper investigates the applicability of stone powder sludge in fly ashbased geopolymer. For this, stone powder sludge was used to replace fly ash at a replacement ratio of 50% and 100% by weight. The compressive strength of the samples was measured and scanning electron microscopy/ energy dispersive spectroscopy (SEM/EDS) analysis and X-ray diffraction (XRD) were performed. The test results indicated that the optimum level of the alkali activator ratio ($Na_2SiO_3$/NaOH) for fly ash-based geopolymer using stone powder sludge was 1.5. The strength development is closely related to the NaOH solution concentration. In addition, the compressive strength of the sample cured at $25^{\circ}C$ was significantly improved between 7 days and 28 days, even though the strength of the sample showed the lowest value at 7 days. Microscopy results indicated that a higher proportion of unreacted fly ash spheres remained in the sample with 5M NaOH, and some pores on the surface of the sample were observed.

Efficient Measurement System to Investigate Micro-Doppler Signature of Ballistic Missile

  • Choi, In-O;Kim, Kyung-Tae;Jung, Joo-Ho;Kim, Si-Ho;Park, Sang-Hong
    • International Journal of Aeronautical and Space Sciences
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    • 제17권4호
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    • pp.614-621
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    • 2016
  • Micro-Doppler (MD) shift caused by the micro-motion of a ballistic missile (BM) can be very useful to identify it. In this paper, the MD signatures of three scale-model BMs are investigated using a portable measurement system. The measurement system consists of an X-band 2-by-2 phase comparison mono-pulse radar, and a mechanical device that can impart controlled spinning and coning motions simultaneously to a model to yield the MD signature that replicates the characteristic of each target and the corresponding micro-motion. The coning motion determined the overall period of MD, and the spinning motion increased its amplitude. MD was also dependent on aspect angle. The designed system is portable, and can implement many micro-motions; it will contribute to analysis of MD in various situations.

실리콘 고무의 하전입자의 거동에 관한 연구 (A Study on the Behavior of Charged Particles of Silicone Rubbers)

  • 이성일
    • Elastomers and Composites
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    • 제31권5호
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    • pp.335-340
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    • 1996
  • In order to look into the internal structure and the properties in the silicone rubbers added reinforcing fillers; silica $additives(O{\sim}140phr)$, and to examine the behavior of charged particles, the properties of thermally stimulated current(TSC) and X-Ray diffraction are investigated, respectively. And then, from the TSC which are formed by applying the electric field of $2{\sim}5kV/mm$ to specimen at the temperature range from -150 to $260^{\circ}C$, the results are as follwing: In the case of non-filled specimen, four peaks of ${\delta},\;{\gamma},\;{\beta}\;and\;{\alpha}$ are obtained at the temperature of $-120^{\circ}C,\;-60^{\circ}C,\;20^{\circ}C\;and\;130^{\circ}C$, respectively and the case of filled specimen, three peaks of ${\delta},\;{\alpha}_2\;and\;{\alpha}_1$ are observed at the temperature of $-120^{\circ}C,\;80^{\circ}C\;and\;130^{\circ}C$, respectively. The origins of these peaks are that, the ${\delta}$ peak seems to the result from the contribution of side chain methyl radical, and the ${\gamma}$ peak from the depolarization of space charge polarization owing to be added impurity during manufacturing specimens, and the ${\beta}$ peak from the orientation of $Si-CH_3$ dipole, and the ${\alpha}_2$ near the temperature of $80^{\circ}C$ from hydroxyl in carboxylic radical, and finally, the ${\alpha}_1$ peak near the temperature of $130^{\circ}C$ from carboxyl acid that is formed by the thermal oxidation of high temperature.

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Organic Thin-Film Transistors based on Alkoxynaphthalene End-capped Divinylbenzene

  • Kim, Yun-Hi;Lee, Dong-Hee;Park, Sung-Jin;Chen, June;Yi, Mi-Hye;Kwon, Soon-Ki
    • Journal of Information Display
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    • 제10권3호
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    • pp.125-130
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    • 2009
  • The new organic semiconductor, which is composed of a divinylbenzene core unit and alkoxynaphthalene on both sides, 1,4-bis-2-(6-hexyloxy)naphthalen-2-yl-vinylbenzene, was synthesized via Wittig reaction. The obtained oligomer was characterized via FT-IR, mass and elemental analysis, UV-visible spectroscopy, cyclovoltammetry, differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). The vacuum-evaporated film was characterized via X-ray diffraction and atomicforce microscopy (AFM). It formed a highly ordered polycrystalline vacuum-evaporated film and exhibited a good field-effect performance, with a hole mobility of $0.015cm^2/V{\cdot}s$, an on/off ratio of $1.18{\times}10^5$, and a subthreshold slope of 0.69 V when it was deposited at Ts=$90^{\circ}C$ on HMDS-treated $SiO_2$.