• Bulletin of the Korean Chemical Society
• /
• v.22 no.12
• /
• pp.1337-1340
• /
• 2001

The bulk photopolymerization of methyl methacrylate (MMA) with para-substituted phenylsilanes such as F-C6H4SiH3 (1), H3C-C6H4SiH3 (2), and H3CO-C6H4SiH3 (3) was performed to produce poly(MMA)s containing the respective silyl moiety as an end group. For all the hydrosilanes, the polymerization yields and the polymer molecular weights decreased, whereas the TGA residue yields and the relative intensities of Si-H IR stretching bands increased as the relative silane concentration over MMA increased. The polymerization yields and polymer molecular weights of MMA with 1-3 increased in the order of 3 < 1 < 2. These hydrosilanes influence significantly upon the photopolymerization of MMA as both chain-initiation and chain-transfer agents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.387-390
• /
• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.197-200
• /
• 2001

Novel Enhanced Inductively Coupled Plasma is applied to etch $SiO_2$. Effect of $O_2$ or Ar addition to $C_{4}F_{8}$ gas is monitored by Optical Emission Spectroscopy and Quadrupole Mass Spectrometer. It is fund that Ar or $O_2$ dilution to $C_{4}F_{8}$ increases F emission intensity and decreases $CF_2$ intensity. However, the ac frequency to the Helmholtz coil decreases the F intensity and thus increases $CF_2$/F ratio. By adjusting the ac frequency, the optimum etch rate and PR to $SiO_2$ selectivity can be obtained in E-lCP.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.32 no.11
• /
• pp.1003-1009
• /
• 2008

In this study, liquid phase sintered SiC (LPS-SiC) materials were made by hot pressing method. The particle size of nano-SiC powder was 30nm. Alumina ($Al_2O_3$), yttria ($Y_2O_3$) and silica ($SiO_2$) were used for sintering additives. To investigate effects of $SiO_2$, ratios of $SiO_2$ contents were changed by five kinds. Materials have been sintered for 1 hour at $1760^{\circ}C$, $1780^{\circ}C$ and $1800^{\circ}C$ under the pressure of 20MPa. The system of sintering additives which affects a property of sintering as well as the influence depending on compositions of sintering additives were investigated by measurement of density, mechanical properties such as flexural strength, vickers hardness and sliding wear resistance were investigated to make sure of the optimum condition which is about matrix of $SiC_f$/SiC composites. The abrasion test condition apply to load of 20N at 100RPM for 20min. Sintered density, flexural strength of fabricated LPS-SiC increased with increasing the sintering temperature. And in case of LPS-SiC with low $SiO_2$, sliding wear resistance has very excellent. Monolithic SiC $1800^{\circ}C$ sintering temperatures and 3wt% have excellent wear resistance.

• Resources Recycling
• /
• v.18 no.4
• /
• pp.62-69
• /
• 2009

We researched separation of mixed waste acids with HF, $CH_3COOH$, $HNO_3$ that were produced during a semiconductor wafer process to recycle these acids. At first, we manufactured the fluoride compound in form of $Na_2SiF_6$ by precipitating HF using $NaNO_3$ and Si powder. The concentration of HF was reduced from the initial concentration of 127 g/L to 0.5 g/L with an HF recovery ratio of 99.5%. After the manufacture of $Na_2SiF_6$, the concentration of $HNO_3$ and $CH_3COOH$ demonstrated 502 g/L and 117 g/L respectively. Following these findings we added NaOH in this $CH_3COOH/HNO_3$ mixed acid in order to obtain pH=4. Next we separated the $CH_3COOH$ and recoverd it through the use of vaccum evaporation at -440 mmHg, $95^{\circ}C$. The concentration of the recovered $CH_3COOH$ was approximately 15% and the recovery ratio of $CH_3COOH$ was over 85%. We precipitated the $NaNO_3$ by cooling the concentrated solution to $20^{\circ}C$ with a $HNO_3$ recovery ratio of over 93%. We confirmed that only $Na_2SiF_6$ and $NaNO_3$ were manufactured by XRD analysis after drying these precipitants at $90^{\circ}C$. The precipitants demonstrated a purity of approximately 97% and 98% respectively. Therefore, the purity of the precipitants proved to be similar to that of commercial products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1034-1037
• /
• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.05a
• /
• pp.124-124
• /
• 2002

• Proceedings of the Korean Ceranic Society Conference
• /
• 2004.10a
• /
• pp.95.1-95.1
• /
• 2004

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.6
• /
• pp.436-439
• /
• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.5
• /
• pp.1349-1354
• /
• 2010

The geometries and isomerization of the alkylidene silylenoid $H_2C$ = SiLiF as well as its insertion reactions with R-H (R = F, OH, $NH_2$) have been systematically investigated at the B3LYP/6-311+$G^*$ level of theory. The potential barriers of the three insertion reactions are 97.5, 103.3, and 126.1 kJ/mol, respectively. Here, all the mechanisms of the three reactions are identical to each other, i.e., an intermediate has been formed first during the insertion reaction. Then, the intermediate could dissociate into the substituted silylene ($H_2C$ = SiHR) and LiF with a barrier corresponding to their respective dissociation energies. Correspondingly, the reaction energies for the three reactions are -36.4, -24.3, and 3.7 kJ/mol, respectively. Compared with the insertion reaction of $H_2C$ = Si: and R-H (R = F, OH and $NH_2$), the introduction of LiF makes the insertion reaction occur more easily. Furthermore, the effects of halogen (F, Cl, Br) substitution and inorganic salts employed on the reaction activity have also been discussed. As a result, the relative reactivity among the three insertion reactions should be as follows: H-F > H-OH > H-$NH_2$.