• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1471-1474
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• 1998

ZnO Varistor with composition of ZnO, $Bi_2O_3$, $Sb_2O_3$, CoO, NiO, $MnO_2$, $Cr_2O_3$, $Al_2O_3$ was fabricated by sintering methods. The purpose of this paper is to present certified voltage-current test data and a summary of electrical characteristics of the ZnO varistors.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• Progress in Superconductivity and Cryogenics
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• v.10 no.3
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• pp.5-8
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• 2008

On highly-textured IBAD-MgO templates, we have tried to find proper buffer layers among various candidate materials, including $LaMnO_3$ (LMO), $La_2Zr_2O_7$ (LAO), $LaAlO_3$ (LAO), $LaGaO_3$ (LGO), $NdGaO_3$ (NGO), and $BaZrO_3$ (BZO). All buffer layers were deposited on the IBAD-MgO templates by KrF pulsed laser deposition(PLD). LAO layer showed an armorphous phase. LZO, LGO, and NGO layers showed polycrystalline growth. Only LMO and BZO layers exhibited c-axis oriented biaxially textured films. Optimally processed LMO buffer layer at deposition temperature of $750^{\circ}C$ and $PO_2$ of 100mTorr exhibited ${\triangle}{\phi}$ value of ${\sim}-5.2^{\circ}$ and RMS roughness of 5.6nm. Interestingly, BZO buffer layers with ${\triangle}{\phi}$ values of ${\sim}-6^{\circ}$ could be routinely produced over a wide PLD processing condition.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.583-597
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• 1995

We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.

• Transactions of the Korean hydrogen and new energy society
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• v.4 no.2
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• pp.5-15
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• 1993

Hydrogen production in visible light with the following semiconductor systems, $CdS-WO_3$, $CdS-TiO_2$, have been investigated in the presence of redox catalyst (Pt, $RuO_2$). MeOH, EtOH, isopropanol, sulfide/sulfite mixture, lactic acid were used as sacrifical reagents. The optimal condition for $H_2$ evolution was found to be in qgueous lactic acid media for $CdS-WO_3/RuO_2$. The photochemical efficiency for this system was 1.05 % and the $H_2$ evolution rate was 26.5ml/min. at $6.07{\times}10^{-5}$ einstein/sec photon rate

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.111-116
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• 2003

The red emitting phosphors for low voltage cathode luminescent, fine $(Y,Gd)_2O_2$S : Eu powders were synthesized and investigated the effect of $Gd^{3+}$as sensitizer at variety of sintering temperature. The highly intense emission line of $(Y,Gd)_2O_2$S : Eu at 627 nm is attributed in the transition from $^5D_o to ^7F_2$ energy levels. It showed the maximum value at the doping level of 5 mole% of $Gd^{3+}$at $950^{\circ}C$ of sintering temperature and then, it was degraded rapidly. The mean particle size of $(Y,Gd)_2O_2$S : Eu was obtained around 1 fm and the cathode luminescent properties of (Y,Gd)$_2$O$_2$S : Eu were better than those of $(Y,Gd)_2O_2$S : Eu.

• Metals and materials international
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• v.24 no.6
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• pp.1394-1402
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• 2018

This study investigates the mechanism of MnS precipitation on $Al_2O_3-SiO_2$ inclusions during the solidification of non-oriented silicon steel, especially the influence of the phase structures and sizes of the oxides on the MnS precipitation, by scanning electron microscopy and transmission electron microscopy coupled with energy dispersive spectrometry. The investigation results show that MnS tends to nucleate on submicron-sized $Al_2O_3-SiO_2$ inclusions formed by interdendritic segregation and that it covers the oxides completely. In addition, MnS can precipitate on micron-sized oxides and its precipitation behavior is governed by the phase structure of the oxides. The MnS embryo formed in a MnO-containing oxide can act as a substrate for MnS precipitation, thus permitting further growth via diffusion of solute atoms from the matrix. MnS also precipitates in a MnO-free oxide by the heterogeneous nucleation mechanism. Furthermore, MnS is less prone to precipitation in the $Al_2O_3$-rich regions of the $Al_2O_3-SiO_2$ inclusions; this can be explained by the high lattice disregistry between MnS and $Al_2O_3$.

• Journal of the Korean Chemical Society
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• v.40 no.4
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• pp.219-228
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• 1996

An ab initio molecular orbital method has been applied to investigation of molecular properties and equilibrium geometries for hexahydroxybenzene triscarbonate (C9O9) and its analogous cyclic compounds (C9S9, C9O6S3, C9O3S6). In these works, the optimized geometry of each compound has been obtained at HF and MP2 levels. These results have shown that the optimized geometries of these compounds prefer D3h planar structure to C3v bowl structure. Calculations of harmonic vibrational frequencies have been also carried out at HF/3-21G* level to analyze normal modes of these compounds. Bonding characters of these compounds are studied by Mulliken and natural populations obtained at HF/6-31G* level. We have also studied the structures and the populations of C6O6 and C6S6 at HF and MP2 levels which are obtained by pyrolyses of C9O9 and analogous compounds. In addition, the single point calculations have been performed to predict the approximate energy barrier for pyrolysis of each compound.

• Journal of the Korean Chemical Society
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• v.55 no.3
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• pp.405-411
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• 2011

The ab initio calculations for fluoromethyl fluoroperoxides have been carried out using MP2/6-311G(d,p) and B3LYP/6-311++G(d,p) method. The structural optimizations were performed for several isomers and conformers of methyl fluoroperoxide, $CH_3OOF$ and the vibrational frequencies were calculated. The most stable conformer of $CH_3OOF$ is skew form and has fairly short O-O bond distance. The trans and cis conformers have 8-12 kcal/mol higher energies than skew form and the other isomers are very unstable. The structures of $CH_2FOOF$, $CHF_2OOF$ and $CF_3OOF$ are also optimized and vibrational frequencies were calculated. These molecules also have skew forms as the lowest energy conformers. The O-O bond distances are longer and C-O bond distances are shorter than $CH_3OOF$, but the structural parameters are almost independent of the number of fluorine atoms in methyl group.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.13-18
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• 1985

Semiconductive $Ba_{0.9}Sr_{0.1}TiO_3$ was prepared by both the Calcining of mixed Oxides (C. M. O) and the Molten Salt Synthesis(M.S.S) methods to investigate the PTCR effects. In the Molten Salt Synthesis method the temperature of calcination for Synthesis of $BaTiO_3$ could be lowered from 110$0^{\circ}C$ to 80$0^{\circ}C$. The M.S.S Specimens had smaller grain size and more homogeneous size distribution at the same sintering temperature as compared with the C. M. O specimens. The M. S. S. specimens showed greater PTCR effects and current variations in the time vs. current charac-teristics than those of C. M. O Specimens.