• Korean Journal of Materials Research
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• v.19 no.11
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• pp.596-600
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• 2009

Electrochemical deposition characteristics of CdSe nanorods were investigated for hybrid solar cell applications. CdSe nanorods were fabricated by electrochemical method in $CdSO_4$ and $H_2SeO_3$ dissolved aqueous solution using an anodic aluminum oxide (AAO) template. Uniformity of CdSe nanorods was dependent on the diameter and the height of holes in AAO. The current density, current mode, bath composition and temperature were controlled to obtain a 1:1 atomic composition of CdSe. CdSe nanorods deposited by direct-current method showed better uniformity compared to those deposited by purse-current and/or purse-reverse current methods due to the bottom-up filling characteristics. $H_2SeO_3$ concentration showed more significant effects on pH of solution and stoichiometry of deposits compared to that of $CdSO_4$. A 1:1 stoichiometry of uniform CdSe nanorods was obtained from 0.25M $CdSO_4-5$ mM $H_2SeO_3$ electrolytes with a direct current of 10 $mA/cm^2$ at room temperature. X-ray diffraction and electron diffraction pattern investigations demonstrate that CdSe nanorods are a uniform cubic CdSe crystal.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.30-33
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• 2003

YBCO coated conductor, also called the 2nd generation high temperature superconducting wire, consists of oxide multi-layer hetero-epitaxial thin films. Pulsed laser deposition (PLD) is one of many film deposition methods used to make coated conductor, and is the one known to be the best to make superconducting layer so far. As a part of the effort to make long length coated conductor, the optimum deposition condition of YBCO film on single crystal substrate (SrTiO3) was investigated using PLD. Substrate temperature, oxygen partial pressure, and laser fluence were varied to find the best combination to grow high quality YBCO film.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.98-104
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• 1999

In this work, we investigated hydrogen content, bond structure, and electrical properties of a-Si:H films prepared by ECR plasma CVD as a function of pressure. In general, the photo sensitivity of a-Si:H films prepared by CVD method decreases as the deposition rate increases, but the photo sensitivity of a-Si:H films prepared by ECR plasma deposition method increases as the deposition rate increases. In the same condition of microwave power, the ratio of $SiH_4/H_2$, and pressure, though film thickness increases linearly with deposition time and hydrogen content in the film is constant, photo conductivity can be decreased because $SiH_2$ bond is made more than SiH bond in the short reaction time. According to increase pressure in the chamber, SiH bond in the film increase and optical energy gap decrease. So, photo conductivity can be increased. But photo sensitivity decreased as dark conductivity increase. It must be grown in the condition of low pressure and hydrogen gas for taking the a-Si:H film of high quality.

• Journal of the Korea institute for structural maintenance and inspection
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• v.16 no.5
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• pp.78-87
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• 2012

This study is for developing a system for electro-deposition utilizing sea water containing various ions like calcium and magnesium. This is the first step research for the final goal which is a development of anti-corrosive steel for RC structure, so that this paper is mainly focused on the development for electro-deposition system. Optimum conditions for steel coating is obtained through various tests considering anode type, temperature, duration time, and current density. The composition of electro-deposition is analyzed through SEM, EDS, and XRD and it is evaluated to be $CaCO_3$ and $Mg(OH)_2$. Through measuring polarization potential and current density in the coated steel, the coating layer from the developed system is evaluated to have high resistance to steel corrosion. Additional tests and discussions on durability and structural performance in the coated steel from this work will be performed for the second step research.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.13 no.2
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• pp.95-104
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• 2010

The purpose of this study is to analyze the correlation between physical stream characteristics and bed materials in natural rivers. Accordingly, four natural rivers were selected reference streams, they were Nam river, Sumjin River, Naesung River and Han River. Grain size distributions of bed materials were gravels, cobbles and boulders in Han river and Nam river, were sand, gravels, cobbles and boulders in Sumjin river and were sand in Naesung river. Four reference streams were divided into each two reference reaches (straight and bend) by plan and profile characteristics of naturally meandering stream. Therefore various reference reaches were chosen in the aspect of physical stream characteristics and grain size distributions. The results investigated and analyzed are as follows. The streams that grain sizes distributions of river bed materials were coarse were stable because they had variety of bed slope without sediment deposition, and then the riffles frequency and the physical characteristics were various. Also, velocitydepth regime were various in four kinds, and the response parts for water level change were small, so that channel flow status were stable and excellent condition. On the other hand, sand river that grain sizes distributions of river bed materials were fine had not the variety of parameters as velocity-depth regimes, sediment deposition, channel flow status and riffles frequency, so that the physical stream characteristics were not various.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.4
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• pp.775-784
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• 2000

Nitrate dry deposition fluxes were directly measured using knife-leading-edge surrogate surface (KSS) covered with greased strips and a water surface sampler (WSS). The average gaseous flux ($8.3mg/m^2/day$) was much higher than the average particulate one ($3.0mg/m^2/day$). The best fit gas phase mass transfer coefficient (MTC) of $HNO_3$ was obtained by linear regression analysis between measured gaseous flux containing nitrogen compounds and measured ambient $HNO_3$ concentration. The result showed that the MTCs of $HNO_3$ were approximately two times higher than those of $SO_2$. Especially, during the ozone action day, measured gaseous fluxes containing nitrogen compounds were much higher than those ones calculated as the product of measured ambient $HNO_3$ concentration and gas phase MTC of $HNO_3$, which is calculated from MTC of $SO_2$ using Graham's diffusion law. This result indicated that other nitrogen compounds except $HNO_3$ contributed to gaseous flux containing nitrogen compounds into the water surface sampler. The theoretical calculations suggest the contributions of nitrous acid ($HNO_2$) and PAN to the gaseous dry deposition flux of nitrogen containing compounds to the WSS.

• Journal of Surface Science and Engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.739-742
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• 2000

Nanostructured ZnS thin films were grown on the slide glass substrate by the chemical bath deposition using an aqueous so1ution Of ZnSO$_4$and CH$_3$CSNH$_2$at 95$^{\circ}C$. The average grain sizes of the ZnS thin film estimating from the Debye-Scherrer formula are 4.8 nm. The optical transmittance edge of the ZnS thin films (4.0 eV) was shifted to the shelter wavelength compared with that of the bulk ZnS (3.67 eV) due to the quantum size effects. The ZnS thin films showed a strong photoluminescence intensity and a sharp emission band from 410 to 480 nm 3t room temperature. The PWHM of photoluminescence peak was about 40 nm. For the viloet(410 nm) and blue(480 nm) emission of the ZnS thin films, the temperature dependence can be described by an Arrhenius equation with an activation energy of 168 and 157 meV, respectively.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.517-524
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• 1991

The CVD process of BPSG (BoroPhosphoSilicate Glass) and its thin film properties were studied. B2H6, PH3, SiH4 and O2 gases were reacted in a AP (Atmospheric Pressure) CVD system in the temperature range of 300℃ and 460℃. The interaction of B2H6 and PH3 was studied from the deposition rate and dopant incorporation change point of view. The dependency of BPSG step coverage on the temperature was changed with different O2/(B2H6+PH3+SiH4) ratio. Finally, the boundary which distinguishes the stable BPSG's from the ones that react with Di (Deionized) water or cleaning chemicals such as H2SO4, HCl, H2O2, NH4OH etc could be defined.