• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.279-281
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• 1997

The properties of Platinum dry etching were investigated in MICP(Magnetized Inductively Coupled Plasma). The problem with Platinum etching is the redeposition of sputtered Platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned Platinum structure produce feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape.[1] Generally, $Cl_2$ plasma is used for the fence-free etching.[1][2][3] The main object of this study was to investigate a new process technology for the fence-free Pt etching. Platinum was etched with Ar plasma at the cryogenic temperature and with Ar/$SF_6$ plasma at room temperature. In cryogenic etching, the height of fence was reduced to 20% at $-190^{\circ}C$ compared with that of room temp., but the etch profile was not fence-free. In Ar/$SF_6$ Plasma, chemical reaction took part in etching process. The trend of properties of Ar/$SF_6$ Plasma etching is similar to that of $Cl_2$ Plasma etching. Fence-free etching was possible, but PR selectivity was very low. A new gas chemistry for fence-free Platinum etching was proposed in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.383-386
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• 1998

After etching Al-Cu alloy films using SiC1$_4$/Cl$_2$/He/CHF$_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, CHF$_3$ plasma treatment subsequent to the etched has been carried out. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after CHF$_3$ and SF$_{6}$ treatment, and the layer supresses effectively the corrosion on the surface as the CHF$_3$ and SF$_{6}$ treatment pressure increases. The corrosion could be suppressed successfully with CHF$_3$ and SF6 treatment in the pressure of 300mTorr.orr.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.853-856
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• 2005

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.

• The Korean Journal of Food And Nutrition
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• v.17 no.2
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• pp.163-170
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• 2004

Effect of several factors for Preparation of whole egg gel (WEG) on texture and color of WEG were investigated in this study. The factors studied were amount of water addition, heating temperature and time, pH and NaCl. The whole egg gel was prepared by mixing of whole egg and steaming at 100$^{\circ}C$ for 7 min followed by cooling at 22$^{\circ}C$ for 90 min. The results showed that the increase in water addition decreased significantly with viscosity values of whole egg solution (WES) and the addition of more than 50％ water resulted in a significant decrease in the stress at failure (SF) and the hardness of WEG. The color a and b values of WES decreased and the value of WEG also decreased significantly in negative range. The increase in heating temperature decreased the coagulation time and increased in SF while SF decreased. Addition of NaCl up to 1.3％ resulted a significant increase in SF and hardness and a little changes in color of WEG. As the pH of WES changed from 4.0 to 10.0, the viscosity of WES was minimal and SF and hardness were maximal at pH 6.0. The L and b values of WEG were significantly reduced at higher pH values of 8.0.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.109-109
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• 1993

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1734-1737
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• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.37-42
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• 1992

Abstract-The ECR(E1ectron Cyclotron Resonance) plasma etcher was developed for process of manufacturing 16M164' DRAM and applied to poly-Si etching process. The etching rate and selectivity of poly-Si were investigated by changing the process factor of pressure gas and microwave power. The increasing power of microwave will have the trend of increasing the etching rate and selectivity of Oxide, and have suitable value process pressure at 6 mTorr. The increasing value of process gas SFdSF6+ Clz will cause the decrease of etching rate and selectivity, this is because the best process factor is not found.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.35-37
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• 2001

The Al etching was studied employing negative ions generated in the downstream $Cl_2$ plasma. In order to etch the Al film practically on an insulator covered electrode coupled with RF power, reduction of the negative self bias voltage (Vdc) was examined using a magnetic filter which trapped electrons. Addition of $SF_6$ and $H_2$ to a $Cl_2/BCl_3$ mixture reduced significantly Vdc.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1342-1349
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• 1988

The dependence of the etch rates of differently doped poly-Si films on the gas composition, the chamber pressure and the RF power was investigated in detail. The highest anisotropy and the lowest CD loss were achieved at the $SF_6$-rich compositions, i.e., $Cl_2:SF_6$=17:33 (SCCM), in the $POCl_3$-doped poly-Si. The etch rates increased for n-type dopant (phosphorus), while decreased for p-type (boron) with increasing the doping levels irrespective of plasma parameters. And from the results of the activation of doped poly-Si films the active carrier concentrations as well as the doping concentrations were found to be responsible for the increase of the etch rate of the phosphorus-doped poly-Si.

• Korean Chemical Engineering Research
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• v.57 no.3
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• pp.378-386
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• 2019

In the present paper we report the calculation results of operation energy consumption for dissolved ions concentration technologies using vacuum evaporation (VE) and hydrate formation. Calculations were conducted assuming the tenfold concentration of saline water (0.35 wt% NaCl solution) of 1 mol/s at room temperature and atmospheric pressure employing vacuum evaporation at $69^{\circ}C$ and 30 kPa and hydrate-based concentration using $CH_4$, $CO_2$ and $SF_6$ as guest molecules. Operation energy consumption of VE-based concentration resulted in 47 kJ/mol, whereas those of hydrate-based concentration were 43, 32, and 28 kJ/mol for $CH_4$, $CO_2$ and $SF_6$ hydrates, respectively. We observe that hydrate-based concentration can a competitive option for dissolved ions recovery from energy consumption standpoint. However, the selection of guest gas is very critical, since it accordingly determines the hydration number, the hydrate formation energy, gas compression energy, etc. The selection of guest gas, separation of concentrated brine and water phases, and the enhancement of hydrate formation rate are the key factors for the commercialization of hydrated-based technology for concentrating dissolved ions.