• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.83-85
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• 2008

4성분계 Ti-Si-C-N 코팅막은 $TiCl_4$, $SiH_4$, $CH_4$, Ar, 그리고 $N_2$ 가스 혼합체를 이용하여 RF-PECVD 기법에 의해 Si 와 AISI 304 기판위에 합성하였다. Ti-C-(0.6)-N(0.4) 조성의 코팅막에 Si를 첨가함으로 Ti(C,N) 결정질은 줄어들고, Si3N4 및 SiC 비정질상이 나타났다. Ti-Si(9.2 at.%)-C-N의 조성에서 나노 크기의 nc-Ti(C,N) 결정질을 비정질 a-Si3N4/SiC가 둘러싸고 있는 형태의 나노 복합체를 나타내었다. 경도 24 Gpa의 Ti-C-N 코팅막은 Si를 첨가함으로 Ti-Si(9.2 at.%)-C-N 조성에서 46 Gpa의 최고 경도를 나타내었으며, 마찰계수의 경우에도 Ti-C-N 코팅막에 Si를 첨가함으로 크게 낮아졌다.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2006.05a
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• pp.150-155
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• 2006

제강공정에서 발생되는 $CaO-Al_{2}O_{3}-SiO_{2}$계 조성을 갖는 2 차 정련슬래그 (래들 슬래그)를 이용하여 하수슬러지용 고화재개발 및 하수슬러지 고화체의 물성에 관한 연구를 수행하였다. 래들슬래그는 냉각과정에서 분화되는 성질이 있어 냉각후 분말상의 슬래그가 만들어진다. 분말상 슬래그의 주 결정상은 $12CaO{\cdot}7Al_{2}O_{3}$ 및 $2CaO{\cdot}SiO_{2}$로 구성되어 있다. $12CaO{\cdot}7Al_{2}O_{3}$ 상은 속경성 시멘트의 특징이 있다. 또한 $CaSO_{4}$와 혼합사용시 ettringite 상을 형성시켜 하수슬러지의 함수율 저감효과 및 강도발현 효과가 우수한 결과를 얻었다. $Cl^{-}$ 이온의 고정화면에서는 고화재중 래들슬래그의 혼합비가 높을수록 고화체 구조내에 $Cl^{-}$ 이온이 고정화되어 용출량은 감소하였다. 고화재로서 제강부산물을 사용하기 때문에 경제성이 있으며, $Cl^{-}$ 이온 함량이 높은 하수슬러지 고화재로서의 재활용이 기대된다.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.392-398
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• 2020

Producing solar grade silicon using an inexpensive method is a key factor in lowering silicon solar cell costs; the direct electrochemical reduction of SiO₂ in molten salt is one of the more promising candidates for manufacturing this silicon. In this study, SiO₂ granules were electrochemically reduced in molten CaCl₂ (850℃) using Ag-Si eutectic droplets that catalyze electrochemical reduction and purify the Si product. When Ag is used as the working electrode, the Ag-Si eutectic mixture is formed naturally during SiO₂ reduction. However, since the Ag-Si eutectic droplets are liquid at 850℃, they are easily lost during the reduction process. To minimize the loss of liquid Ag-Si eutectic droplets, a cylindrical graphite container working electrode was introduced and Ag was added separately to the working electrode along with the SiO₂ granules. The graphite container working electrode successfully prevented the loss of the Ag-Si eutectic droplets during reduction. As a result, the Ag-Si eutectic droplets acted as stable catalysts for the electrochemical reduction of SiO₂, thereby producing one-dimensional Si rods through a mechanism similar to that of vapor-liquid-solid growth.

• Bulletin of the Korean Chemical Society
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• v.8 no.4
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• pp.242-246
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• 1987

The hydrogen abstraction reactions of $SiH_4, SiH_2Cl_2 \;and\; SiHCl_3$ by ground state chlorine atoms generated photochemically from chlorine molecules have been studied at temperatures between 15 and $100^{\circ}C.$ The absolute rates for the reactions have been obtained by a competition technique using ethane as a competitor. The rate expressions ($in cm^3/mol/s$) are found to conform to an Arrhenius rate law: $k_{SiH_4} = (7.98 {\pm} 0.42) {\times} 10^{13}$ exp $[-(1250 {\pm}20)/T].$ $k_{SiH_2Cl_2} = (2.25 {\pm} 0.12) {\times} 10^{15}$ exp[-(1010 ${\pm}$ 10)/T]. $k_{SiHCl_3} = (9.04 {\pm} 0.28) {\times} 10^{14}\; exp[-(1200 {\pm} 10)/T].$ The activation energies obtained from this study represent the same trend as with the carbon analogues, while this trend was not found with respect to the bond dissociation energies among silicon compound homologues. These anomalous behaviors were interpreted in terms of electronic effects and of the structural differences between these compounds.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.62 no.4
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• pp.293-303
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• 2017

To elucidate the physiological responses of rice plants to the essential mineral silicon (Si), we assessed the effects of treatments with Si, nitrogen ($NH_4NO_3$; ammonium nitrate), and calcium ($CaCl_2$; calcium chloride), independently or in combination on mineral uptake rates and levels of the hormones abscisic acid (ABA), gibberellin ($GA_1$) and jasmonic acid (JA). We found that nitrogen and calcium uptake was inhibited by Si application. However, solo application of nitrogen or calcium did not affect Si uptake. Compared to the untreated plants, the application of Si, $NH_4NO_3$ or $CaCl_2$ increased the endogenous hormone levels in treated plants. In particular, the concentrations of $GA_1$ and JA increased significantly after the application of Si or $NH_4NO_3$. The level of $GA_1$ observed after a treatment (solo or combine) with Si, and $NH_4NO_3$ was higher than that of the control. By contrast, independent application of $CaCl_2$ or a combined treatment with Si and $CaCl_2$ did not alter $GA_1$ levels. The highest level of $GA_1$ was present in plants given a combination treatment of Si and $NH_4NO_3$. This effect was observed at all time points (6 h, 12 h and 24 h). Endogenous JA contents were higher in all treatments than the control. In particular, a combination treatment with Si and $NH_4NO_3$ significantly increased the JA levels in plants compared to other treatments at all time points. A small increase in JA levels was observed after 6 h in plants given the $CaCl_2$ treatment. However, JA levels did not differ between plants given a $CaCl_2$ treatment and controls after 12 h or 24 h of exposure. We conclude that treatment with $CaCl_2$ alone does not affect endogenous JA levels in the short term. Endogenous ABA contents did not show any differences among the various treatments.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.489-497
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• 1995

The DDS((CH3)2SiCl2)＋H2 gas mixture, where C atoms exist in excess in the molecules, was used for chemical vapor deposition of SiC in order to prevent codeposition of free Si in MTS(Ch3SiCl3)＋H2 system. The deposition rate was more rapid than MTS, however differ from that of MTS, it decreased after shwoing a maximum at 140$0^{\circ}C$. The stoichiometry was highly improved by using the DDS as a precursor, although there exist a little pyrolytic C at 150$0^{\circ}C$. The preferred orientation was (220) in MTS, however, it changed to (111) in DDS. The microstructure of the layer deposited at lower temperature were dense, however it grew coarse with the increase in the temperature.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.213-217
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• 2006

In this study, atomic layer etching of Si has been carried out using $Cl_2$ adsorption followed by the irradiation Ar neutral beam of low energy. In this experiment, the etch rate of Si was dependent on the $Cl_2$ pressure(the surface coverage of chlorine) and the irradiation time of Ar neutral beam(the flux density of Ar neural beam). And the etch rate of Si(100) and Si(111) were saturated exactly at one monolayer per cycle with $1.36{\AA}/cycle\;and\;1.57{\AA}/cycle$, respectively.

• Journal of the Korean Chemical Society
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• v.44 no.1
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• pp.60-67
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• 2000

The wavelength of the surface plasmon absorption depends on the dielectric matrix. $TiO_2/SiO_2$ complex oxide films doped with Au nanoclusters were prepared by sol-gel spin-coating method using $Ti(OPr^i)_4$, $Si(OEt)_4$, and $HAuCl_4{\cdot}7H_2O$. The wavelength of the maximum absorption of Au nanoehrsters in the $TiO_2/SiO_2$ thin films was obtained with lineality from 540 nm to 615 nm depending on the molar ratio of $TiO_2$. The particle sizes and structures of these nanoclusters have been identified through a TEM and X-ray diffraction patterns. The dielectric constants of $TiO_2/SiO_2$ thin films were calculated from the experimental results.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.817-823
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• 1990

Pilot-scale experiments on the oxidation of TiCl4 to produce TiO2 were carried out in a verical reactor of 20cm in inside diameter and 140cm in length ; LPG burning was used as a heating means to maintain the reaciton temperature. The effects of reaction temperature and excess oxygen content on the conversion of TiCl4 and on the particle size of produced TiO2 were investigated. The ranges of operating conditions varied were 900 to TiO2 was 0.45-0.57${\mu}{\textrm}{m}$, TiCl4 conversion was 82-96%, the rutile content was 33-57% and the contents of impurities were 0.03% of Fe, 0.03% of SiO2 and 62ppm of Cl. These experimental results were compared with those of other investigators.